Infineon Technologies S27KS0642GABHI023

Overview

S27KS0642GABHI023 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial temperature range (−40°C to +85°C) in 24-ball FBGA package. Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory without host-managed refresh.

For engineers reviewing the S27KS0642GABHI023 datasheet, S27KS0642GABHI023 pinout, S27KS0642GABHI023 application, or S27KS0642GABHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read data capture, burst configuration register settings, DCARS support status, and industrial-grade thermal performance under sustained 200 MHz operation.

Technical Context

The device implements a self-refresh DRAM core with integrated refresh controller, eliminating host-side refresh management while presenting static RAM-like behavior. Its HYPERBUS™ interface uses 8-bit DQ bus with single-ended or optional differential CK/CK# and bidirectional RWDS for latency signaling and data masking.

It supports linear and wrapped burst modes (8–64 clocks), hybrid burst (wrapped + linear), configurable output drive strength, and four power modes: active, interface standby, hybrid sleep, and deep power-down - with 12 µA deep power-down current at 2.0 V and 105°C.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHI023, the S27KL0642GABHI020 extends thermal capability for harsh environments, while S27KS0642GABHI010 simplifies power design at the cost of higher dynamic current - both retain identical HYPERBUS™ timing, burst control, and RWDS behavior.

Availability

S27KS0642GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, medical patient monitors, and edge AI inference accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KS0642GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

This device belongs to the HYPERRAM™ family, designed specifically to replace parallel NOR/NAND flash and SRAM in resource-constrained MCUs needing high-speed, low-pin-count external memory with zero-host refresh overhead.

FAQ

Does S27KS0642GABHI023 require external refresh circuitry or host software intervention?

No. The device integrates autonomous self-refresh logic that maintains DRAM cell charge during idle periods without any host involvement. Refresh cycles occur transparently between transactions, and the host only observes static RAM-like behavior - no refresh commands, timers, or scheduling are needed in firmware.

What is the function of the RWDS signal during write operations?

During writes, RWDS operates as a write data mask: each rising edge samples one byte of DQ[7:0] data, and its assertion duration determines how many bytes are written in the burst. This enables partial writes without read-modify-write cycles, reducing bus traffic and improving efficiency for small data updates.

Is DCARS (DDR Center-Aligned Read Strobe) enabled by default on this part?

No. DCARS is an optional feature activated via Configuration Register 1 (bit CR1[2]). By default, RWDS operates in standard center-aligned mode. Enabling DCARS introduces a fixed 90° phase shift to RWDS relative to CK, widening the data eye for reliable sampling at maximum 200 MHz operation - particularly beneficial on marginal PCB layouts.

Can S27KS0642GABHI023 operate with only a 1.8 V supply, or does it require separate VCC and VCCQ rails?

It operates with a single 1.8 V supply applied to both VCC (core) and VCCQ (I/O) pins. The device does not require split-rail operation. The 1.8 V/3.0 V designation refers to ordering variants - this specific part (GABHI023) is the 1.8 V version, with absolute max ratings and timing validated for 1.8 V ±0.15 V operation.