Infineon Technologies S27KS0642GABHM020

Overview

S27KS0642GABHM020 from Infineon Technologies is a 64-Mbit HyperRAM self-refresh DRAM with HyperBus interface, operating at 1.8 V or 3.0 V, rated for automotive Grade 1 (–40 °C to +125 °C). It delivers up to 400 MBps throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz clock, and features bidirectional RWDS for read strobe/write mask functionality in automotive infotainment and ADAS memory subsystems.

For engineers reviewing the S27KS0642GABHM020 datasheet, S27KS0642GABHM020 pinout, S27KS0642GABHM020 application, or S27KS0642GABHM020 equivalent, key selection criteria include its 24-ball FBGA package, configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and support for both single-ended and differential clock (CK/CK#) in space-constrained automotive memory expansion designs.

Technical Context

The S27KS0642GABHM020 implements a HyperBus interface with 11–12 signal lines (including optional CK#), using LV-CMOS signaling and center-aligned command/address transfers. Its internal refresh logic enables pseudo-static operation-eliminating host-managed refresh while requiring host-enforced transaction length limits to accommodate internal array refresh cycles.

It supports linear and wrapped burst modes, configurable output drive strength, and DDR data transfers on DQ[7:0], with RWDS serving dual roles: as initial latency indicator during CA transfer, and as edge-aligned read strobe or write mask during data phases. DCARS mode provides phase-shifted RWDS timing to optimize read data capture window alignment.

Key Specifications

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-refresh DRAM applications.

Compared with CY15B104QN-SXIT and IS43TR16256B-125KBL, the S27KS0642GABHM020 uniquely balances automotive-grade reliability, HyperBus simplicity, and DRAM-class bandwidth-making it optimal for cost- and space-constrained ADAS and cluster memory expansion where refresh transparency and 200 MHz timing determinism are essential.

Availability

S27KS0642GABHM020 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS camera subsystems, and infotainment head-units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KS0642GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and memory solutions, with global R&D and manufacturing infrastructure.

The HyperRAM product line targets automotive and industrial systems needing high-density, low-pin-count external memory with deterministic timing and AEC-Q100 compliance-bridging the gap between NOR flash and traditional DRAM.

FAQ

Does S27KS0642GABHM020 require external refresh circuitry or host-controlled refresh commands?

No. The device integrates autonomous self-refresh logic that manages DRAM array refresh internally without host intervention. The host sees it as a pseudo-static RAM (PSRAM); however, transaction duration must be limited per datasheet guidelines to allow internal refresh cycles to complete between bursts.

What is the function of the RWDS pin during write transactions?

During write transactions, RWDS serves as a byte-level write mask: when HIGH, the corresponding DQ[7:0] byte is masked and not written to memory; when LOW, the byte is valid and stored. This enables efficient merging of misaligned writes and partial-word updates without read-modify-write overhead.

Can S27KS0642GABHM020 operate with only single-ended clock (CK), or is differential clock (CK/CK#) mandatory?

Single-ended clock (CK only) is fully supported and commonly used. CK# is optional and provided for improved noise immunity in electrically noisy automotive environments. The device automatically detects and adapts to the clock configuration based on CK# pin state at power-up.

Is DCARS (DDR Center-Aligned Read Strobe) enabled by default, and how is it configured?

DCARS is disabled by default. It is enabled by setting bit 4 of the Configuration Register (CR[4]) via HyperBus register write. When active, RWDS transitions are phase-shifted relative to CK to align the strobe edge at the center of the read data eye-improving setup/hold margins in high-speed PCB layouts.