Infineon Technologies S27KS0641DPBHV023

Overview

S27KS0641DPBHV023 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers up to 333 MBps throughput at 166 MHz DDR, features DCARS timing for read data eye alignment, and integrates on-die refresh control to emulate PSRAM behavior in embedded systems requiring low-pin-count high-bandwidth memory.

For engineers reviewing the S27KS0641DPBHV023 datasheet, S27KS0641DPBHV023 pinout, S27KS0641DPBHV023 application, or S27KS0641DPBHV023 equivalent, key selection criteria include HyperBus interface compatibility, 1.8 V I/O voltage requirement, 24-ball FBGA package footprint, DCARS-enabled read strobe timing, and support for wrapped/linear burst configurations in real-time display and graphics subsystems.

Technical Context

This device implements a DDR HyperBus interface with six-byte command/address transfers, center-aligned clock capture, and RWDS-driven initial latency signaling. It uses internal self-refresh logic to eliminate host-managed refresh cycles while maintaining DRAM density advantages.

The HyperRAM architecture supports dynamic burst type selection per transaction-wrapped bursts for cache-line fills (e.g., 16–128 byte lengths), linear bursts for sequential image buffers-and configurable output drive strength to match PCB trace impedance and signal integrity requirements.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with exposed thermal pad (VSS). Pin assignments conform to HyperBus specification for 1.8 V operation with differential clock inputs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus-compatible memory applications.

Compared with S27KL0641DPBHV020, S27KS0641DPBHV023 adds AEC-Q100 qualification and extended temperature tolerance, while S70KS1281DPBHV020 doubles capacity within the same footprint-enabling scalable memory architecture without changing PCB layout or driver software.

Availability

S27KS0641DPBHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, medical imaging terminals, and smart home control panels requiring stable component supply across long product lifecycles.

Supply support for S27KS0641DPBHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for automotive, industrial, and IoT applications.

This part belongs to the HyperRAM™ product line, designed specifically to bridge the performance-cost gap between SRAM and DRAM in resource-constrained embedded systems requiring high-speed, low-pin-count memory expansion.

FAQ

Is S27KS0641DPBHV023 pin-compatible with S27KL0641DPBHV020?

Yes, both parts share identical 24-ball FBGA package, pinout, and HyperBus interface signals. The primary difference lies in temperature rating and qualification: S27KS0641DPBHV023 is AEC-Q100 qualified for automotive use (–40°C to +105°C), while S27KL0641DPBHV020 is rated for industrial temperatures (–40°C to +85°C) without automotive certification.

Does this device require external refresh circuitry?

No. S27KS0641DPBHV023 integrates self-refresh logic that automatically manages DRAM cell refresh during idle periods. The host processor interacts with it as a pseudo-static RAM-no refresh commands, timers, or scheduling are needed from the system software or memory controller.

What is the role of RWDS in read versus write transactions?

In read transactions, RWDS acts first as an initial latency indicator, then as a source-synchronous read data strobe edge-aligned with data. In write transactions, RWDS functions as a per-byte write mask: HIGH prevents the corresponding DQ byte from being written, enabling precise byte-level merging without read-modify-write cycles.

Can this part operate with a single-ended clock?

No. S27KS0641DPBHV023 requires differential clock inputs (CK and CK#) as specified in its ordering code "DPBH" variant. Single-ended clock support is only available in the "LPBH" (3.0 V I/O) or "SPBH" (1.8 V I/O, single-ended CK) variants-not this part number.