Infineon Technologies S27KL0643GABHV020
- Part No.:
- S27KL0643GABHV020
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S27KL0643GABHV020.pdf
- Description:
- IC PSRAM 64MBIT SPI/OCTAL 24FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,951
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Product details
Overview
S27KL0643GABHV020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, 1.8 V/3.0 V dual-supply support, 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA-5x5 package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in space-constrained embedded systems requiring seamless SRAM-like access to DRAM density.
For engineers reviewing the S27KL0643GABHV020 datasheet, S27KL0643GABHV020 pinout, S27KL0643GABHV020 application, or S27KL0643GABHV020 equivalent, key selection criteria include xSPI octal timing compliance, RWDS strobe behavior in read/write cycles, configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down current specs (12–360 µA), and AEC-Q100 Grade 2 temperature rating (−40°C to +105°C).
Technical Context
This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh without host intervention, presenting static RAM semantics to the xSPI master. Its octal DDR interface uses CK (optional CK#) and RWDS for precise data capture alignment, supporting both single-ended and differential clocking configurations.
The device implements configurable linear and wrapped burst modes (8–64 clocks), DCARS phase-shifted read strobe for eye-centering, and partial/full array refresh. Power management includes Hybrid Sleep (330 µA standby at 2.0 V) and Deep Power Down (12 µA at 2.0 V), with reset via dedicated RESET# pin and software-controlled register access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (8 MB), organized as 8,388,608 × 8-bit for direct byte-addressable access |
| Clock Rate | 200 MHz DDR - delivers 400 MBps throughput with dual-edge sampling on DQ[7:0] |
| Interface | Octal xSPI - 11–12 signal bus (CS#, CK/CK#, RWDS, DQ[7:0], RESET#) enabling compact PCB routing |
| Burst Length | Configurable: 16/32/64/128 bytes (8/16/32/64 clocks) or hybrid mode - balances latency vs. bandwidth per transaction |
| Power Modes | Hybrid Sleep (330 µA @ 2.0 V, 105°C) and Deep Power Down (12 µA @ 2.0 V, 105°C) for battery-sensitive designs |
| Operating Temp | Industrial Plus (V grade): −40°C to +105°C - qualified for extended-temperature industrial and automotive Grade 2 applications |
| Package | 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch - supports fine-pitch routing and thermal dissipation in dense layouts |
Pinout & Package
24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball grid arranged in 5×5 array (corner balls B1, E5 omitted). Package meets JEDEC MO-310 standard and supports reflow soldering per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable for all xSPI transactions; must be held high between commands to terminate bus activity |
| CK / CK# | Clock Input (single-ended or differential) | DDR timing reference; CK# optional for improved jitter margin in noisy environments |
| RWDS | Bidirectional Read/Write Data Strobe | Output during reads (data valid window indicator); input during writes (byte mask control); phase-aligned for center-sampling |
| DQ[7:0] | Octal Data I/O | 8-bit bidirectional DDR data bus; transfers two bytes per CK cycle in xSPI protocol |
| RESET# | Hardware Reset Input | Asynchronous active-low reset that clears internal state and forces re-initialization of refresh logic |
Key Features
| Feature | Design Value |
|---|---|
| Self-refresh DRAM core | On-die refresh controller eliminates host firmware overhead and timing-critical refresh scheduling |
| DCARS (DDR Center-Aligned Read Strobe) | Phase-shifted RWDS output moves transition edge into center of read data eye, improving setup/hold margin at 200 MHz |
| Configurable drive strength | Adjustable DQ/RWDS output drive reduces signal integrity issues across varied trace lengths and loads |
| Partial array refresh | Supports 1/8, 1/4, or 1/2 array refresh cycles - lowers average current during low-activity periods |
| AEC-Q100 Grade 2 qualification | Validated for automotive applications up to +105°C ambient, including engine control and ADAS subsystems |
Applications
| Automotive Instrument Clusters | Industrial HMI Panels |
|---|---|
Use Scenario: Real-time rendering of vector graphics and animated UI elements in digital dashboards with limited MCU external memory pins. IC Role / Device Role / Timing Role: PSRAM acting as frame buffer and overlay memory, interfaced via octal xSPI to reduce signal count versus parallel SRAM. Use Value: 400 MBps bandwidth sustains 60 Hz 1280×720 pixel updates; AEC-Q100 Grade 2 ensures reliability at 105°C under hood conditions. | Use Scenario: Local storage for GUI assets, configuration logs, and transient process data in programmable logic controllers with ARM Cortex-M7 hosts. IC Role / Device Role / Timing Role: High-density external memory replacing slower SPI Flash + SRAM combos, accessed via xSPI command/address/data protocol. Use Value: Wrapped burst mode (64-byte) minimizes transaction overhead; Hybrid Sleep mode cuts idle power to 330 µA for fanless enclosures. |
| Edge AI Vision Modules | Medical Portable Monitors |
Use Scenario: Buffering intermediate inference tensors and image buffers in battery-powered vision sensors running TinyML models. IC Role / Device Role / Timing Role: Low-pin-count DRAM supplementing on-chip SRAM for CNN layer activations and feature maps. Use Value: Deep Power Down current of 12 µA extends battery life between inference bursts; 200 MHz DDR enables real-time 30 fps image preprocessing. | Use Scenario: Storing waveform history, alarm event logs, and calibration tables in portable ECG/SpO₂ monitors with strict EMC and thermal constraints. IC Role / Device Role / Timing Role: Non-volatile-capable memory (with external backup) serving as reliable working memory for real-time physiological data processing. Use Value: 24-ball FBGA fits tight PCB space; 1.8 V operation reduces system-level power conversion loss and heat generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S27KS0643GABHV020 | Same die, identical pinout and xSPI timing; rebranded by Infineon post-acquisition - functionally identical | No functional difference; same AEC-Q100 Grade 2 qualification and DCARS support | Select when sourcing legacy Cypress-designated BOMs or distributor stock with original marking |
| ISSI IS66WV1288GBLL-200B3LI | Parallel QDR SRAM (128 Mbit), 200 MHz, 32-pin TSOP - higher pin count, no self-refresh, no xSPI protocol | Requires full parallel bus interface and external refresh management; unsuitable for xSPI-only hosts | Consider only for redesigns retaining legacy parallel memory interfaces and needing higher density without protocol change |
Compared with S27KL0643GABHV020, the Cypress variant offers drop-in compatibility but no technical differentiation, while the ISSI part demands significant hardware and firmware changes due to parallel interface and lack of integrated refresh - making it a non-drop-in alternative requiring full system revalidation.
Availability
S27KL0643GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI vision modules, and medical portable monitors requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for S27KL0643GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT applications.
The HYPERRAM™ product line delivers high-speed, low-pin-count PSRAMs optimized for microcontroller-based systems needing DRAM density with SRAM simplicity and xSPI interoperability.
FAQ
Does S27KL0643GABHV020 require external refresh control from the host processor?
No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host only issues standard xSPI commands; no refresh cycles, timing windows, or scheduling are required. This enables true SRAM-like usage with no firmware overhead.
What is the purpose of the RWDS signal, and how does it behave during write operations?
RWDS is bidirectional: it outputs a read data strobe aligned to data eye center during reads, and accepts a write data mask during writes. In write mode, each RWDS pulse masks one byte of DQ[7:0], allowing selective byte programming without read-modify-write sequences - critical for efficient register or packet-based updates.
Can S27KL0643GABHV020 operate with only single-ended clock (CK), or is differential clocking (CK/CK#) mandatory?
Single-ended clocking using CK only is fully supported and default. CK# is optional and used only when improved jitter immunity is needed in electrically noisy environments. The device automatically detects presence of CK# and configures internal termination accordingly - no register setting required.
How does the DCARS (DDR Center-Aligned Read Strobe) functionality improve timing margin?
DCARS shifts the RWDS output edge by half a clock period relative to CK, positioning the strobe transition precisely at the center of the read data eye. This maximizes setup and hold time margins at 200 MHz DDR, reducing timing closure risk on FR4 PCBs with moderate trace skew - especially beneficial for high-volume consumer and industrial designs.
S27KL0643GABHV020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8
- Memory Interface:
- SPI - Octal I/O
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S27KL0643GABHV020 FAQ
1.How can I place an order for S27KL0643GABHV020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S27KL0643GABHV020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S27KL0643GABHV020 reliable?
The price and inventory of S27KL0643GABHV020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0643GABHV020 is usually 5 days.
3.What payment methods are accepted for S27KL0643GABHV020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0643GABHV020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S27KL0643GABHV020?
S27KL0643GABHV020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S27KL0643GABHV020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S27KL0643GABHV020?
For technical support, including S27KL0643GABHV020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0643GABHV020 requirements.
6.How does Aetrix verify that S27KL0643GABHV020 is sourced from the original manufacturer or authorized distributors?
All S27KL0643GABHV020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0643GABHV020 meets industry standards.
7.What is the process for return or replacement of S27KL0643GABHV020?
All S27KL0643GABHV020 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0643GABHV020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S27KL0643GABHV020 part is unused and in its original packaging.
Return procedure for S27KL0643GABHV020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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