Infineon Technologies S27KS0641DPBHI023

Overview

S27KS0641DPBHI023 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing for read data eye alignment, and integrates on-die refresh control to emulate PSRAM behavior in microcontroller-based embedded systems.

For engineers reviewing the S27KS0641DPBHI023 datasheet, S27KS0641DPBHI023 pinout, S27KS0641DPBHI023 application, or S27KS0641DPBHI023 equivalent, key selection criteria include HyperBus signal count reduction (12-pin interface), self-refresh latency handling via RWDS, configurable burst lengths (16–128 bytes), DCARS phase-shifted strobe alignment, and FBGA-24 package compatibility with high-density PCB layouts.

Technical Context

This device implements a DDR HyperBus interface with command/address/data multiplexing over DQ[7:0], using CK/CK# for synchronous capture and RWDS for source-synchronous read strobe and write mask signaling. Its internal refresh controller eliminates host-managed refresh cycles, enabling seamless integration into resource-constrained MCUs.

The DCARS (DDR Center-Aligned Read Strobe) architecture shifts RWDS phase relative to CK to center transitions within the read data eye-critical for reliable high-speed sampling at 166 MHz. Burst transactions support dynamic selection between wrapped (cache-line fill) and linear (graphics buffer) modes per access, with initial latency indicated by RWDS during CA transfer.

Key Specifications

Pinout & Package

Package: 24-ball Fine-Pitch Ball Grid Array (FBGA), 5 mm × 5 mm body, 0.8 mm ball pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus-compatible DRAM applications.

Compared with S27KS0641DPBHI023, the S27KL0641DPBHI020 offers identical functionality at lower cost but excludes automotive qualification, while the S70KS1281DPBHI020 doubles capacity in the same footprint-enabling scalable memory design without PCB redesign.

Availability

S27KS0641DPBHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, portable medical monitors, and smart home gateways requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle support.

Supply support for S27KS0641DPBHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This part belongs to Infineon's HyperRAM™ product line, engineered to replace legacy PSRAM and low-density LPDDR in MCU-centric designs where low pin count, deterministic latency, and self-refresh simplicity are critical.

FAQ

What is the purpose of the RWDS signal in S27KS0641DPBHI023?

RWDS serves three distinct roles: (1) outputting initial latency indication during command/address transfer, (2) acting as edge-aligned read data strobe during read bursts, and (3) functioning as byte-level write mask during write bursts. Its bidirectional nature eliminates need for separate strobe and mask lines, reducing interface complexity while maintaining precise timing control at 166 MHz DDR rates.

Does S27KS0641DPBHI023 require external refresh circuitry?

No. The device contains fully autonomous on-die refresh logic that executes background refresh cycles without host intervention. The HyperBus interface presents it as a pseudo-static RAM (PSRAM), meaning the host MCU only issues standard read/write commands-no refresh commands, timers, or scheduling logic are required in firmware or hardware.

How does DCARS improve timing margin in high-speed reads?

DCARS generates a phase-shifted version of the CK signal to drive RWDS transitions, positioning its edges precisely at the center of the read data eye. This compensates for skew between clock and data paths, increasing setup/hold margins by up to 150 ps compared to fixed-phase strobes-enabling robust 166 MHz operation across voltage and temperature extremes.

Can S27KS0641DPBHI023 operate with a single 1.8 V supply?

Yes. The device uses a unified 1.8 V supply for both VCC (core) and VCCQ (I/O), eliminating need for dual-rail power design. All I/Os are LV-CMOS compatible at 1.8 V, and internal regulators ensure stable core voltage-simplifying power delivery and reducing BOM count in space-constrained embedded systems.