Infineon Technologies S27KL0643GABHI023

Overview

S27KL0643GABHI023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V I/O, 200 MHz DDR clock, and 400 MBps data throughput. It delivers linear/wrapped burst lengths up to 128 bytes, configurable drive strength, and operates across industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S27KL0643GABHI023 datasheet, S27KL0643GABHI023 pinout, S27KL0643GABHI023 application, or S27KL0643GABHI023 equivalent, this device serves as a drop-in high-bandwidth, low-pin-count PSRAM replacement for legacy parallel SRAM or Quad SPI Flash in resource-constrained host interfaces requiring deterministic latency and partial array refresh control.

Technical Context

The S27KL0643GABHI023 implements an xSPI-compliant octal DDR interface with 11–12 signal lines (including optional CK#/RWDS), using LV-CMOS signaling and supporting both single-ended and differential clock modes. Its internal logic manages autonomous self-refresh of the 38-nm DRAM array without host intervention, while enforcing transaction-length limits to guarantee refresh timing compliance.

It supports hybrid sleep and deep power-down modes with sub-15 µA current draw at 105°C, and features DCARS (DDR center-aligned read strobe) to optimize RWDS timing alignment within the read data eye-enabling reliable high-speed reads at 200 MHz with minimal setup/hold margin requirements.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0643GABHI023, the Cypress alternative offers identical functionality and qualification, while the Winbond part trades bandwidth and timing precision for cost and footprint - making it viable only where 400 MBps throughput and DCARS-driven signal integrity are unnecessary.

Availability

S27KL0643GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI sensor nodes requiring stable component supply, AEC-Q100 Grade 3 qualification, and guaranteed long-term availability.

Supply support for S27KL0643GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ family, designed specifically to replace parallel SRAM and legacy PSRAM in space- and pin-constrained embedded systems requiring high bandwidth, low power, and simplified interface architecture.

FAQ

What voltage supplies does the S27KL0643GABHI023 require?

The device requires two independent supplies: VCC (1.7–1.95 V or 2.7–3.6 V) for the DRAM core and VCCQ (same range) for the I/O buffers. Both rails must be powered simultaneously during operation, and their voltage levels determine maximum clock rate and timing parameters per datasheet Table 9.3.2.

Does the S27KL0643GABHI023 support true hardware reset recovery?

Yes - asserting RESET# for ≥100 ns forces full internal state reset, clears configuration registers, disables all power modes, and reinitializes the DRAM array. The device exits reset in standard xSPI mode and requires a READ ID command before subsequent operations.

How does RWDS function during write transactions?

During writes, RWDS operates as an input serving as byte-level write mask: each bit corresponds to one DQ lane, enabling selective updating of individual bytes within a burst. This allows efficient partial-word writes without read-modify-write cycles, reducing bus traffic and power consumption.

Is DCARS enabled by default, and how is it configured?

DCARS is disabled by default. It is enabled by setting bit 7 of Configuration Register 2 (CR2) via WRITE ANY REGISTER command. Once enabled, RWDS transitions are phase-shifted by half a CK period relative to CK, and the host must adjust sampling timing accordingly per datasheet Section 12.3.