Infineon Technologies S27KL0642GABHV020

Overview

S27KL0642GABHV020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting up to 200 MHz DDR clock rate and delivering 400 MBps data throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial-plus temperature range (–40°C to +105°C) in 24-ball FBGA package. Used in embedded systems requiring low-pin-count, high-bandwidth memory expansion without external refresh management.

For engineers reviewing the S27KL0642GABHV020 datasheet, S27KL0642GABHV020 pinout, S27KL0642GABHV020 application, or S27KL0642GABHV020 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS phase alignment for read eye optimization, partial array refresh configuration, DCARS support, and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS host processors.

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh during idle cycles, eliminating host-side refresh overhead. Its HYPERBUS™ interface uses only 11–12 signals (including optional CK#), with command/address and data multiplexed over DQ[7:0], enabling compact PCB routing.

The device supports both single-ended and differential clocking, and RWDS serves dual roles: as initial latency indicator at transaction start and as edge-aligned read strobe or write mask during transfers. DCARS mode provides a second-phase-shifted clock to center RWDS transitions within the read data eye, improving timing margin at 200 MHz.

Key Specifications

Pinout & Package

24-ball FBGA (5 × 5 array, 0.8 mm pitch) with ball-out optimized for signal integrity and thermal dissipation in space-constrained designs. Pin functions validated per Infineon datasheet 002-24692 Rev. *I.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHV020, the Infineon part offers identical performance but benefits from unified post-merger technical support; versus ISSI's parallel SRAM, it trades deterministic latency for 3× lower pin count, 10× lower standby power, and integrated refresh - critical for modern embedded SoC interfaces.

Availability

S27KL0642GABHV020 is available at Aetrix Electronics and suitable for automotive infotainment head units, industrial PLC HMIs, and edge AI sensor hubs requiring stable component supply, AEC-Q100 qualification, and high-bandwidth low-pin-count memory expansion.

Supply support for S27KL0642GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and NOR flash in memory-mapped MCU and SoC applications where high bandwidth, low pin count, and embedded self-refresh are essential.

FAQ

What is the minimum initial access latency for a read transaction at 200 MHz?

The minimum initial access latency is one clock cycle (1× tCK), indicated by a low-level pulse on RWDS at transaction start. This latency may extend to two cycles (2× tCK) if internal refresh is pending, as signaled by a high-level RWDS pulse. The host must sample RWDS before reading DQ to determine actual latency count before data valid window begins.

Does S27KL0642GABHV020 require external refresh circuitry?

No. The device contains fully autonomous on-die refresh logic that executes partial or full array refreshes during idle periods without host intervention. The host treats it as pseudo-static memory - no refresh commands, timers, or scheduling are needed, simplifying firmware and reducing CPU load.

Can DCARS mode be disabled to use standard RWDS timing?

Yes. DCARS is an optional feature enabled via Configuration Register 1 (bit CR1[2]). When disabled, RWDS operates in standard edge-aligned mode synchronized to CK. Enabling DCARS introduces a fixed 90° phase shift to RWDS relative to CK, which must be accounted for in controller timing calibration.

What are the voltage requirements for VCC and VCCQ in industrial-plus operation?

For Industrial Plus (–40°C to +105°C), the device supports two configurations: 1.8 V ±0.15 V for both VCC (array) and VCCQ (I/O), or 3.0 V ±0.3 V for both supplies. Mixed-voltage operation (e.g., 1.8 V VCC / 3.0 V VCCQ) is not supported per datasheet Section 9.4.2.