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Infineon Technologies S27KL0643DPBHB023

Part No.:
S27KL0643DPBHB023
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS27KL0643DPBHB023.pdf
Description:
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,055

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Product details

Overview

S27KL0643DPBHB023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It integrates on-die refresh control, uses 24-ball FBGA package, and targets high-bandwidth, low-pin-count memory expansion in microcontroller-based systems requiring seamless SRAM-like access to DRAM density.

For engineers reviewing the S27KL0643DPBHB023 datasheet, S27KL0643DPBHB023 pinout, S27KL0643DPBHB023 application, or S27KL0643DPBHB023 equivalent, key selection criteria include xSPI octal timing compliance, RWDS strobe behavior during read/write, configurable burst lengths (16–128 bytes), hybrid sleep/deep power down current specs (12–15 µA), and AEC-Q100 Grade 2/3 qualification for automotive use.

Technical Context

This PSRAM implements an xSPI-compliant octal DDR interface with 11–12 signal lines (including optional CK#/RWDS/DCARS), where all data transfers occur on both edges of CK. Internal logic manages autonomous partial/full array refresh without host intervention, enabling SRAM-like command protocol while retaining DRAM density efficiency.

The device supports linear and wrapped burst modes (8–64 clocks), configurable output drive strength, and dual-voltage I/O (1.8 V/3.0 V). RWDS serves as bidirectional strobe-outputting refresh latency indicator at transaction start, acting as read data strobe or write mask-and optionally supports DDR center-aligned read strobe (DCARS) with phase-shifted timing to align transitions within the data eye.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (8 MB), organized as 8,388,608 × 8-bit for direct byte-accessible storage expansion
Interface StandardxSPI Octal DDR - 8-bit DQ bus + CK/CS#/RWDS enables 2-byte/cycle transfer, reducing pin count vs parallel SRAM
Max Clock Rate200 MHz DDR - delivers 400 MBps peak bandwidth; requires precise setup/hold timing on CK and RWDS
Burst LengthsConfigurable: 16/32/64/128 bytes (8/16/32/64 clocks) - balances latency, throughput, and refresh scheduling overhead
Power ModesHybrid Sleep (330 µA @ 2.0 V) and Deep Power Down (12 µA @ 2.0 V) - enable ultra-low idle power in battery-sensitive edge devices
Operating TempIndustrial Plus (−40°C to +105°C) - qualified for under-hood automotive and industrial control environments
Package24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch - surface-mount compatible with standard reflow profiles and space-constrained PCBs

Pinout & Package

24-ball FBGA (5 × 5 array, 0.8 mm pitch) with ball pitch compliant to JEDEC MO-270CA. Package supports automated placement and thermal performance suitable for industrial and automotive applications.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Clock input (single-ended or differential)DDR timing reference; CK# enables noise-immune clocking; both edges sample DQ/RWDS
CS#Chip selectActive-low transaction initiator; must remain asserted for full burst duration and refresh window allowance
RWDSBidirectional read-write data strobeIndicates refresh latency at start; acts as read strobe or write mask; DCARS mode shifts phase for optimal data capture
DQ[7:0]Octal data I/ODDR data path carrying command/address/data; LV-CMOS compatible at 1.8 V or 3.0 V VCCQ
RESET#Hardware resetAsynchronous active-low pin forcing device into known state; required before initialization sequence

Key Features

FeatureDesign Value
Self-refresh DRAM coreEliminates external refresh controller; internal logic schedules partial/full array refresh between transactions
Configurable burst wrappingEnables cache-line-aligned access (e.g., 32-byte bursts) without address wrap-around logic in host MCU
DCARS timing optionPhase-shifts RWDS relative to CK to center strobe edge in read data eye-critical for signal integrity at 200 MHz DDR
Dual supply voltage supportVCC/VCCQ selectable at 1.8 V or 3.0 V per ordering code-allows interoperability with mixed-voltage SoC interfaces
AEC-Q100 Grade 2Qualified for −40°C to +105°C operation with stress testing-meets automotive infotainment and ADAS memory requirements

Applications

Automotive Instrument ClustersIndustrial HMI Panels

Use Scenario: Real-time rendering of vector graphics and animated UI elements in digital dashboards with limited MCU external memory pins.

IC Role / Device Role / Timing Role: PSRAM provides 8 MB frame buffer and overlay storage; xSPI octal interface replaces 16-bit parallel bus, saving 8+ PCB traces.

Use Value: Enables 400 MBps pixel streaming at 60 Hz with <35 ns tACC, while hybrid sleep mode cuts idle power to 330 µA for always-on display standby.

Use Scenario: Local data logging and GUI caching in programmable logic controllers with ARM Cortex-M7 hosts.

IC Role / Device Role / Timing Role: Acts as expandable SRAM replacement; RWDS-driven timing simplifies FPGA/ASIC interface design versus asynchronous SRAM.

Use Value: Configurable 16–128 byte bursts match Modbus TCP packet sizes; deep power down (12 µA) extends battery backup runtime during mains loss.

Edge AI Sensor NodesMedical Portable Monitors

Use Scenario: On-device inference buffering for microML workloads running on resource-constrained microcontrollers.

IC Role / Device Role / Timing Role: Supplies low-latency, high-throughput scratchpad memory for tensor intermediate storage; DCARS ensures reliable read capture at 200 MHz.

Use Value: 200 MHz DDR clock supports real-time feature extraction; AEC-Q100 Grade 2 qualification validates reliability in mobile medical equipment vibration/thermal cycles.

Use Scenario: High-resolution waveform display and alarm history storage in portable ECG/SpO₂ monitors.

IC Role / Device Role / Timing Role: PSRAM serves as display RAM and circular buffer for real-time physiological data; self-refresh eliminates host refresh overhead.

Use Value: 64 Mb density stores >30 seconds of 12-bit sampled waveforms; industrial plus temperature range (−40°C to +105°C) covers clinical and field-use extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S27KS0643DPBHB020Same die, identical xSPI timing and register map; differs only in AEC-Q100 grade (Grade 3 vs Grade 2) and VCCQ tolerance (3.0 V only)Valid for automotive cabin modules (Grade 3), but not under-hood due to +105°C requirementSelect when Grade 3 qualification suffices and 3.0 V-only I/O is acceptable
Winbond W958D8MBYAQuad SPI interface (4-bit DQ), max 133 MHz clock, no DCARS or RWDS phase shift; 1.8 V onlyLimited to lower-bandwidth applications; lacks automotive temp range and hybrid sleep modeChoose only if pin count allows quad SPI and bandwidth ≤266 MBps is sufficient

Compared with S27KL0643DPBHB023, the Cypress alternative offers identical functionality with relaxed automotive grading, while Winbond's part trades octal bandwidth and advanced strobe control for simpler interface and lower cost-making it viable only in non-automotive, lower-performance designs.

Availability

S27KL0643DPBHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI sensor nodes, and portable medical monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KL0643DPBHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-density, low-pin-count PSRAMs optimized for microcontroller-based systems needing SRAM-like simplicity with DRAM economics-targeting automotive displays, industrial HMIs, and edge AI acceleration.

FAQ

Does S27KL0643DPBHB023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that autonomously manages partial and full array refresh operations between host transactions. The host only needs to observe maximum burst length limits and initial access latency indications via RWDS-no refresh commands or timing control are required.

What is the function of RWDS during a write transaction?

During write transactions, RWDS operates as a write data mask: each rising edge samples one byte of DQ[7:0], and the host asserts RWDS only for valid data bytes. This enables partial writes without read-modify-write cycles, reducing bus traffic and improving efficiency in sparse update scenarios like GUI element overlays.

Can S27KL0643DPBHB023 operate with a single-ended clock only?

Yes. The device supports single-ended CK input by default. CK# is optional and used only when differential clocking is needed for noise immunity in electrically noisy environments such as automotive powertrain or industrial motor drives. No configuration register changes are required to switch between modes.

How does DCARS improve timing margin in high-speed reads?

DCARS shifts the RWDS output phase by one-half CK cycle relative to standard RWDS, positioning its transition edge near the center of the read data eye. This increases setup/hold margin by up to 0.5 ns at 200 MHz, directly improving signal integrity and reducing bit error rates in layouts with trace skew or impedance discontinuities.

S27KL0643DPBHB023 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™ KL
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
64Mbit
Memory Organization:
8M x 8
Memory Interface:
SPI - Octal I/O
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
36ns
Access Time:
36 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S27KL0643DPBHB023 FAQ

1.How can I place an order for S27KL0643DPBHB023 through Aetrix?

Please submit a Request for Quotation (RFQ) for S27KL0643DPBHB023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S27KL0643DPBHB023 reliable?

The price and inventory of S27KL0643DPBHB023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0643DPBHB023 is usually 5 days.

3.What payment methods are accepted for S27KL0643DPBHB023?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0643DPBHB023 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S27KL0643DPBHB023?

S27KL0643DPBHB023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S27KL0643DPBHB023 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S27KL0643DPBHB023?

For technical support, including S27KL0643DPBHB023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0643DPBHB023 requirements.

6.How does Aetrix verify that S27KL0643DPBHB023 is sourced from the original manufacturer or authorized distributors?

All S27KL0643DPBHB023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0643DPBHB023 meets industry standards.

7.What is the process for return or replacement of S27KL0643DPBHB023?

All S27KL0643DPBHB023 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0643DPBHB023, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S27KL0643DPBHB023 part is unused and in its original packaging.

Return procedure for S27KL0643DPBHB023:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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