Infineon Technologies S27KL0642GABHV023

Overview

S27KL0642GABHV023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial-plus temperature range (−40°C to +105°C) in 24-ball FBGA package. Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory with no host-managed refresh.

For engineers reviewing the S27KL0642GABHV023 datasheet, S27KL0642GABHV023 pinout, S27KL0642GABHV023 application, or S27KL0642GABHV023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read capture, DCARS support, burst configuration register settings, and power mode sequencing for hybrid sleep/deep power-down entry.

Technical Context

This PSRAM implements a self-refresh DRAM core with integrated refresh controller, eliminating host-side refresh management. Its HYPERBUS™ interface uses 8-bit DQ lines with single- or differential clock (CK/CK#), CS#, RESET#, and bidirectional RWDS - all LV-CMOS compatible. Command/address and data share the same DQ bus in time-multiplexed fashion.

Read transactions begin with six CA bytes followed by initial access latency (tACC = 35 ns max), then DDR-aligned data transfers. RWDS serves dual roles: output indicating refresh latency at transaction start and read-data strobe edge-aligned with DQ; input as write mask during writes. Optional DCARS shifts RWDS phase to center it within the read data eye.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with ball map matching JEDEC MO-270CA. Package supports automated optical inspection and fine-pitch reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641GABHV020, this part adds DCARS and dual-voltage support, enabling broader system compatibility; versus S27KS0642GABHV020, it offers identical performance but distinct manufacturing traceability for OEM audit compliance.

Availability

S27KL0642GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, smart home gateways, and medical patient monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KL0642GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and wafer fabrication facilities.

This device belongs to the HYPERRAM™ family - designed specifically to replace parallel NOR/NAND flash in MCU-based systems needing fast, low-pin-count, pseudo-static memory with no refresh overhead.

FAQ

What is the purpose of the RWDS signal in S27KL0642GABHV023?

RWDS is a bidirectional strobe used to indicate initial refresh latency at transaction start and to synchronize read data capture. During writes, it acts as a byte-enable mask. Its edge alignment with DQ is critical for timing closure, and optional DCARS allows phase shifting to center RWDS in the read data eye for robustness at 200 MHz.

Does S27KL0642GABHV023 require external refresh management?

No. The device integrates autonomous self-refresh logic that schedules partial or full array refreshes during idle periods. The host processor interacts with it as a static RAM - no refresh commands, counters, or timing windows are required in software or firmware.

Can S27KL0642GABHV023 operate at both 1.8 V and 3.0 V simultaneously?

No. VCC and VCCQ must be supplied at the same nominal voltage: either 1.8 V ±0.15 V or 3.0 V ±0.3 V. Mixing voltages violates absolute maximum ratings and may cause functional failure or accelerated wear-out.

How is burst length configured in S27KL0642GABHV023?

Burst length is set via Configuration Register 0 (CR0), bit [1:0], which selects wrapped burst sizes of 16, 32, 64, or 128 bytes. Linear burst is also supported. The setting persists across power cycles and is applied automatically on each transaction initiation.