Infineon Technologies S27KS0641DPBHI020

Overview

S27KS0641DPBHI020 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing for read data eye alignment, and integrates on-die refresh control to emulate PSRAM behavior in embedded systems requiring low-pin-count high-bandwidth memory.

For engineers reviewing the S27KS0641DPBHI020 datasheet, S27KS0641DPBHI020 pinout, S27KS0641DPBHI020 application, or S27KS0641DPBHI020 equivalent, key selection criteria include HyperBus signal count reduction (12-pin interface), configurable burst length (16–128 bytes), deep power-down current (20 µA @ 1.8 V), and support for wrapped/linear/hybrid burst modes in real-time display and graphics buffering applications.

Technical Context

This device implements a DDR HyperBus interface with center-aligned command/address transfers and edge-aligned read data strobed by RWDS. Its internal refresh controller eliminates host-managed refresh cycles, enabling seamless integration as pseudo-static RAM while retaining DRAM density advantages.

The DCARS (DDR Center-Aligned Read Strobe) function uses a phase-shifted clock derived from CK to position RWDS transitions precisely within the read data eye-critical for reliable high-speed sampling at 166 MHz. Burst transactions are fully configurable per-command: wrapped (cache-line fill), linear (frame buffer), or hybrid (first wrapped then linear).

Key Specifications

Pinout & Package

24-ball FBGA package with 0.8 mm ball pitch and 5 mm × 5 mm body size. Pin assignments conform to HyperBus standard layout for interoperability across HyperRAM generations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus DRAM applications.

Compared with S27KS0641DPBHI020, S27KL0641DPBHI020 offers identical performance in a functionally equivalent package, while S70KS1281DPBHI020 doubles capacity with no interface or timing penalty-enabling scalable memory design without re-spinning HyperBus routing.

Availability

S27KS0641DPBHI020 is available at Aetrix Electronics and suitable for automotive digital clusters, industrial HMIs, smart home gateways, and medical patient monitors requiring stable component supply and long-term lifecycle support.

Supply support for S27KS0641DPBHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This part belongs to the HyperRAM™ product line-designed specifically to replace parallel NOR/NAND and legacy PSRAM in bandwidth-constrained embedded systems where pin count, power, and deterministic timing are critical.

FAQ

Is S27KS0641DPBHI020 pin-compatible with S27KL0641DPBHI020?

Yes-both share identical 24-ball FBGA mechanical footprint, pin assignment, and electrical characteristics. The "S" and "L" suffixes denote identical silicon die; differences are limited to ordering nomenclature and internal manufacturing lot tracking. No PCB or firmware changes are required for substitution.

Does this device require external refresh management from the host processor?

No. S27KS0641DPBHI020 contains an integrated self-refresh controller that autonomously executes all necessary DRAM refresh cycles. The host only issues HyperBus commands; refresh operations occur transparently during idle periods or with minimal latency insertion signaled via RWDS.

What is the purpose of the RWDS signal during write transactions?

During writes, RWDS acts as a per-byte write mask: HIGH disables writing to the corresponding DQ[7:0] byte, LOW enables it. This enables precise byte-level merging of non-aligned data-e.g., updating individual fields in a structure without reading-modify-write cycles-and supports partial-word DMA transfers.

Can S27KS0641DPBHI020 operate with a single-ended clock instead of differential CK/CK#?

No-this specific variant (PBHI020 suffix) is specified for 1.8 V operation with differential clock input only. Single-ended clock support is available only in 3.0 V variants (e.g., S27KS0641DHBHI020), which use CK-only and 11-signal interface. Mixing clock configurations violates AC timing specifications.