Infineon Technologies S27KL0643DPBHV023

Overview

S27KL0643DPBHV023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, 1.8 V/3.0 V dual-supply support, 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters requiring deterministic latency and AEC-Q100 Grade 2 compliance (-40°C to +105°C).

For engineers reviewing the S27KL0643DPBHV023 datasheet, S27KL0643DPBHV023 pinout, S27KL0643DPBHV023 application, or S27KL0643DPBHV023 equivalent, this device delivers PSRAM functionality with xSPI command protocol, configurable burst lengths (16–128 bytes), hybrid sleep/deep power down modes, and DCARS-enabled read strobe alignment for timing margin optimization in high-speed embedded systems.

Technical Context

The S27KL0643DPBHV023 implements an octal xSPI interface with DDR signaling on DQ[7:0] and RWDS, supporting both single-ended (11-signal) and differential clock (CK/CK#, 12-signal) configurations. Its internal refresh controller autonomously manages DRAM array refresh without host intervention, enabling static RAM-like usage while retaining dynamic cell density advantages.

It supports linear and wrapped burst modes (8–64 clocks), hybrid burst (wrapped + linear), and configurable output drive strength. The DCARS feature phase-shifts RWDS by one CK edge during reads to center-align the strobe within the data eye-critical for reliable sampling at 200 MHz DDR operation.

Key Specifications

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch, RoHS-compliant, with standard ball map per Infineon datasheet Rev. *E Section 11.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0643DPBHV020, this part offers identical performance and compatibility; compared with W958D8MWYX1I, it provides higher speed, wider temperature range, DCARS timing enhancement, and drop-in replacement capability in Infineon-designated layouts.

Availability

S27KL0643DPBHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS preprocessing units, industrial HMIs, and edge AI accelerators requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle assurance.

Supply support for S27KL0643DPBHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and low-density DDR in resource-constrained embedded systems using high-speed, low-pin-count xSPI interfaces.

FAQ

What is the purpose of the RWDS signal in S27KL0643DPBHV023?

RWDS is a bidirectional strobe used to synchronize data transfers: it outputs during reads to indicate valid data windows and inputs during writes as a byte mask. With DCARS enabled, RWDS is phase-shifted by one CK edge to center-align with read data, improving timing margin at 200 MHz DDR operation-confirmed in datasheet Section 12 and timing diagrams Figure 48.

Does S27KL0643DPBHV023 require external refresh control from the host processor?

No. The device contains autonomous self-refresh logic that manages DRAM array refresh internally without host involvement. The host sees static RAM behavior, though it must observe maximum burst length limits (e.g., ≤128 bytes) to allow time for internal refresh cycles-detailed in General Description Section 1 and AC timing Table 10.4.1.

Can S27KL0643DPBHV023 operate with only single-ended clock (CK), or is differential clock (CK/CK#) mandatory?

Single-ended CK is fully supported; CK# is optional. The device operates in 11-signal mode with CK only or 12-signal mode with CK/CK#. Differential mode improves noise immunity in electrically noisy automotive environments, but design flexibility allows either configuration-specified in Signal Description Section 3.1 and Interface States Section 7.

What is the minimum VCCQ voltage required for reliable operation at 200 MHz?

Per Electrical Specifications Section 9.3.2, VCCQ must be ≥1.71 V for 1.8 V operation and ≥2.7 V for 3.0 V operation. At 200 MHz DDR, 1.8 V nominal (1.71–1.98 V range) is validated for full timing compliance including tACC ≤35 ns and setup/hold margins-see DC Characteristics Table 9.4 and AC Test Conditions Table 10.2.