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Infineon Technologies S27KS0642GABHM023

Part No.:
S27KS0642GABHM023
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS27KS0642GABHM023.pdf
Description:
IC PSRAM 64MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,134

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Product details

Overview

S27KS0642GABHM023 from Infineon is a 64-Mbit Automotive Grade 1 HyperRAM self-refresh DRAM with HyperBus interface, operating at 1.8 V or 3.0 V, supporting up to 200 MHz DDR clock rate and delivering 400 MBps throughput. It integrates on-die refresh control, presents as pseudo-static RAM to host controllers, and features bidirectional RWDS for latency indication, read strobe, and write masking - deployed in automotive ADAS display buffers and infotainment memory expansion.

For engineers reviewing the S27KS0642GABHM023 datasheet, S27KS0642GABHM023 pinout, S27KS0642GABHM023 application, or S27KS0642GABHM023 equivalent, key selection criteria include HyperBus timing compliance (tACC ≤ 35 ns), AEC-Q100 Grade 1 temperature range (–40 °C to +125 °C), configurable burst lengths (16–128 bytes), DCARS support, and FBGA-24 package compatibility with 5 mm × 5 mm footprint.

Technical Context

The S27KS0642GABHM023 implements a DDR HyperBus interface with 8-bit DQ bus, single-ended or optional differential CK/CK#, and bidirectional RWDS used for initial latency signaling, source-synchronous read strobe, and byte-level write masking. Its internal logic manages partial or full array refresh autonomously without host intervention.

It supports linear and wrapped burst modes (16/32/64/128-byte), hybrid burst (wrapped + linear), configurable output drive strength, and four power modes: Interface Standby, Active Clock Stop, Hybrid Sleep, and Deep Power Down - enabling dynamic power scaling in automotive real-time systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (8 MByte) - provides compact high-bandwidth buffer for graphics frame storage or firmware overlay.
Interface StandardHyperBus DDR - 11–12 signal count, low-pin-count alternative to parallel NOR/NAND or LPDDR, reducing PCB routing complexity.
Max Clock Rate200 MHz - enables 400 MBps peak data throughput with double-data-rate transfers on DQ[7:0].
Access TimetACC ≤ 35 ns - defines worst-case latency from command/address latch to first valid read data edge-aligned with RWDS.
Operating Temp–40 °C to +125 °C (AEC-Q100 Grade 1) - qualified for under-hood and instrument cluster deployment without derating.
Supply VoltagesVCC/VCCQ = 1.8 V or 3.0 V - dual-voltage support allows interoperability with 1.8 V SoCs or legacy 3.0 V microcontrollers.
Burst Lengths16/32/64/128 bytes (wrapped or linear) - enables cache-line-aligned reads (wrapped) or sequential streaming (linear).

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm ball pitch, RoHS-compliant, moisture sensitivity level 3 (MSL3).

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock input (optional)Enables center-aligned DDR timing; CK# required only when differential mode enabled via configuration register.
CS#Chip select inputActive-low enable for all HyperBus transactions; deassertion terminates current burst and initiates bus release.
RWDSBidirectional read/write data strobeIndicates refresh latency at transaction start; serves as edge-aligned read strobe or write mask signal during data phase.
DQ[7:0]8-bit bidirectional data busCarries command/address (6 bytes), then read/write data; LV-CMOS compatible at 1.8 V or 3.0 V I/O voltage.
RESET#Hardware reset inputAsynchronous active-low signal that forces device into known state and clears internal registers and pending transactions.

Key Features

FeatureDesign Value
Self-refresh DRAM architectureEliminates external refresh controller overhead; host sees static-like behavior while achieving DRAM density and cost efficiency.
Configurable burst modeSupports both wrapped (cache-line fill) and linear (streaming) bursts - selectable per transaction via command encoding.
DCARS capabilityOptional DDR Center-Aligned Read Strobe shifts RWDS phase relative to CK to center strobe edge within read data eye, improving timing margin.
Hybrid Sleep ModeRetains data while reducing current to <10 µA; faster wake-up than Deep Power Down, suitable for periodic sensor polling intervals.
AEC-Q100 Grade 1 qualificationValidated for automotive environments including thermal cycling, vibration, and ESD robustness - no additional qualification needed for Tier-1 BOMs.

Applications

ADAS Display BufferInfotainment UI Framestore

Use Scenario: Real-time rendering of multi-zone dashboard graphics with simultaneous camera feed overlay.

IC Role / Device Role / Timing Role: High-throughput frame buffer between SoC GPU and display controller, using wrapped 64-byte bursts for cache-line-aligned pixel fetches.

Use Value: 400 MBps bandwidth sustains 1080p@60Hz RGB888 rendering with sub-35 ns tACC ensuring deterministic pixel pipeline timing.

Use Scenario: Concurrent loading of navigation maps, voice assistant assets, and media metadata in head-unit systems.

IC Role / Device Role / Timing Role: Expandable PSRAM for application code/data overlay, accessed via linear 128-byte bursts for contiguous asset streaming.

Use Value: Self-refresh eliminates CPU refresh interrupts; AEC-Q100 Grade 1 ensures reliability across vehicle lifecycle without thermal throttling.

Instrument Cluster Memory ExpansionAutomotive Gateway Firmware Cache

Use Scenario: Dynamic gauge animation and warning icon updates requiring low-latency, jitter-free memory access.

IC Role / Device Role / Timing Role: Low-latency Pseudo-SRAM replacement for legacy SRAM, interfaced directly to MCU HyperBus port with single-cycle command decode.

Use Value: 35 ns tACC and RWDS-based latency signaling guarantee deterministic response to safety-critical UI updates.

Use Scenario: Caching signed firmware images and secure boot configuration tables in domain controllers.

IC Role / Device Role / Timing Role: Non-volatile-adjacent fast memory for authenticated image verification and decompression before loading into execution RAM.

Use Value: Deep Power Down mode (<1 µA) preserves cached integrity during sleep states; DCARS improves timing margin for cryptographic hash read operations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus-compatible PSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
S27KS0642GABHM013Same die, identical electrical specs, but rated for Industrial (–40 °C to +85 °C), not AEC-Q100 Grade 1.Lacks automotive qualification; unsuitable for under-hood or safety-critical clusters.Select only for non-automotive industrial HMI or test equipment where extended temperature is not required.
IS66WV12816EBLL-15BLIParallel async SRAM (128K × 16), 15 ns access, no self-refresh, 32-pin SOJ - higher pin count, no HyperBus protocol.No burst or DDR capability; requires full address/data bus and external refresh management.Use only if legacy design lacks HyperBus controller and board layout cannot accommodate FBGA-24 footprint.

Compared with S27KS0642GABHM013, the S27KS0642GABHM023 adds AEC-Q100 Grade 1 qualification and automotive-grade screening; versus IS66WV12816EBLL-15BLI, it reduces signal count by >60%, eliminates refresh overhead, and doubles bandwidth - making it optimal for new automotive SoC designs with HyperBus support.

Availability

S27KS0642GABHM023 is available at Aetrix Electronics and suitable for ADAS display buffers, infotainment UI framestores, and instrument cluster memory expansion requiring stable component supply across automotive production lifecycles.

Supply support for S27KS0642GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HyperRAM product line - designed specifically to bridge the cost-performance gap between SRAM and DRAM in automotive and industrial embedded systems requiring high bandwidth, low pin count, and autonomous refresh.

FAQ

Does S27KS0642GABHM023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods or Hybrid Sleep mode. Host processors interact with it as a pseudo-static RAM - no refresh commands, timers, or scheduling are needed. Refresh occurs transparently and does not interrupt active transactions, though burst length must be limited per datasheet guidelines to ensure sufficient idle time.

What is the function of the RWDS pin during write operations?

During write transactions, RWDS acts as a byte-level write mask: when RWDS is HIGH, the corresponding DQ[7:0] byte is masked and not written to memory; when LOW, the byte is valid and stored. This enables unaligned writes and merging of partial-word updates within a single burst - critical for efficient firmware patching or configuration table updates without read-modify-write cycles.

Can S27KS0642GABHM023 operate with only single-ended clock (CK), or is CK# mandatory?

CK# is optional. The device supports both single-ended (CK only) and differential (CK/CK#) clock modes. Differential mode must be enabled via configuration register and improves timing margin in noisy automotive environments. Single-ended operation is fully functional and commonly used in space-constrained layouts where routing a matched CK/CK# pair is impractical.

Is DCARS functionality enabled by default, and how is it configured?

DCARS is disabled by default. It is activated by setting bit 4 (DCARS_EN) in the Device Configuration Register (DCR), accessible via HyperBus register write. Once enabled, RWDS transitions are phase-shifted relative to CK to center the strobe edge in the read data eye - improving setup/hold margins at 200 MHz, especially with longer trace lengths or marginal signal integrity.

S27KS0642GABHM023 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™ KL
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
64Mbit
Memory Organization:
8M x 8
Memory Interface:
HyperBus
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
1.7V ~ 2V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S27KS0642GABHM023 FAQ

1.How can I place an order for S27KS0642GABHM023 through Aetrix?

Please submit a Request for Quotation (RFQ) for S27KS0642GABHM023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S27KS0642GABHM023 reliable?

The price and inventory of S27KS0642GABHM023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KS0642GABHM023 is usually 5 days.

3.What payment methods are accepted for S27KS0642GABHM023?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KS0642GABHM023 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S27KS0642GABHM023?

S27KS0642GABHM023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S27KS0642GABHM023 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S27KS0642GABHM023?

For technical support, including S27KS0642GABHM023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KS0642GABHM023 requirements.

6.How does Aetrix verify that S27KS0642GABHM023 is sourced from the original manufacturer or authorized distributors?

All S27KS0642GABHM023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KS0642GABHM023 meets industry standards.

7.What is the process for return or replacement of S27KS0642GABHM023?

All S27KS0642GABHM023 units undergo pre-shipment inspection (PSI). If there is an issue with S27KS0642GABHM023, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S27KS0642GABHM023 part is unused and in its original packaging.

Return procedure for S27KS0642GABHM023:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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