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Infineon Technologies S27KL0642GABHM020
- Part No.:
- S27KL0642GABHM020
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S27KL0642GABHM020.pdf
- Description:
- IC PSRAM 64MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,310
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Product details
Overview
S27KL0642GABHM020 from Infineon is a 64-Mbit Automotive Grade 1 HyperRAM self-refresh DRAM with HyperBus interface, operating at 1.8 V or 3.0 V, supporting up to 200 MHz DDR clock rate and delivering 400 MBps throughput. It integrates on-die refresh control, eliminating host-managed refresh, and features bidirectional RWDS for latency signaling and data strobe/masking in automotive infotainment and ADAS display buffers.
For engineers reviewing the S27KL0642GABHM020 datasheet, S27KL0642GABHM020 pinout, S27KL0642GABHM020 application, or S27KL0642GABHM020 equivalent, key selection criteria include AEC-Q100 Grade 1 qualification (–40 °C to +125 °C), configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and FBGA-24 package compatibility with HyperBus-enabled microcontrollers like Cypress Traveo II or Infineon AURIX TC4xx.
Technical Context
The S27KL0642GABHM020 implements a pseudo-static RAM architecture using 38-nm DRAM cells with integrated self-refresh logic, presenting a static-memory interface while internally managing row activation and periodic refresh without host intervention. Its HyperBus interface uses only 11–12 signals (including optional differential CK#/CK) and an 8-bit DQ bus with bidirectional RWDS for timing alignment and write masking.
It supports linear and wrapped burst transfers (16/32/64/128-byte), DDR data transfers on both clock edges, and configurable output drive strength. The device enters partial or full array refresh autonomously during idle cycles, with initial access latency signaled via RWDS high/low state at transaction start.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (8 MByte), organized as 1,048,576 × 8 bits - enables compact high-bandwidth frame buffer storage |
| Interface Standard | HyperBus v2.0 DDR interface - reduces signal count vs. parallel NOR/NAND while sustaining 400 MBps throughput |
| Max Clock Rate | 200 MHz at both 1.8 V and 3.0 V - ensures deterministic timing across dual-supply configurations |
| Operating Temp | AEC-Q100 Grade 1: –40 °C to +125 °C - qualified for under-hood and instrument cluster deployment |
| Burst Lengths | Configurable 16/32/64/128-byte wrapped or linear bursts - optimizes cache-line fill vs. sequential graphics streaming |
| Power Modes | Hybrid Sleep and Deep Power Down - reduces standby current to <10 µA, critical for always-on vehicle systems |
| Access Time | tACC ≤ 35 ns - guarantees low-latency response for real-time display controller read requests |
Pinout & Package
Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, automotive-qualified footprint per Infineon specification 002-31332 Rev. **.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC / VCCQ | Core & I/O supply | Separate 1.8 V or 3.0 V inputs enable independent voltage scaling for logic and interface |
| CK / CK# | Clock input | Differential clock option improves jitter tolerance in noisy automotive EMI environments |
| CS# | Chip select | Active-low enable controlling transaction initiation and termination on HyperBus |
| RWDS | Bidirectional strobe | Signals initial latency, acts as read data strobe, and provides byte-level write mask during writes |
| DQ[7:0] | Data bus | 8-bit DDR bidirectional data path - transfers two bytes per clock cycle for 400 MBps peak bandwidth |
| RESET# | Hardware reset | Asynchronous active-low reset that clears internal state and forces re-initialization sequence |
Key Features
| Feature | Design Value |
|---|---|
| Self-refresh DRAM architecture | Eliminates external refresh controller and timing overhead - simplifies SoC integration and reduces firmware complexity |
| HyperBus interface (11–12 pins) | Reduces PCB routing layers and pin count vs. parallel NOR/NAND - lowers system cost and layout risk |
| Configurable output drive strength | Allows optimization of signal integrity and EMI for varying trace lengths and load conditions on automotive PCBs |
| DCARS support (optional) | Enables phase-shifted RWDS alignment to widen read data eye - improves timing margin at 200 MHz in marginal layouts |
| AEC-Q100 Grade 1 qualification | Validated for continuous operation at +125 °C ambient - meets reliability requirements for safety-critical automotive domains |
Applications
| Automotive Instrument Clusters | ADAS Display Buffers |
|---|---|
Use Scenario: Real-time rendering of speed, navigation, and warning overlays on TFT-LCD clusters with >60 Hz update rates. IC Role / Device Role / Timing Role: Frame buffer memory interfaced directly to display controller via HyperBus, providing low-latency pixel data access. Use Value: 200 MHz DDR operation and 35 ns tACC ensure sub-16.7 ms frame fetch - enabling smooth animation without tearing or stutter. | Use Scenario: Storing processed camera feed and sensor fusion outputs for HUD projection or rearview display. IC Role / Device Role / Timing Role: High-throughput intermediate buffer between image signal processor and display engine, supporting burst-aligned DMA transfers. Use Value: 128-byte wrapped burst mode matches typical cache line size - minimizing bus turnaround and maximizing effective bandwidth utilization. |
| Infotainment System UI Memory | Telematics Gateway Data Cache |
Use Scenario: Hosting GUI assets (icons, fonts, animations) and OS kernel modules in head-unit Linux-based infotainment platforms. IC Role / Device Role / Timing Role: Pseudo-SRAM replacement for legacy PSRAM or LPDDR2, accessed as memory-mapped peripheral by ARM Cortex-A application processor. Use Value: No refresh management required - eliminates CPU interrupt overhead and simplifies BSP driver development. | Use Scenario: Caching CAN FD and cellular modem packet metadata during OTA update staging and diagnostic logging. IC Role / Device Role / Timing Role: Low-power, high-reliability scratchpad memory for time-critical telematics event buffering with guaranteed retention at 125 °C. Use Value: Hybrid Sleep mode draws <15 µA - extends backup power hold-up time during ignition-off periods without data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive PSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-SXIT | 4-Mbit Quad SPI FRAM, 108 MHz max, no refresh, but lower density and serial interface | Limited to small configuration tables or log buffers - insufficient for full frame buffers | Select only when non-volatility and unlimited endurance outweigh bandwidth and capacity needs |
| IS45S32800J-6BLI | 256-Mbit LPDDR2, 400 MHz, 16-bit bus, requires external refresh controller and more pins | Higher bandwidth but demands complex PHY, termination, and thermal management | Choose for systems already committed to LPDDR2 infrastructure and needing >64 Mbit capacity |
Compared with CY15B104QN-SXIT and IS45S32800J-6BLI, the S27KL0642GABHM020 uniquely balances automotive-grade reliability, HyperBus pin efficiency, self-refresh autonomy, and 64-Mbit capacity - making it optimal for cost-sensitive, space-constrained display subsystems requiring deterministic latency and minimal host software overhead.
Availability
S27KL0642GABHM020 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS display buffers, and infotainment UI memory requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle assurance.
Supply support for S27KL0642GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and memory solutions, with global R&D and manufacturing infrastructure.
The S27KL0642GABHM020 belongs to Infineon's HyperRAM product line, designed specifically for automotive and industrial systems needing high-bandwidth, low-pin-count, self-refresh memory with extended temperature operation.
FAQ
What is the difference between S27KL0642GABHM020 and standard DDR SDRAM?
The S27KL0642GABHM020 is a self-refresh DRAM with HyperBus interface, not a standard DDR SDRAM. It requires no external refresh controller or complex initialization sequence. Its 11–12-pin interface, integrated refresh logic, and pseudo-static behavior simplify integration versus DDR SDRAM, which mandates precise timing control, periodic refresh commands, and higher pin count.
Does S27KL0642GABHM020 support both 1.8 V and 3.0 V operation simultaneously?
No. The S27KL0642GABHM020 supports either 1.8 V or 3.0 V for VCC and VCCQ, depending on the specific ordering part number. This device (GABHM020) is configured for 1.8 V operation per Infineon's ordering matrix in datasheet section 13.2. Dual-voltage simultaneous operation is not supported.
How does RWDS function during a write transaction?
During write transactions, RWDS operates as an input to the S27KL0642GABHM020. When RWDS is HIGH, the corresponding byte on DQ[7:0] is masked and not written to memory. When LOW, the byte is valid and stored. This enables byte-level write precision without requiring full-word writes or additional address decoding logic in the host controller.
Is DCARS functionality enabled by default on S27KL0642GABHM020?
DCARS (DDR Center-Aligned Read Strobe) is an optional feature implemented in certain HyperRAM variants. The S27KL0642GABHM020 supports DCARS per datasheet section 12, but its activation depends on register configuration (DCARS_EN bit in Mode Register). It is disabled by default after power-up and must be explicitly enabled by the host via HyperBus register write.
S27KL0642GABHM020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S27KL0642GABHM020 FAQ
1.How can I place an order for S27KL0642GABHM020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S27KL0642GABHM020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S27KL0642GABHM020 reliable?
The price and inventory of S27KL0642GABHM020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0642GABHM020 is usually 5 days.
3.What payment methods are accepted for S27KL0642GABHM020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0642GABHM020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S27KL0642GABHM020?
S27KL0642GABHM020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S27KL0642GABHM020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S27KL0642GABHM020?
For technical support, including S27KL0642GABHM020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0642GABHM020 requirements.
6.How does Aetrix verify that S27KL0642GABHM020 is sourced from the original manufacturer or authorized distributors?
All S27KL0642GABHM020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0642GABHM020 meets industry standards.
7.What is the process for return or replacement of S27KL0642GABHM020?
All S27KL0642GABHM020 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0642GABHM020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S27KL0642GABHM020 part is unused and in its original packaging.
Return procedure for S27KL0642GABHM020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S27KL0642GABHM020 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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