Infineon Technologies S27KS0642GABHV023

Overview

S27KS0642GABHV023 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It features bidirectional RWDS for read/write strobe/mask, configurable burst lengths (16–128 bytes), partial/full array refresh, and 24-ball FBGA packaging for industrial-plus (−40°C to +105°C) applications in embedded controllers and display buffers.

For engineers reviewing the S27KS0642GABHV023 datasheet, S27KS0642GABHV023 pinout, S27KS0642GABHV023 application, or S27KS0642GABHV023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment support, DCARS capability, burst configuration flexibility, and AEC-Q100 Grade 2 qualification for high-temperature automotive use.

Technical Context

The device implements a DDR HYPERBUS™ interface with 8-bit DQ bus, single-ended or optional differential clock (CK/CK#), and bidirectional RWDS that serves as both read data strobe and write data mask. Command/address and data share the same DQ[7:0] lines, with six CA bytes transferred per transaction.

Internal refresh logic enables pseudo-static operation: the host avoids managing refresh cycles, but must respect initial access latency (tACC = 35 ns max) and limit burst duration to allow internal DRAM refresh. Configuration registers control wrapped/linear burst modes, output drive strength, and power modes including Hybrid Sleep and Deep Power-Down.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, S27KS0642GABHV023 delivers 8× higher density than FRAM and 2× higher bandwidth than async SRAM within a 24-ball FBGA, making it optimal for space-constrained, high-throughput embedded displays and AI accelerators requiring DRAM economics with SRAM-like usability.

Availability

S27KS0642GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical imaging preview systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KS0642GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and SRAM in bandwidth-constrained embedded systems where low pin count, DDR performance, and self-refresh simplicity are critical.

FAQ

Does S27KS0642GABHV023 require external refresh circuitry?

No. The device integrates self-refresh logic that automatically manages DRAM array refresh during idle periods. The host processor only needs to observe initial access latency and avoid excessively long bursts - no refresh commands or timing control are required, enabling true pseudo-static operation.

What is the function of the RWDS signal in read versus write operations?

In read operations, RWDS is driven by the device as a read data strobe aligned with valid DQ transitions. In write operations, RWDS is driven by the host as a write data mask - each RWDS pulse masks one byte of the 8-bit DQ bus, enabling selective byte writes without read-modify-write cycles.

Can S27KS0642GABHV023 operate with only single-ended clock (CK) instead of differential (CK/CK#)?

Yes. The device supports both modes: single-ended operation uses CK only (CK# must be tied to VSS), while differential mode uses CK/CK# for improved noise immunity. Configuration is set via Configuration Register 0; no hardware change is needed - only register initialization differs.

Is DCARS functionality enabled by default on S27KS0642GABHV023?

No. DCARS (DDR Center-Aligned Read Strobe) is an optional feature activated by setting bit [1] in Configuration Register 1. When enabled, RWDS transitions are phase-shifted relative to CK to center the strobe within the read data eye - improving setup/hold margins at maximum 200 MHz operation.