Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies S27KL0643GABHV023

Part No.:
S27KL0643GABHV023
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS27KL0643GABHV023.pdf
Description:
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,987

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

S27KL0643GABHV023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, 1.8 V/3.0 V dual-supply support, 200 MHz DDR clock, and 24-ball FBGA package. It delivers up to 400 MBps throughput, supports linear/wrapped burst lengths (16–128 bytes), and operates across industrial temperature range (–40°C to +105°C). Used in embedded microcontroller systems requiring high-bandwidth, low-pin-count external memory with SRAM-like ease of use.

For engineers reviewing the S27KL0643GABHV023 datasheet, S27KL0643GABHV023 pinout, S27KL0643GABHV023 application, or S27KL0643GABHV023 equivalent, key selection criteria include xSPI octal DDR timing compliance, RWDS strobe behavior, configurable burst mode, hybrid sleep/deep power down current specs (12 µA at 1.8 V), and AEC-Q100 Grade 2 qualification for automotive edge computing.

Technical Context

This PSRAM integrates DRAM array refresh control logic that autonomously manages partial/full array refresh without host intervention-enabling SRAM-like command interface over xSPI. Its octal DDR interface uses CK/RWDS synchronization with optional differential CK# and DCARS phase-shifted read strobe for timing margin optimization in high-speed layouts.

The device implements 16-bit command encoding (dual 8-bit opcodes on each CK edge), supports register-based configuration of drive strength, burst type, and power modes, and enforces transaction-level access latency when internal refresh is pending-requiring host firmware to respect tACC (35 ns) and initial read latency indicators via RWDS.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (8 MB) pseudo-static RAM with self-refresh DRAM core
Clock RateUp to 200 MHz DDR - enables 400 MBps peak data throughput
InterfaceOctal xSPI - 11–12 signal count (CK/CK#, CS#, DQ[7:0], RWDS, RESET#)
Supply Voltage1.8 V or 3.0 V VCC/VCCQ - dual-voltage I/O and core support
Burst LengthConfigurable: 16/32/64/128 bytes (8/16/32/64 clocks) or hybrid wrapped+linear
Power ModesHybrid Sleep (330 µA @ 1.8 V) and Deep Power Down (12 µA @ 1.8 V)
Operating Temp–40°C to +105°C (Industrial Plus / AEC-Q100 Grade 2)

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package footprint matches JEDEC MO-270AC standard.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip SelectActive-low enable for all xSPI transactions; must be held high between operations
CK / CK#Clock InputSingle-ended (CK only) or differential (CK/CK#) DDR clock source; defines all data edges
RWDSRead-Write Data StrobeBidirectional: output during reads (data valid indicator), input during writes (mask signal); also signals refresh latency at transaction start
DQ[7:0]Data BusOctal bidirectional data lines; transfers two 8-bit nibbles per CK cycle in DDR mode
RESET#Hardware ResetAsynchronous active-low reset; forces device into known state and clears internal registers

Key Features

FeatureDesign Value
Self-Refresh DRAM CoreEliminates external refresh controller; host sees SRAM-like interface while internal logic schedules partial/full array refreshes autonomously
DCARS Read StrobePhase-shifted RWDS offset by one CK edge improves read data eye alignment in high-speed PCB layouts
Configurable Drive StrengthAdjustable output drive on DQ/RWDS pins reduces signal integrity issues across varied trace lengths and loads
Hybrid Burst ModeCombines wrapped burst (for cache-line efficiency) followed by linear burst (for sequential streaming), optimizing bandwidth per transaction
AEC-Q100 Grade 2Qualified for automotive applications up to +105°C ambient, supporting ADAS and infotainment SoC offload memory

Applications

Automotive ADAS Camera BufferIndustrial HMI Frame Buffer

Use Scenario: Real-time buffering of 1080p60 image frames from MIPI CSI-2 receivers before GPU processing.

IC Role / Device Role / Timing Role: Off-chip PSRAM providing low-latency, high-throughput frame storage with deterministic tACC (35 ns) and burst-aligned access.

Use Value: Enables zero-copy frame handoff using 128-byte wrapped bursts, reducing CPU overhead and eliminating external refresh management.

Use Scenario: Storing dynamic UI assets (fonts, icons, rendered widgets) in PLC touch panels operating continuously at 85°C ambient.

IC Role / Device Role / Timing Role: High-reliability external memory with AEC-Q100 Grade 2 rating and deep power down (12 µA) for energy-constrained edge HMIs.

Use Value: Maintains data retention during extended standby while supporting fast wake-up via xSPI command-driven resume.

Edge AI Inference ScratchpadWireless Gateway Packet Buffer

Use Scenario: Temporary tensor scratchpad for lightweight neural network inference on Cortex-M7/M33 microcontrollers.

IC Role / Device Role / Timing Role: Low-pin-count external memory interfaced via xSPI to avoid multiplexing GPIOs; supports hybrid burst for irregular memory access patterns.

Use Value: Doubles effective bandwidth vs quad-SPI while maintaining MCU firmware compatibility through standardized xSPI command set.

Use Scenario: Deep packet buffering in 802.11ax/Wi-Fi 6 gateways handling concurrent VoIP, video, and IoT traffic streams.

IC Role / Device Role / Timing Role: High-throughput, low-power buffer with configurable drive strength to match varying PHY trace impedances.

Use Value: Achieves 400 MBps sustained write/read with DCARS-assisted timing margin, reducing packet loss under thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S27KS0643GABHV020Same die, identical pinout and xSPI command set; differs only in ordering code suffix and tape/reel packagingNo functional difference; validated for same automotive and industrial use casesSelect when sourcing from legacy Cypress channel or requiring specific reel size
ISSI IS66WV12816EBLL-100B3LIParallel-interface 2MB SRAM (not PSRAM); no self-refresh, no xSPI, 100 MHz async interface, higher pin count (48-pin TSOP)Requires full parallel bus allocation and external refresh logic; unsuitable for space-constrained xSPI designsOnly viable if system lacks xSPI controller but has spare GPIOs and needs guaranteed static retention without refresh latency

Compared with S27KS0643GABHV020, this part offers identical functionality with updated Infineon branding and lifecycle support; versus IS66WV12816EBLL-100B3LI, it trades pin count and static guarantee for xSPI integration, bandwidth, and power efficiency in modern embedded SoCs.

Availability

S27KL0643GABHV023 is available at Aetrix Electronics and suitable for automotive ADAS camera buffers, industrial HMI frame buffers, and edge AI inference scratchpads requiring stable component supply, AEC-Q100 qualification, and long-term industrial temperature operation.

Supply support for S27KL0643GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S27KL0643GABHV023 belongs to the HYPERRAM™ PSRAM product line, designed specifically to replace parallel SRAM and low-density DDR in resource-constrained embedded systems needing high bandwidth, low pin count, and simplified memory subsystem design.

FAQ

Does S27KL0643GABHV023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. Host controllers interact with it using standard xSPI commands and do not need to issue refresh cycles or track refresh timing-making it functionally equivalent to SRAM in software interface.

What is the purpose of the RWDS signal beyond data strobing?

RWDS serves three roles: (1) indicates read data validity during reads, (2) acts as write mask during writes, and (3) pulses at the start of every transaction to signal pending internal refresh latency-requiring the host to insert additional wait states before accessing data.

Can S27KL0643GABHV023 operate at 1.8 V and 3.0 V simultaneously?

No. VCC (core) and VCCQ (I/O) must be supplied at the same nominal voltage: either both at 1.8 V or both at 3.0 V. Mixed-supply operation is not supported and violates absolute maximum ratings per the datasheet.

Is DCARS functionality enabled by default?

DCARS is disabled by default. It must be activated by setting bit 7 of Configuration Register 2 (CR2) via WRITE ANY REGISTER command. Once enabled, RWDS transitions align to the phase-shifted clock edge during reads, improving setup/hold margins in high-speed layouts.

S27KL0643GABHV023 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™ KL
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
64Mbit
Memory Organization:
8M x 8
Memory Interface:
SPI - Octal I/O
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S27KL0643GABHV023 FAQ

1.How can I place an order for S27KL0643GABHV023 through Aetrix?

Please submit a Request for Quotation (RFQ) for S27KL0643GABHV023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S27KL0643GABHV023 reliable?

The price and inventory of S27KL0643GABHV023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0643GABHV023 is usually 5 days.

3.What payment methods are accepted for S27KL0643GABHV023?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0643GABHV023 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S27KL0643GABHV023?

S27KL0643GABHV023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S27KL0643GABHV023 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S27KL0643GABHV023?

For technical support, including S27KL0643GABHV023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0643GABHV023 requirements.

6.How does Aetrix verify that S27KL0643GABHV023 is sourced from the original manufacturer or authorized distributors?

All S27KL0643GABHV023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0643GABHV023 meets industry standards.

7.What is the process for return or replacement of S27KL0643GABHV023?

All S27KL0643GABHV023 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0643GABHV023, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S27KL0643GABHV023 part is unused and in its original packaging.

Return procedure for S27KL0643GABHV023:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

S27KL0643GABHV023 Tags

  • S27KL0643GABHV023
  • S27KL0643GABHV023 PDF
  • S27KL0643GABHV023 Datasheet
  • S27KL0643GABHV023 Specifications
  • S27KL0643GABHV023 Images
  • Infineon Technologies
  • Infineon Technologies S27KL0643GABHV023
  • Buy S27KL0643GABHV023
  • S27KL0643GABHV023 Price
  • S27KL0643GABHV023 Distributor
  • S27KL0643GABHV023 Supplier
  • S27KL0643GABHV023 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER