Infineon Technologies S28HS02GTFPBHM050

Overview

S28HS02GTFPBHM050 from Infineon Technologies is a 2 Gb (256 MB) Octal SPI NOR Flash memory IC with dual-die package (DDP), 1.8 V core/I/O supply, industrial-plus temperature range (–40 °C to +105 °C), and JEDEC JESD251-compliant xSPI interface supporting up to 332 MBps DDR read throughput. It implements MIRRORBIT™ 45-nm technology, 256 KB uniform/hybrid sector architecture, and on-die SECDED ECC for automotive and industrial embedded boot code storage.

For engineers reviewing the S28HS02GTFPBHM050 datasheet, S28HS02GTFPBHM050 pinout, S28HS02GTFPBHM050 application, or S28HS02GTFPBHM050 equivalent, key selection criteria include ASIL-B functional safety compliance, octal DDR timing performance, 24-ball 8×8 mm BGA package compatibility, and hybrid sector protection for firmware update partitioning.

Technical Context

This device integrates two 1 Gb MIRRORBIT™ dies in a monolithic 24-ball BGA package with shared control signals (CS#, CK, RESET#) and independent DQ[7:0]/DS/INT# I/O routing. Its embedded algorithm controller (EAC) manages all program/erase sequences autonomously, while the host interface controller (HIC) handles protocol-level transactions including wrapped/linear burst reads and SFDP parameter discovery.

The flash supports three voltage grades: HS-T (1.7–2.0 V) and HL-T (2.7–3.6 V) core/I/O, with separate VCCQ pins enabling mixed-voltage system interfacing. Safety-critical operation is enabled by SafeBoot initialization reporting, CRC-protected configuration registers, and Endurance Flex architecture that allocates high-endurance (300k cycles) 4 KB sectors alongside standard 256 KB sectors (2.56M cycles).

Key Specifications

Pinout & Package

24-ball BGA package (8 mm × 8 mm, 0.8 mm pitch) with VCC/VSS power separation for core and I/O domains, dedicated DS and INT# signaling, and hardware reset via RESET# pin with internal weak pull-up.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR Flash memory applications.

Compared with S28HS02GTFPBHM050, the Cypress alternative trades safety certification for simpler power architecture, while the Winbond part sacrifices deterministic read latency and bit-level reliability for lower unit cost-making Infineon's device uniquely suited for safety-critical boot memory where both speed and integrity are non-negotiable.

Availability

S28HS02GTFPBHM050 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging subsystems, and avionics display controllers requiring stable component supply with full functional safety documentation and long-term lifecycle support.

Supply support for S28HS02GTFPBHM050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and security solutions for automotive, industrial, and IoT markets.

The SEMPER™ Flash product line targets functional safety-critical embedded systems, delivering ASIL-B certified NOR Flash with integrated ECC, SafeBoot, and endurance-flexible sector architectures for automotive and industrial boot memory applications.

FAQ

What voltage supply options does S28HS02GTFPBHM050 support?

S28HS02GTFPBHM050 operates with HS-T supply (1.7–2.0 V) for both core (VCC) and I/O (VCCQ) domains. It does not support HL-T (2.7–3.6 V) operation. The separate VCCQ pin enables clean I/O signaling even when core voltage is tightly regulated, critical for DDR timing margin in automotive environments.

Does this device require external ECC circuitry?

No. S28HS02GTFPBHM050 includes on-die SECDED (single-error correction, double-error detection) logic that automatically corrects single-bit errors and detects double-bit errors during every read operation. This eliminates the need for external ECC controllers or software-based correction, reducing system complexity and latency.

How is the 2 Gb capacity physically implemented?

The 2 Gb capacity is realized as a multi-chip package (MCP) with two stacked 1 Gb MIRRORBIT™ dies in dual-die package (DDP) configuration. Control signals (CS#, CK, RESET#) are internally bonded in parallel across both dies, while DQ[7:0], DS, and INT# are shared I/O resources-enabling unified addressing and seamless 2 Gb operation without host-side die management.

What sector architecture options are supported?

S28HS02GTFPBHM050 supports uniform (all 256 KB sectors) and hybrid configurations: thirty-two 4 KB sectors grouped at top-only, bottom-only, or split top-and-bottom, with remaining space allocated to 256 KB sectors. This allows firmware partitioning where update zones (4 KB) are isolated from static code (256 KB), enhancing field upgrade safety and endurance management.