Infineon Technologies S27KS0642GABHA020

Overview

S27KS0642GABHA020 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used as high-bandwidth external memory for microcontrollers in automotive instrument clusters.

For engineers reviewing the S27KS0642GABHA020 datasheet, S27KS0642GABHA020 pinout, S27KS0642GABHA020 application, or S27KS0642GABHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment support, DCARS capability, VCC/VCCQ voltage configuration, and AEC-Q100 grade 3 qualification for automotive embedded systems.

Technical Context

The device implements a DDR HYPERBUS™ interface with 8-bit DQ bus, single-ended or optional differential clock (CK/CK#), and bidirectional RWDS used as read data strobe, write data mask, and refresh latency indicator. All command/address/data transfers occur over the same DQ[7:0] lines using time-multiplexed 6-byte CA sequences.

Internal refresh logic autonomously manages DRAM cell retention without host intervention, enabling PSRAM-like operation. Refresh is suspended during active transactions, requiring host-enforced burst length limits and initial latency tolerance-up to 35 ns tACC at 1.8 V and 200 MHz operation.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642GABHI020, the S27KS0642GABHA020 trades extended temperature rating for lower cost and tighter supply chain alignment with Grade 3 automotive programs; versus ISSI's SRAM, it delivers 2.7× higher bandwidth in half the pin count but requires HYPERBUS™-capable host controller support.

Availability

S27KS0642GABHA020 is available at Aetrix Electronics and suitable for digital instrument clusters, automotive head-up displays, infotainment application processor expansion, and ADAS camera preprocessing buffers requiring stable component supply across automotive production lifecycles.

Supply support for S27KS0642GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, radar sensors, and memory solutions for industrial and automotive markets.

This part belongs to the HYPERRAM™ product line, designed specifically to deliver high-bandwidth, low-pin-count external memory for resource-constrained automotive and industrial microcontrollers needing SRAM-like simplicity with DRAM density.

FAQ

Does S27KS0642GABHA020 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that maintains DRAM cell charge without host intervention. The host only needs to observe maximum burst duration limits and initial latency indications via RWDS to accommodate internal refresh cycles - no refresh commands or timing control are required from the controller.

What is the role of RWDS in write transactions?

During write operations, RWDS functions as a byte-level write mask: each rising edge corresponds to one DQ[7:0] byte transfer, and its assertion enables writing to the targeted memory location. When deasserted, that byte is masked and remains unmodified - enabling partial writes without read-modify-write overhead.

Can S27KS0642GABHA020 operate with only single-ended clock (CK) instead of differential (CK/CK#)?

Yes. The device supports both configurations: single-ended CK (11-signal mode) or differential CK/CK# (12-signal mode). Differential mode improves noise immunity and timing margin at 200 MHz, especially in electrically noisy automotive environments, but single-ended operation is fully functional and validated per datasheet AC specs.

Is DCARS functionality enabled by default?

No. DCARS must be activated via Configuration Register 1 (CR1[1]) during initialization. When enabled, RWDS transitions are phase-shifted by one-half clock cycle relative to CK, centering the strobe edge within the read data eye - critical for robust operation at maximum 200 MHz frequency with longer PCB traces.