Infineon Technologies S27KS0642GABHA023

Overview

S27KS0642GABHA023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory without host-managed refresh.

For engineers reviewing the S27KS0642GABHA023 datasheet, S27KS0642GABHA023 pinout, S27KS0642GABHA023 application, or S27KS0642GABHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read eye optimization, partial array refresh configuration, hybrid sleep mode current (360 µA standby), and FBGA-24 mechanical compatibility with PCB layout constraints.

Technical Context

This PSRAM integrates DRAM array with on-die refresh controller and HYPERBUS™ protocol logic, enabling static RAM-like interface abstraction over dynamic memory. It uses center-aligned command/address transmission and edge-aligned DDR data transfers on DQ[7:0], with RWDS serving dual roles: initial latency indicator and read/write strobe/mask.

The device supports both single-ended (CK) and optional differential (CK/CK#) clocking, and includes DCARS mode for phase-shifted RWDS to improve read data sampling margin. Configuration registers control burst type (linear/wrapped), drive strength, and power modes including deep power-down (12 µA at 2.0 V).

Key Specifications

Pinout & Package

Package: 24-ball Fine-Pitch Ball Grid Array (FBGA), 5 mm × 5 mm body, 0.8 mm ball pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHA023, the S27KL0642GABHA020 offers identical performance but legacy branding, while S27KS0642GABHA020 provides identical function with updated manufacturing traceability - both eliminate redesign risk in volume production.

Availability

S27KS0642GABHA023 is available at Aetrix Electronics and suitable for industrial HMI, automotive instrument clusters, edge AI sensor hubs, and portable medical monitors requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S27KS0642GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and wafer fabrication infrastructure.

This device belongs to the HYPERRAM™ family, designed specifically to replace parallel NOR/NAND and pseudo-SRAM in resource-constrained embedded systems needing high bandwidth with minimal pin count and simplified memory controller logic.

FAQ

What is the minimum supported clock frequency for S27KS0642GABHA023?

The device does not specify a minimum clock frequency; it supports DC operation in active mode and clock-stop in hybrid sleep mode. Functional operation begins at any frequency ≥0 MHz with valid setup/hold timing met. Typical system use starts at 50 MHz for low-power configurations, but no lower bound is enforced by specification.

Does S27KS0642GABHA023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods or hybrid sleep mode. The host processor never issues refresh commands - the memory appears as static RAM to software and hardware interfaces.

Can RWDS be used as a dedicated read strobe without write masking function?

No. RWDS is inherently bidirectional and functionally shared: it outputs initial latency and read strobe edges, and inputs write mask bits during write transactions. Its direction is controlled automatically by the internal state machine; no configuration disables write masking.

Is DCARS mode enabled by default after power-up?

No. DCARS is disabled by default. It must be explicitly enabled via Configuration Register 1 (bit CR1[3]), and requires corresponding RWDS timing adjustments in the host controller. Default operation uses standard edge-aligned RWDS for backward compatibility with existing HYPERBUS™ masters.