Infineon Technologies S27KL0642GABHB023

Overview

S27KL0642GABHB023 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput in a 24-ball FBGA package for industrial temperature range (–40°C to +85°C). It integrates on-die refresh control, eliminating host-managed refresh, and uses RWDS for read/write strobe/mask timing with configurable burst lengths (16–128 bytes).

For engineers reviewing the S27KL0642GABHB023 datasheet, S27KL0642GABHB023 pinout, S27KL0642GABHB023 application, or S27KL0642GABHB023 equivalent, key selection criteria include HYPERBUS™ compatibility, self-refresh capability, DCARS support, hybrid sleep/deep power-down modes, and industrial-grade thermal performance.

Technical Context

The device implements a DDR HYPERBUS™ interface with 11–12 signal lines (including optional CK#/CK differential clock), using DQ[7:0] for multiplexed command/address/data and RWDS as a bidirectional strobe/mask signal synchronized to CK. Internal logic manages partial/full array refresh autonomously during idle cycles.

It supports linear and wrapped burst modes (16/32/64/128-byte), hybrid burst (wrapped + linear), configurable output drive strength, and DCARS-where RWDS is phase-shifted by one clock edge to center-align transitions within the read data eye for improved timing margin at high speed.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHB020, the S27KL0642GABHB023 offers identical functionality at lower thermal grade but reduced cost; versus IS66WV12816EBLL-150B3LI, it delivers 2.6× higher bandwidth in <50% pin count and enables dynamic power scaling unattainable with async SRAM.

Availability

S27KL0642GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI sensor gateways requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.

Supply support for S27KL0642GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/PSRAM in bandwidth-constrained, space-limited embedded systems where DDR complexity and pin count must be minimized without sacrificing throughput.

FAQ

Does S27KL0642GABHB023 require external refresh control from the host processor?

No. The device contains an integrated self-refresh controller that autonomously manages DRAM array refresh during idle cycles. The host only issues standard HYPERBUS™ read/write commands; no refresh timing or scheduling is required. This behavior makes it functionally equivalent to static RAM from the host's perspective, simplifying firmware design and reducing CPU load.

What is the purpose of the RWDS signal in read versus write operations?

In read operations, RWDS is driven by the S27KL0642GABHB023 to indicate initial access latency and serve as a read data strobe aligned with DQ transitions. In write operations, RWDS is driven by the host as a byte mask signal - each bit controls whether the corresponding DQ byte is written, enabling partial-word updates without read-modify-write cycles.

Can S27KL0642GABHB023 operate with both 1.8 V and 3.0 V supplies simultaneously?

No. VCC and VCCQ must be supplied at the same nominal voltage: either 1.8 V ±0.15 V or 3.0 V ±0.3 V. Mixing voltages violates absolute maximum ratings and may cause functional failure or accelerated wear. The device does not support split-rail operation; both rails must track within specification during power-up and steady-state.

Is DCARS supported on all S27KL0642GABHB023 units, or is it option-dependent?

Yes, DCARS (DDR Center-Aligned Read Strobe) is a standard feature enabled by default in all S27KL0642GABHB023 units. It is implemented in silicon and requires no external configuration - the RWDS signal is automatically phase-shifted by one CK edge during read transactions to center its transition in the data eye, improving timing margin at 200 MHz operation.