Infineon Technologies S27KL0643DPBHI023

Overview

S27KL0643DPBHI023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V I/O, 200 MHz DDR clocking, and 400 MBps data throughput. It delivers linear/wrapped burst lengths up to 128 bytes, configurable drive strength, and operates across industrial temperature range (–40°C to +85°C) in a 24-ball FBGA package for embedded microcontroller memory expansion.

For engineers reviewing the S27KL0643DPBHI023 datasheet, S27KL0643DPBHI023 pinout, S27KL0643DPBHI023 application, or S27KL0643DPBHI023 equivalent, this device serves as a drop-in high-bandwidth, low-pin-count PSRAM replacement for legacy SRAM and NOR flash in resource-constrained MCU systems requiring deterministic latency and minimal board space.

Technical Context

The S27KL0643DPBHI023 implements an xSPI-compliant octal DDR interface with 11–12 signal lines (including optional CK#/RWDS), using LV-CMOS signaling and supporting both single-ended and differential clock modes. Its internal refresh controller eliminates host-managed refresh cycles while maintaining DRAM density advantages.

It features configurable burst behavior (linear, wrapped, hybrid), programmable output drive strength, and four power modes - including Hybrid Sleep and Deep Power Down - with standby current as low as 12 µA at 2.0 V and 105 °C. The device uses 38-nm DRAM technology and supports DCARS for improved read timing margin.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball grid layout optimized for signal integrity and thermal dissipation in high-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM memory expansion applications.

Compared with S27KL0643DPBHI023, the Cypress alternative offers identical functionality with higher temperature rating but same footprint and timing, whereas the ISSI SRAM trades bandwidth and power efficiency for deterministic single-cycle access - making it viable only in non-xSPI legacy designs.

Availability

S27KL0643DPBHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, and edge AI sensor gateways requiring stable component supply, AEC-Q100 compliance, and high-density memory expansion with minimal PCB footprint.

Supply support for S27KL0643DPBHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-bandwidth, low-pin-count PSRAMs targeting memory-constrained MCUs and SoCs needing SRAM-like simplicity with DRAM density - specifically engineered for embedded graphics, real-time data buffering, and firmware overlay use cases.

FAQ

What voltage levels does the S27KL0643DPBHI023 support for VCC and VCCQ?

The S27KL0643DPBHI023 supports either 1.8 V ±0.15 V or 3.0 V ±0.3 V for both VCC (array supply) and VCCQ (I/O buffer supply), selected at purchase via ordering code. Both supplies must be at the same nominal voltage; mixing 1.8 V and 3.0 V is not permitted. This dual-voltage capability enables seamless integration with mixed-supply SoCs without level-shifting circuitry.

Does the device require external refresh commands from the host controller?

No. The S27KL0643DPBHI023 contains fully autonomous self-refresh logic that manages all DRAM array refresh cycles internally. The host only issues standard xSPI commands (READ/WRITE/RESET); no refresh scheduling, timing control, or hidden refresh cycles are exposed to software. This makes it functionally identical to SRAM from a system-level perspective.

Can RWDS be used as a write mask during WRITE transactions?

Yes. During WRITE transactions, RWDS operates as an input and functions as a per-byte write mask: each rising edge samples one byte's mask bit on DQ[7:0]. When RWDS is high, the corresponding byte is written; when low, that byte is masked. This enables precise partial writes without read-modify-write sequences, reducing bus traffic and latency in mixed-data updates.

Is DCARS functionality enabled by default, or does it require register configuration?

DCARS is disabled by default after power-up or hardware reset. It must be explicitly enabled by writing '1' to bit 7 of the Configuration Register (CR[7]) via the WRITE ANY REGISTER command. Once enabled, the internal phase-shifted clock automatically adjusts RWDS timing relative to CK, improving setup/hold margins for high-speed reads without host-side timing compensation.