Infineon Technologies S27KS0642GABHB023

Overview

S27KS0642GABHB023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory without host-managed refresh.

For engineers reviewing the S27KS0642GABHB023 datasheet, S27KS0642GABHB023 pinout, S27KS0642GABHB023 application, or S27KS0642GABHB023 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS phase alignment for read eye optimization, burst configuration register settings, and hybrid sleep/deep power-down current specs under 1.8 V/3.0 V supply conditions.

Technical Context

The device implements a self-refresh DRAM core with integrated refresh controller, presenting static RAM behavior to the host despite dynamic cell architecture. All refresh operations occur autonomously during idle intervals between HYPERBUS™ transactions, eliminating host refresh overhead.

HYPERBUS™ interface uses single-ended or optional differential clock (CK/CK#), 11–12 signal count, and LV-CMOS I/O. RWDS serves dual roles: initial latency indicator at transaction start and edge-aligned read/write strobe-optionally enhanced via DDR center-aligned read strobe (DCARS) for improved timing margin in high-speed reads.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball map defined per Infineon datasheet Rev. *I, page 49–50. Pin functions validated against official signal description table (Section 3.1, page 9).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642GABHI020 and S27KS0642GABHB020, the S27KS0642GABHB023 offers identical memory performance and HYPERBUS™ interoperability but targets standard industrial temperature range and medium-volume reel packaging-making it optimal for cost-sensitive, volume OEM designs with verified thermal margins.

Availability

S27KS0642GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI accelerators, and medical patient monitors requiring stable component supply across multi-year production cycles.

Supply support for S27KS0642GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace legacy SRAM and NOR flash in bandwidth-constrained, pin-limited embedded systems while delivering DRAM-level density and cost efficiency.

FAQ

Does S27KS0642GABHB023 require external refresh circuitry or host software intervention?

No. The device integrates autonomous self-refresh logic that executes array refresh during idle periods between HYPERBUS™ transactions. Host systems access it as a static memory-no refresh commands, timers, or firmware overhead are required. Refresh timing and scheduling are fully internal and transparent to the controller.

What is the role of RWDS in write transactions, and how does it differ from read mode?

In write transactions, RWDS functions as a write data mask input, allowing selective byte enabling on the DQ[7:0] bus. During reads, RWDS is driven by the device as a strobe aligned to data edges. This dual-mode operation is hardware-controlled and requires no mode register setting-the direction is determined by transaction type (CA[5:0] = 0x02 for write, 0x03 for read).

Can S27KS0642GABHB023 operate with only single-ended clock (CK), or is differential clock (CK/CK#) mandatory?

Single-ended clock (CK only) is fully supported and commonly used. Differential clock (CK/CK#) is optional and improves noise immunity in electrically noisy environments. Both modes use identical timing parameters and register configurations; no hardware or firmware changes are needed when switching between them.

How does partial array refresh affect power consumption and data retention reliability?

Partial array refresh reduces active current by limiting refresh to 1/8, 1/4, or 1/2 of the memory array per cycle, lowering average power by up to 50% during light-traffic operation. Data retention remains guaranteed per JEDEC JESD22-A117 for all configured refresh fractions, with no impact on MTBF or error rates under specified temperature and voltage conditions.