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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S27KL0642GABHI020

Name: S27KL0642GABHI020
Brand: Infineon Technologies
SKU: S27KL0642GABHI020
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S27KL0642GABHI020

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 24-VBGA

Datasheet:: S27KL0642GABHI020.pdf

Description:: IC PSRAM 64MBIT HYPERBUS 24FBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

S27KL0642GABHI020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It features bidirectional RWDS for read/write strobe/mask, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial temperature range (–40°C to +85°C) in 24-ball FBGA.

For engineers reviewing the S27KL0642GABHI020 datasheet, S27KL0642GABHI020 pinout, S27KL0642GABHI020 application, or S27KL0642GABHI020 equivalent, this device serves as a high-bandwidth, low-pin-count memory solution for microcontroller-based systems requiring seamless PSRAM replacement without host-managed refresh.

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh during idle cycles, eliminating host intervention while maintaining static RAM-like interface behavior. Its HYPERBUS™ interface uses only 11–12 signals (including optional CK#/CK), with command/address/data multiplexed over DQ[7:0] and RWDS providing timing-critical strobe/mask functionality.

The device supports linear and wrapped burst modes, DCARS-enabled center-aligned read strobe for improved data eye margin, and multiple power states - including Hybrid Sleep and Deep Power-Down - with standby current as low as 330 µA at 2.0 V and 105°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	64 Mbit (8 MByte) pseudo-static DRAM with self-refresh capability
Interface Standard	HYPERRAM™/HYPERBUS™ DDR interface with 8-bit DQ bus and RWDS strobe/mask
Max Clock Rate	200 MHz DDR - enables 400 MBps peak bandwidth with dual-edge data transfer
Burst Lengths	Configurable: 16/32/64/128 bytes (8/16/32/64 clocks) - supports flexible memory access granularity
Supply Voltage	1.8 V or 3.0 V VCC/VCCQ - dual-voltage support simplifies integration across mixed-supply SoCs
Operating Temp	Industrial grade: –40°C to +85°C - qualified for embedded control and industrial HMI applications
Package	24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) - compact footprint for space-constrained PCB layouts

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-271AC mechanical outline. Pin assignments conform to Infineon's HYPERBUS™ layout for signal integrity and routing efficiency.

Pin/Terminal	Circuit Role	Design Meaning
CS#	Chip Select	Active-low enable for command/address/data transactions; controls device activation and power state entry
CK / CK#	Clock Input	Differential clock pair (optional); defines timing reference for DDR sampling of CA and DQ signals
RWDS	Read/Write Data Strobe	Bidirectional: output during reads (latency indicator & read strobe), input during writes (byte mask)
DQ[7:0]	Data Bus	8-bit multiplexed bus for command, address, and read/write data - reduces pin count vs parallel NOR/SDRAM
RESET#	Hardware Reset	Asynchronous active-low reset that clears internal registers and forces device into known initialization state
VCC / VCCQ	Power Supplies	Separate 1.8 V or 3.0 V supplies for core array (VCC) and I/O buffers (VCCQ) - enables voltage domain isolation

Key Features

Feature	Design Value
Self-refresh DRAM architecture	Eliminates external refresh controller and timing overhead - appears as SRAM to host MCU
HYPERBUS™ low-pin-count interface	11–12 signal interface replaces 30+ pin parallel memories - reduces PCB layer count and routing complexity
DCARS-enabled read strobe	Phase-shifted RWDS aligns transition edge within read data eye - improves timing margin at 200 MHz DDR
Configurable power modes	Hybrid Sleep (330 µA) and Deep Power-Down (12 µA) - extends battery life in portable and IoT edge devices
Partial array refresh	Supports 1/8, 1/4, 1/2 refresh segments - lowers average current during light traffic vs full-array refresh

Applications

Automotive Instrument Clusters

Industrial HMI Panels

Use Scenario: Real-time rendering of vector graphics and animated UI elements in digital dashboards.

IC Role / Device Role / Timing Role: PSRAM buffer for GPU frame buffers and firmware overlay storage, interfaced directly to ARM Cortex-M7 MCU via HYPERBUS™.

Use Value: 400 MBps bandwidth sustains 60 Hz 1280×720 display updates; 24-ball FBGA eases routing beneath SoC in tight automotive PCB layouts.

Use Scenario: Local caching of configuration data, alarm logs, and real-time process variables in PLC-connected HMIs.

IC Role / Device Role / Timing Role: Nonvolatile-adjacent fast memory for deterministic response to touch inputs and serial protocol polling.

Use Value: Self-refresh eliminates background refresh interrupts; industrial temp rating ensures reliability in uncooled cabinet environments.

Edge AI Sensor Gateways

Medical Portable Monitors

Use Scenario: Buffering sensor fusion outputs (IMU, environmental, biometric) prior to edge inference model execution.

IC Role / Device Role / Timing Role: High-throughput scratchpad memory for CNN feature maps and intermediate tensors, accessed by RISC-V host.

Use Value: Wrapped burst mode enables efficient 64-byte tensor tile loads; Deep Power-Down (12 µA) extends battery runtime between sensor bursts.

Use Scenario: Storing waveform buffers and calibration coefficients in handheld ECG/SpO₂ monitors with strict power budgets.

IC Role / Device Role / Timing Role: Low-latency memory for real-time analog front-end data streaming and digital signal processing pipelines.

Use Value: 35 ns tACC and linear burst mode ensure sub-millisecond response to trigger events; AEC-Q100 Grade 3 qualification meets medical safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress S27KS0642GABHI020	Same die, identical electrical specs and pinout - rebranded part post-Cypress acquisition by Infineon	No functional difference; legacy design-in continuity for Cypress-originated BOMs	Select when maintaining legacy sourcing or cross-referencing Cypress documentation
ISSI IS66WV12816EBLL-200B1	Parallel SRAM (128K × 16), 200 MHz async, no self-refresh - requires external refresh management	Higher pin count (48-pin TSOP), no HYPERBUS™ compatibility - not drop-in replaceable	Choose only if existing design uses parallel SRAM interface and can accommodate extra pins and refresh logic

Compared with S27KS0642GABHI020, the Infineon part offers identical performance but updated branding and support; versus ISSI's parallel SRAM, it delivers 60% fewer pins and autonomous refresh - critical for MCU-based designs lacking dedicated memory controllers.

Availability

S27KL0642GABHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI sensor gateways, and medical portable monitors requiring stable component supply and long-term lifecycle assurance.

Supply support for S27KL0642GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

This device belongs to Infineon's HYPERRAM™ product line, designed specifically to replace parallel NOR/PSRAM in MCU-based systems where pin count, power, and ease of integration outweigh legacy interface compatibility.

FAQ

What voltage options does S27KL0642GABHI020 support?

S27KL0642GABHI020 supports two nominal supply configurations: 1.8 V for both VCC (core array) and VCCQ (I/O buffers), or 3.0 V for both. The device does not support split-voltage operation (e.g., 1.8 V VCC with 3.0 V VCCQ). Voltage selection is determined by ordering part number and fixed at manufacture - not user-configurable via register.

Does this device require external refresh commands from the host MCU?

No. S27KL0642GABHI020 contains fully autonomous on-die refresh logic that executes partial or full array refreshes during idle cycles without host intervention. The host sees only a static RAM interface - no refresh registers, timers, or periodic command sequences are needed.

Can RWDS be used as a pure read strobe without write masking functionality?

Yes. RWDS operates in dual mode: during reads, it is driven by the device as a timing reference for data capture; during writes, it is sampled by the device as a byte-enable mask. The function is automatically selected per transaction direction - no configuration register setting is required to enable or disable either role.

Is DCARS supported on all S27KL0642GABHI020 units, or is it option-dependent?

DCARS (DDR Center-Aligned Read Strobe) is enabled by default and supported on all S27KL0642GABHI020 units. It is implemented in hardware and cannot be disabled. The phase-shifted RWDS timing is inherent to the device's read path design and applies to all read transactions at 200 MHz operation.

S27KL0642GABHI020 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HYPERRAM™ KL

Package/Case:: 24-VBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: PSRAM

Technology:: PSRAM (Pseudo SRAM)

Memory Size:: 64Mbit

Memory Organization:: 8M x 8

Memory Interface:: HyperBus

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: 35ns

Access Time:: 35 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 24-FBGA (6x8)

S27KL0642GABHI020 FAQ

1.How can I place an order for S27KL0642GABHI020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S27KL0642GABHI020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S27KL0642GABHI020 reliable?

The price and inventory of S27KL0642GABHI020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0642GABHI020 is usually 5 days.

3.What payment methods are accepted for S27KL0642GABHI020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0642GABHI020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S27KL0642GABHI020?

S27KL0642GABHI020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S27KL0642GABHI020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S27KL0642GABHI020?

For technical support, including S27KL0642GABHI020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0642GABHI020 requirements.

6.How does Aetrix verify that S27KL0642GABHI020 is sourced from the original manufacturer or authorized distributors?

All S27KL0642GABHI020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0642GABHI020 meets industry standards.

7.What is the process for return or replacement of S27KL0642GABHI020?

All S27KL0642GABHI020 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0642GABHI020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S27KL0642GABHI020 part is unused and in its original packaging.

Return procedure for S27KL0642GABHI020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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