Infineon Technologies S27KS0641DPBHB023

Overview

S27KS0641DPBHB023 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing for read data eye alignment, and integrates on-die refresh control to emulate PSRAM behavior in microcontroller-based systems requiring high-bandwidth external memory.

For engineers reviewing the S27KS0641DPBHB023 datasheet, S27KS0641DPBHB023 pinout, S27KS0641DPBHB023 application, or S27KS0641DPBHB023 equivalent, key selection criteria include its 24-ball FBGA package, 1.8 V I/O compatibility, RWDS-driven latency signaling, configurable burst lengths (16–128 bytes), and Deep Power Down current of 20 µA at 1.8 V - critical for low-power HMI and edge AI inference accelerators.

Technical Context

This HyperRAM device implements a DDR-based HyperBus interface with center-aligned command/address transfers and edge-aligned read data synchronized to RWDS transitions. Its internal refresh controller eliminates host-managed refresh cycles, enabling seamless integration with MCU or FPGA masters lacking DRAM timing controllers.

The DCARS (DDR Center-Aligned Read Strobe) architecture uses a phase-shifted clock derived from CK to position RWDS edges within the read data eye, ensuring reliable capture at 166 MHz. Burst transactions support dynamic selection between wrapped (cache-line fill) and linear (graphics buffer) modes per command, with initial latency signaled via RWDS during CA transfer.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball-out optimized for signal integrity and thermal dissipation in space-constrained embedded applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-refresh DRAM applications.

Compared with IS66WV12816EBLL-15BLI and S27KL0641DPBHB020, the S27KS0641DPBHB023 offers superior power efficiency and interface simplicity for new designs targeting 1.8 V ecosystems, while maintaining identical memory density and HyperBus protocol compatibility.

Availability

S27KS0641DPBHB023 is available at Aetrix Electronics and suitable for automotive digital clusters, industrial HMI displays, and edge AI inference accelerators requiring stable component supply, long-term lifecycle assurance, and qualified sourcing for production ramp.

Supply support for S27KS0641DPBHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This part belongs to the HyperRAM™ product line, designed specifically to bridge the performance gap between serial NOR flash and parallel DRAM by delivering DDR bandwidth with PSRAM-like ease of use in resource-constrained embedded systems.

FAQ

What is the maximum supported clock frequency for S27KS0641DPBHB023?

The device supports up to 166 MHz DDR clock frequency at 1.8 V VCCQ, delivering 333 MBps peak bandwidth. This rating is validated across commercial temperature range (–40 °C to +85 °C) and requires proper termination and layout per Infineon's HyperBus design guidelines. Operation above this frequency violates AC timing specifications and may cause data corruption.

Does S27KS0641DPBHB023 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that maintains data integrity without host intervention. Refresh cycles occur transparently during idle periods or transaction gaps, making it functionally equivalent to PSRAM for software and driver development - no refresh registers or timing-critical host scheduling is needed.

Can RWDS be used as a dedicated read strobe without masking functionality?

Yes. During read transactions, RWDS operates exclusively as a source-synchronous read data strobe with edge-aligned transitions. Its masking function is inactive in read mode. The same physical signal serves dual roles: output-only latency indicator/strobe in reads, and bidirectional strobe/mask in writes - automatically managed by internal state machine based on transaction type.

Is S27KS0641DPBHB023 pin-compatible with S27KL0641DPBHB020?

Yes - both share identical 24-ball FBGA package, pinout, and mechanical footprint. However, they differ electrically: S27KS0641DPBHB023 uses 1.8 V I/O (VCCQ), while S27KL0641DPBHB020 uses 3.0 V I/O. Direct substitution requires matching the host's I/O voltage rail and verifying timing margins at the lower voltage.