Infineon Technologies S27KL0642GABHM023

Overview

S27KL0642GABHM023 from Infineon is a 64-Mbit Automotive Grade 1 HyperRAM self-refresh DRAM with HyperBus interface, operating at 1.8 V or 3.0 V, supporting up to 200 MHz DDR clocking and delivering 400 MBps throughput. It integrates on-die refresh control, eliminating host-managed refresh overhead, and features bidirectional RWDS for read strobe/write mask, DCARS option, and partial/full array refresh modes. Used in automotive ADAS display buffers and infotainment graphics subsystems requiring high-bandwidth, low-pin-count memory.

For engineers reviewing the S27KL0642GABHM023 datasheet, S27KL0642GABHM023 pinout, S27KL0642GABHM023 application, or S27KL0642GABHM023 equivalent, key selection criteria include HyperBus timing compliance (tACC ≤ 35 ns), AEC-Q100 Grade 1 temperature range (–40 °C to +125 °C), FBGA-24 package compatibility, burst configuration flexibility (16–128 byte wrapped/linear), and power mode support (Hybrid Sleep, Deep Power Down).

Technical Context

The S27KL0642GABHM023 implements a DDR HyperBus interface with 8-bit DQ bus, single-ended or differential CK/CK#, and bidirectional RWDS that serves as initial latency indicator, read data strobe, and write data mask. Its internal logic manages self-refresh during idle cycles without host intervention, enabling PSRAM-like operation despite DRAM cell structure.

It supports configurable burst lengths (16/32/64/128 bytes), hybrid burst mode (wrapped + linear), and programmable output drive strength. Power management includes Hybrid Sleep (retains data, fast wake) and Deep Power Down (ultra-low current, full retention loss on exit), with partial array refresh options (1/8, 1/4, 1/2) to balance latency and power.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, automotive-qualified footprint compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-refresh DRAM applications.

Compared with CY15B104QN-PSOC and IS43TR16256B-125KBL, the S27KL0642GABHM023 uniquely balances automotive-grade reliability, HyperBus simplicity, and 400 MBps throughput-making it optimal for mid-bandwidth embedded graphics where LPDDR complexity or FRAM density limits are unacceptable.

Availability

S27KL0642GABHM023 is available at Aetrix Electronics and suitable for automotive ADAS display buffers, infotainment graphics framestores, telematics modem caches, and domain controller boot memory requiring stable component supply across extended temperature ranges.

Supply support for S27KL0642GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and memory solutions, with global R&D and manufacturing facilities.

The HyperRAM product line targets automotive and industrial systems needing high-speed, low-pin-count memory with integrated refresh-designed specifically to replace parallel NOR/NAND and reduce interface complexity in safety-critical ECUs.

FAQ

What is the difference between S27KL0642GABHM023 and standard DDR SDRAM?

The S27KL0642GABHM023 is a self-refresh DRAM with HyperBus interface, not a standard DDR SDRAM. It requires no external refresh controller or complex PHY; refresh is fully managed internally. Its 12-signal interface replaces 40+ pin DDR buses, and it delivers deterministic 35 ns access latency-unlike DDR SDRAM's variable CAS latency and mandatory refresh scheduling.

Does S27KL0642GABHM023 support both 1.8 V and 3.0 V operation simultaneously?

No. The S27KL0642GABHM023 supports either 1.8 V or 3.0 V for both VCC and VCCQ, selected at manufacture via ordering part number. The GABHM023 suffix indicates 1.8 V operation. Dual-voltage operation on a single device is not supported; voltage must be consistent across both supplies.

How does RWDS function during write transactions?

During write transactions, RWDS acts as a write data mask: HIGH disables writing to the corresponding DQ byte, LOW enables it. This allows byte-level write masking without splitting bursts, supporting unaligned writes and merging multiple partial updates into one transaction-critical for efficient register or descriptor table updates.

Is DCARS enabled by default, and how is it configured?

DCARS is optional and disabled by default. It is enabled by setting bit 1 of the Configuration Register (CR[1]) via HyperBus register write. When enabled, RWDS transitions are phase-shifted relative to CK to center-align with read data eye-improving timing margin in high-noise or long-trace automotive layouts.