Infineon Technologies S27KL0642GABHI030

Overview

S27KL0642GABHI030 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and delivering 400 MBps throughput in linear burst mode. It integrates on-die refresh control, uses 24-ball FBGA packaging, and targets embedded systems requiring low-pin-count high-bandwidth memory with industrial temperature range (–40°C to +85°C).

For engineers reviewing the S27KL0642GABHI030 datasheet, S27KL0642GABHI030 pinout, S27KL0642GABHI030 application, or S27KL0642GABHI030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write strobe behavior, configurable burst lengths (16–128 bytes), partial array refresh support, and DCARS phase-shifted strobe capability for timing margin optimization.

Technical Context

This PSRAM implements a DDR HYPERBUS™ interface with 8-bit DQ bus, single-ended or optional differential clock (CK/CK#), and bidirectional RWDS used as both read data strobe and write data mask. Internal logic manages self-refresh without host intervention, but requires host-enforced transaction length limits to accommodate internal refresh cycles.

The device supports linear and wrapped burst modes (16/32/64/128 bytes), hybrid burst (wrapped + linear), configurable output drive strength, and four power modes: active, interface standby, hybrid sleep, and deep power-down - with 12 µA deep power-down current at 2.0 V and 105°C.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHI030, this part offers identical functionality and compatibility; versus IS66WV12816EBLL-35B, it trades pin count and simplicity for 11× higher bandwidth and integrated power management - critical for modern embedded SoC memory expansion.

Availability

S27KL0642GABHI030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI accelerators, and medical imaging front-ends requiring stable component supply with industrial temperature rating and long-term lifecycle assurance.

Supply support for S27KL0642GABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This device belongs to the HYPERRAM™ product line, designed specifically to deliver high-bandwidth, low-pin-count memory expansion for resource-constrained embedded processors without requiring DRAM controller complexity.

FAQ

What is the role of the RWDS signal in read versus write operations?

RWDS serves as a bidirectional strobe: during reads, it outputs an initial latency indicator and then acts as a read data strobe aligned to data edges; during writes, it functions as a write data mask input, allowing selective byte enabling. Its timing is tightly coupled to CK/CK# and supports DCARS phase shifting for improved read margin.

Does S27KL0642GABHI030 require external refresh circuitry?

No. The device contains on-die self-refresh logic that automatically manages DRAM array refresh without host intervention. The host only needs to observe maximum transaction duration limits to allow internal refresh cycles - eliminating need for refresh controllers or timing-critical software refresh routines.

Can this part operate at both 1.8 V and 3.0 V simultaneously?

No. VCC and VCCQ must be supplied at the same nominal voltage - either 1.8 V ±0.15 V or 3.0 V ±0.3 V - as specified by the ordering code. Mixed-voltage operation is not supported; the device does not contain internal level shifters between core and I/O domains.

How does Hybrid Sleep mode differ from Deep Power-Down?

Hybrid Sleep retains memory contents with ultra-low leakage while allowing sub-microsecond wake-up; Deep Power-Down cuts power to all non-retentive circuits, reducing current to 12 µA but requiring ~100 µs initialization before next access. Hybrid Sleep is ideal for frequent low-latency wake events; Deep Power-Down suits extended idle periods.