Infineon Technologies S27KS0643GABHI023

Overview

S27KS0643GABHI023 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V I/O, 200 MHz DDR clocking, and 400 MBps data throughput. It operates in industrial temperature range (–40°C to +85°C), uses 24-ball FBGA packaging, and delivers linear/wrapped burst lengths up to 128 bytes for high-bandwidth memory expansion in microcontroller-based systems.

For engineers reviewing the S27KS0643GABHI023 datasheet, S27KS0643GABHI023 pinout, S27KS0643GABHI023 application, or S27KS0643GABHI023 equivalent, this device serves as a drop-in PSRAM replacement for legacy SRAMs where low pin count, high bandwidth, and autonomous refresh are required - especially in automotive instrument clusters, industrial HMI displays, and edge AI inference accelerators.

Technical Context

The S27KS0643GABHI023 implements an octal xSPI interface with DDR signaling on DQ[7:0], using CK (single-ended) or CK/CK# (differential) for timing. RWDS functions bidirectionally as read data strobe and write data mask, with optional DCARS mode enabling phase-shifted strobe alignment for improved read eye margin at 200 MHz.

Internal refresh logic manages partial (1/8, 1/4, 1/2) or full array refresh autonomously; host only enforces transaction length limits (≤128-byte bursts) to guarantee refresh windows. Configuration registers control burst type, drive strength, and power modes including Hybrid Sleep and Deep Power Down (12 µA at 2.0 V).

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with 11 primary signals in single-ended clock configuration or 12 signals with differential CK/CK# option.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0643GABHI020, the S27KS0643GABHI023 trades extended temperature rating for lower qualification cost; versus W958D8MBYA, it adds RWDS-driven write masking and DCARS for deterministic high-speed timing - critical in real-time display and AI buffering.

Availability

S27KS0643GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and edge AI accelerators requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant memory solutions.

Supply support for S27KS0643GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and wafer fabrication infrastructure.

This part belongs to the HYPERRAM™ family - designed specifically to replace parallel SRAM in bandwidth-constrained, pin-limited embedded systems while maintaining ease of firmware integration and low system-level power.

FAQ

Does S27KS0643GABHI023 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that manages DRAM array refresh without host intervention. The host only needs to limit burst length (≤128 bytes) and allow initial access latency when signaled via RWDS - making it functionally equivalent to static RAM in software.

What is the role of RWDS in write transactions?

During writes, RWDS operates as an input serving as byte-wise write mask for DQ[7:0]. Each rising edge samples one mask bit, allowing selective updating of individual bytes within an 8-bit transfer - essential for efficient partial register or structure updates without read-modify-write cycles.

Can S27KS0643GABHI023 operate with only single-ended clock (CK)?

Yes. The device supports both single-ended (CK only, 11-signal mode) and differential (CK/CK#, 12-signal mode) clocking. Single-ended mode simplifies layout and reduces routing complexity, while differential mode improves noise immunity in electrically noisy environments like automotive cabins.

How does Deep Power Down mode affect memory retention?

In Deep Power Down mode (entered via xSPI command), the device retains all stored data but disables internal clocks and refresh logic. Retention time is guaranteed for ≥24 hours at +105°C and indefinitely at room temperature - sufficient for battery-backed or short-interval sleep states in portable equipment.