Infineon Technologies S27KS0642GABHI033

Overview

S27KS0642GABHI033 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial temperature range (−40°C to +85°C) in 24-ball FBGA package. Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory with no host-managed refresh.

For engineers reviewing the S27KS0642GABHI033 datasheet, S27KS0642GABHI033 pinout, S27KS0642GABHI033 application, or S27KS0642GABHI033 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read capture, burst configuration register settings, and Deep Power-Down current (12 µA at 2.0 V), critical for battery-powered edge devices and automotive infotainment head units.

Technical Context

This PSRAM implements a self-refresh DRAM core with integrated refresh control logic, eliminating host refresh management. Its HYPERBUS™ interface uses only 11–12 signals (including optional CK#), with command/address/data multiplexed on DQ[7:0] and RWDS serving dual roles: initial latency indicator and read/write strobe/mask.

The device supports linear and wrapped burst modes, DCARS-enabled center-aligned RWDS for improved read data eye margin, and hybrid sleep/deep power-down modes. Timing-critical parameters include tACC = 35 ns max, 200 MHz DDR clock, and configurable output drive strength - all managed via Configuration Registers 0 and 1 accessible over the HYPERBUS™ interface.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHI033, the Cypress variant offers identical performance and drop-in compatibility, while the ISSI SRAM trades bandwidth and pin-efficiency for deterministic timing and zero refresh complexity - making it suitable only for non-HYPERBUS™ legacy platforms.

Availability

S27KS0642GABHI033 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI controllers, edge AI sensor hubs, and portable medical monitors requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S27KS0642GABHI033 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and SRAM in MCU-based systems where high bandwidth, low pin count, and self-refresh simplicity are required - targeting automotive, industrial, and IoT edge applications.

FAQ

What is the function of the RWDS signal in S27KS0642GABHI033?

RWDS is a bidirectional strobe that serves three confirmed roles: (1) output at transaction start to indicate refresh latency count, (2) output during reads as edge-aligned read data strobe, and (3) input during writes as byte-level write mask. Its phase can be shifted via DCARS mode to center-align transitions within the read data eye, improving timing margin at 200 MHz DDR operation.

Does S27KS0642GABHI033 require external refresh commands from the host?

No. The device contains fully autonomous self-refresh logic that schedules DRAM array refresh during idle periods without host intervention. The host sees static RAM behavior - no refresh cycles, timers, or commands are needed. Refresh is triggered internally based on temperature and time, and signaled to the host only via RWDS assertion at transaction start when latency must be extended.

Can S27KS0642GABHI033 operate with a single 1.8 V supply?

Yes. VCC and VCCQ are internally connected and rated for 1.8 V ±0.15 V nominal operation. The device supports single-supply configuration with no separate I/O voltage rail required. This is verified in Section 9.4.2 of the datasheet and confirmed in ordering information for the "GABHI" suffix, which denotes 1.8 V VCC/VCCQ industrial-grade variants.

What is the minimum supported burst length and how is it configured?

The minimum supported burst length is 16 bytes (8 clocks), selectable via Configuration Register 0 (CR0[1:0]). Burst length is set at power-up or dynamically via HYPERBUS™ register write; options include 16, 32, 64, or 128 bytes. Wrapped burst mode is mandatory for all lengths, ensuring address wrap-around within the selected page - critical for cache-line-aligned MCU memory accesses.