Infineon Technologies S27KS0642GABHV020

Overview

S27KS0642GABHV020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial-plus temperature range (−40°C to +105°C) in 24-ball FBGA package - used in embedded display buffers and real-time MCU offload memory.

For engineers reviewing the S27KS0642GABHV020 datasheet, S27KS0642GABHV020 pinout, S27KS0642GABHV020 application, or S27KS0642GABHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read eye margin, partial array refresh configuration, DCARS support, and industrial-plus thermal derating under sustained burst traffic.

Technical Context

This PSRAM implements a self-refresh DRAM core with integrated refresh controller, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses command/address/data multiplexing over DQ[7:0], with CK/CK# for DDR sampling and RWDS for latency signaling and data masking.

The device supports both single-ended and differential clock modes (11- vs 12-signal bus), offers hybrid sleep and deep power-down modes (12 µA at 2.0 V), and includes DCARS functionality to shift RWDS edge into the read data eye via phase-shifted clock - critical for timing closure at 200 MHz.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with exposed thermal pad; RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642GABHV020, the Cypress-branded variant offers identical performance and qualification, while the ISSI part trades HYPERBUS™ simplicity and thermal robustness for raw bandwidth and density - making it unsuitable for space-constrained industrial or automotive designs needing guaranteed −40°C to +105°C operation.

Availability

S27KS0642GABHV020 is available at Aetrix Electronics and suitable for automotive digital clusters, industrial HMIs, edge AI sensor hubs, and portable medical monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KS0642GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and low-density DDR in MCU-based systems where pin count, power, and ease of interface outweigh raw bandwidth needs.

FAQ

What is the role of RWDS in read versus write transactions?

RWDS serves three distinct roles: (1) At transaction start, its assertion signals initial access latency due to pending refresh; (2) During reads, it acts as a read data strobe edge-aligned with DQ transitions; (3) During writes, it functions as a write data mask controlling which byte lanes accept incoming data. Its bidirectional nature requires careful PCB layout with series termination and controlled impedance.

Does S27KS0642GABHV020 require external refresh control from the host MCU?

No. The device integrates autonomous self-refresh logic that manages DRAM array refresh without host intervention. The host sees a pseudo-static interface - no refresh commands, timers, or scheduling are needed. However, the host must respect initial latency indications from RWDS and limit burst duration to allow internal refresh windows, per datasheet Section 1.

Can DCARS be disabled, and what impact does it have on timing margins?

Yes, DCARS is configurable via Configuration Register 1 (bit CR1[1]). When disabled, RWDS remains edge-aligned with CK; when enabled, it shifts by half a clock cycle to center-align with read data. Enabling DCARS improves read setup/hold margin by ~150 ps at 200 MHz - critical for marginal board layouts - but requires matching CK and RWDS trace lengths within 5 mm.

How does Hybrid Sleep mode differ from Deep Power-Down in terms of wake-up time and retention?

Hybrid Sleep retains full memory contents with 330 µA current draw and wake-up latency <100 ns; Deep Power-Down reduces current to 12 µA but requires full memory initialization and register reload on wake-up (≈100 µs). Hybrid Sleep is preferred for low-latency interrupt-driven applications; Deep Power-Down suits infrequent polling scenarios like battery-backed sensors.