Infineon Technologies S27KS0643GABHA023

Overview

S27KS0643GABHA023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V I/O and 200 MHz DDR clocking. It delivers up to 400 MBps throughput, features configurable burst lengths (16–128 bytes), partial array refresh, and operates across industrial (−40°C to +85°C) and automotive AEC-Q100 Grade 2 (−40°C to +105°C) temperature ranges.

For engineers reviewing the S27KS0643GABHA023 datasheet, S27KS0643GABHA023 pinout, S27KS0643GABHA023 application, or S27KS0643GABHA023 equivalent, key selection considerations include xSPI command compatibility, RWDS timing alignment for read/write strobe, DCARS phase-shifted strobe support, hybrid sleep/deep power down current specs (12 µA @ 2.0 V), and FBGA-24 package footprint compliance.

Technical Context

The S27KS0643GABHA023 implements an octal xSPI DDR interface with 11–12 signal lines (CK/CK#, CS#, DQ[7:0], RWDS, RESET#), using LV-CMOS signaling. Its internal DRAM array employs 38-nm technology and integrates autonomous self-refresh logic that masks dynamic cell behavior from the host controller.

It supports linear and wrapped burst modes (8–64 clocks), optional differential clocking, and DDR center-aligned read strobe (DCARS) to align RWDS transitions within the read data eye. Refresh is managed internally during idle cycles or via partial array refresh (1/8, 1/4, 1/2), eliminating host refresh overhead while enforcing transaction length limits to guarantee refresh latency compliance.

Key Specifications

Pinout & Package

Package: 24-ball Fine-Pitch Ball Grid Array (FBGA), 5 mm × 5 mm body, 0.8 mm ball pitch, JEDEC MO-270 compliant. Thermal pad not present; bottom-side balls are signal-only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0643GABHI020, the S27KS0643GABHA023 adds AEC-Q100 Grade 2 qualification and extended temperature support; versus W958D8MBYA, it delivers 50% higher bandwidth, deterministic RWDS timing via DCARS, and autonomous refresh-enabling drop-in replacement only in octal xSPI–capable SoCs.

Availability

S27KS0643GABHA023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical imaging preview systems requiring stable component supply, AEC-Q100 compliance, and high-bandwidth serial memory expansion.

Supply support for S27KS0643GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-bandwidth, low-pin-count memory expansion for resource-constrained embedded SoCs, specifically addressing the gap between serial flash density and parallel SDRAM complexity.

FAQ

Does S27KS0643GABHA023 require external refresh commands from the host controller?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods or via partial array refresh (1/8, 1/4, 1/2). Host controllers interact exclusively via xSPI commands and need not issue refresh instructions, making it functionally equivalent to SRAM for software.

What is the purpose of the RWDS signal and how does DCARS affect its behavior?

RWDS serves as a bidirectional strobe: output during reads to indicate valid data windows, and input during writes as a byte mask. With DCARS enabled, RWDS is phase-shifted by half a clock cycle relative to CK, centering its transition within the read data eye to improve timing margin at 200 MHz DDR operation.

Can S27KS0643GABHA023 operate with only single-ended clock (CK), or is differential clocking (CK/CK#) mandatory?

Single-ended clocking using CK only is fully supported and default. Differential mode (CK/CK#) is optional and improves noise immunity and jitter performance in electrically noisy environments but requires matched trace lengths and termination. No hardware modification is needed to switch modes-only configuration register setting.

How does the Hybrid Sleep mode differ from Deep Power Down in terms of wake-up time and data retention?

In Hybrid Sleep, contents are retained and wake-up occurs in <500 ns after CS# assertion, with current draw of 330 µA (2.0 V, 105°C). Deep Power Down reduces current to 12 µA but requires ~100 µs initialization before first access and retains data only if VCC remains above 1.71 V during sleep.