Infineon Technologies S27KS0642GABHI020

Overview

S27KS0642GABHI020 from Infineon Technologies is a 64 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput in industrial temperature range (–40°C to +85°C), used as high-bandwidth, low-pin-count external memory for microcontrollers in automotive instrument clusters.

For engineers reviewing the S27KS0642GABHI020 datasheet, S27KS0642GABHI020 pinout, S27KS0642GABHI020 application, or S27KS0642GABHI020 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS-driven read latency handling, burst length configurability (16–128 bytes), and hybrid sleep/deep power-down mode support for embedded real-time systems.

Technical Context

The device implements a self-refresh DRAM array with integrated refresh control logic, eliminating host-managed refresh cycles while maintaining static RAM-like interface behavior. It uses LV-CMOS signaling on an 8-bit DQ bus with bidirectional RWDS for read-data strobe and write-data mask functions, and supports both single-ended (11-signal) and optional differential clock (12-signal) HYPERBUS™ configurations.

Command, address, and data share the same DQ[7:0] lines in time-multiplexed fashion; all transactions begin with CS# assertion followed by six CA bytes. Initial access latency (tACC = 35 ns max) and configurable wrapped/linear burst modes enable deterministic timing for real-time MCU interfacing without external refresh arbitration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHI020, the Cypress variant offers identical performance with legacy documentation, while the ISSI SRAM trades bandwidth and integration for simpler timing but increases system footprint and power in active use.

Availability

S27KS0642GABHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI sensor hubs, and medical patient monitor interfaces requiring stable component supply across extended product lifecycles.

Supply support for S27KS0642GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and NOR flash in MCU-based systems where high bandwidth, low pin count, and embedded self-refresh are critical.

FAQ

What is the function of the RWDS signal in S27KS0642GABHI020?

RWDS is a bidirectional signal that serves dual roles: during read transactions, it outputs a strobe aligned with the first data byte to indicate valid read window timing; during write transactions, it acts as a byte-level mask input to selectively update DQ[7:0] lanes. Its phase relationship with CK is configurable via DCARS to optimize timing margins at 200 MHz DDR.

Does S27KS0642GABHI020 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that manages DRAM array refresh without host intervention. The MCU sees it as a static RAM - no refresh commands, timers, or hidden latency penalties are required. Refresh occurs transparently during idle periods or via partial-array cycles triggered internally.

Can S27KS0642GABHI020 operate at both 1.8 V and 3.0 V simultaneously?

No. VCC (core array) and VCCQ (I/O buffer) must be supplied at the same nominal voltage: either both at 1.8 V or both at 3.0 V. The device does not support mixed-voltage operation. Voltage selection is fixed per ordering part number and cannot be dynamically switched in-system.

How is burst length configured in S27KS0642GABHI020?

Burst length is set via Configuration Register 0 (CR0), bits [11:10], which select wrapped burst sizes of 16, 32, 64, or 128 bytes. Linear burst mode is enabled by clearing CR0[12]. These registers are accessed through HYPERBUS™ command sequences (0x00–0x0F), not dedicated pins, allowing runtime reconfiguration without hardware changes.