Infineon Technologies S27KL0642GABHI023

Overview

S27KL0642GABHI023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting 200 MHz DDR clocking, 400 MBps data throughput, and industrial temperature range (–40°C to +85°C). It functions as a high-bandwidth, low-pin-count external memory buffer in microcontroller-based embedded systems requiring seamless SRAM-like access to DRAM density.

For engineers reviewing the S27KL0642GABHI023 datasheet, S27KL0642GABHI023 pinout, S27KL0642GABHI023 application, or S27KL0642GABHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write strobe synchronization, configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and FBGA-24 package compatibility with space-constrained PCB layouts.

Technical Context

The device implements a self-refresh DRAM core with integrated refresh control logic, eliminating host-managed refresh cycles and presenting static RAM semantics to the controller. Its HYPERBUS™ interface uses 8-bit DQ lines with bidirectional RWDS for latency signaling and data strobing - not a standard SPI or parallel NOR interface.

It supports both single-ended (11-signal) and optional differential clock (12-signal) configurations, with DCARS mode enabling phase-shifted RWDS alignment to maximize read data eye margin at 200 MHz. Command/address and data share the same DQ[7:0] bus under time-multiplexed protocol.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for automated SMT assembly and thermal management in dense layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHI020 (identical function), and IS66WV12816EBLL-70BLI (wider bus, no self-refresh), the S27KL0642GABHI023 uniquely balances DDR bandwidth, ultra-low pin count, and SRAM-like usability - making it optimal for new designs targeting MCU external memory expansion with minimal footprint and power budget.

Availability

S27KL0642GABHI023 is available at Aetrix Electronics and suitable for industrial HMIs, automotive ADAS modules, and medical IoT edge nodes requiring stable component supply, long-lifecycle support, and AEC-Q100 grade assurance.

Supply support for S27KL0642GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and QSPI Flash+RAM combinations in resource-constrained embedded systems needing high bandwidth and low pin count.

FAQ

Does S27KL0642GABHI023 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host processor sees only SRAM-like behavior - no refresh commands, timers, or scheduling are required. Refresh occurs transparently between transactions, triggered by internal counters and signaled via RWDS latency pulses at transaction start.

What is the role of the RWDS signal in read versus write operations?

In read operations, RWDS is driven by the device as a read data strobe, edge-aligned with DQ transitions to indicate valid data windows. In write operations, RWDS is driven by the host as a write data mask, controlling which byte lanes accept incoming data. During idle or refresh, RWDS remains high-impedance or tri-stated per HYPERBUS™ protocol rules.

Can S27KL0642GABHI023 operate with only single-ended clock (CK), or is CK# mandatory?

CK# is optional. The device supports single-ended clocking (CK only) in standard mode, using 11-signal HYPERBUS™ configuration. CK# is required only when enabling DCARS mode or when system-level jitter requirements demand differential clock rejection - in which case the full 12-signal interface must be implemented.

How does burst length configuration affect timing and power consumption?

Longer bursts (e.g., 128 bytes) improve sequential throughput but increase transaction duration, delaying internal refresh opportunities and raising average current. Shorter bursts (e.g., 16 bytes) reduce latency variance and allow more frequent refresh, lowering peak current. Configuration is register-controlled and persists across power cycles via nonvolatile settings stored in on-die configuration registers.