Infineon Technologies S27KS0643GABHB023

Overview

S27KS0643GABHB023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V I/O and 200 MHz DDR clocking. It delivers up to 400 MBps throughput, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power-down modes, and operates across industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S27KS0643GABHB023 datasheet, S27KS0643GABHB023 pinout, S27KS0643GABHB023 application, or S27KS0643GABHB023 equivalent, key selection considerations include xSPI command structure, RWDS timing behavior, DCARS phase-shifted strobe support, partial array refresh configuration, and voltage-specific AC timing compliance at 200 MHz.

Technical Context

The S27KS0643GABHB023 implements an octal xSPI interface with DDR data transfers on DQ[7:0], using CK (single-ended) or CK/CK# (differential) for clocking and RWDS as bidirectional strobe-output during reads (data valid indicator), input during writes (mask). It supports linear and wrapped burst modes (8–64 clocks), plus hybrid burst (wrapped + linear).

Internal refresh logic autonomously manages DRAM cell retention without host intervention, enabling PSRAM-like operation. Refresh can be partial (1/8, 1/4, 1/2 array) or full, triggered only between transactions; host must respect initial access latency signaled via RWDS assertion at transaction start.

Key Specifications

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0643GABHI020, the S27KS0643GABHB023 trades extended temperature tolerance for lower cost and tighter supply chain alignment with automotive-grade logistics; versus W958D8MWYX1I, it delivers 2× density, 2× bandwidth, and advanced power management-justifying added controller complexity in performance-critical designs.

Availability

S27KS0643GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI sensor aggregators, and medical portable monitors requiring stable component supply across long-lifecycle production programs.

Supply support for S27KS0643GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-bandwidth, low-pin-count memory expansion for resource-constrained MCUs and SoCs-designed specifically to replace parallel SRAM/SDRAM in embedded displays, automotive UIs, and real-time control systems.

FAQ

Does S27KS0643GABHB023 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that schedules DRAM array refreshes between host transactions. The host sees static RAM behavior-no refresh commands, timers, or scheduling are needed. RWDS signaling indicates when refresh latency must be accommodated before data transfer begins.

What is the purpose of the RWDS signal beyond data strobing?

RWDS serves three distinct roles: (1) output at transaction start to indicate refresh latency duration, (2) output during reads as center-aligned data strobe (with optional DCARS phase shift), and (3) input during writes as byte-enable mask. Its bidirectional nature eliminates need for separate RD/WR control lines.

Can S27KS0643GABHB023 operate with only single-ended clock (CK)?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clocking. CK-only mode uses 11 total signals (CS#, CK, RWDS, DQ[7:0], RESET#); differential mode adds CK# for improved noise immunity, using 12 signals. No hardware modification is needed-mode is determined by how the host drives the clock pins.

How does partial array refresh impact power consumption?

Partial array refresh reduces dynamic current draw proportionally: refreshing 1/8 of the array consumes ~1/8 the energy of full refresh. At 105°C and 2.0 V, standby current drops from 330 µA (full refresh) to ~41 µA (1/8 refresh), directly extending battery life in always-on edge devices without compromising data retention.