Infineon Technologies S29CD016J0PQAM010
- Part No.:
- S29CD016J0PQAM010
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 80-BQFP
- Datasheet:
-
S29CD016J0PQAM010.pdf
- Description:
- IC FLASH 16MBIT PARALLEL 80PQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,610
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Product details
Overview
S29CD016J0PQAM010 from Cypress Semiconductor is a 16 Mbit (512k × 32-bit) burst-mode Flash memory IC with simultaneous read/write capability across two independent banks, operating at 2.5–2.75 V supply, 66 MHz max clock frequency, and featuring dual boot sector architecture for automotive firmware redundancy. It supports x32 data bus, JEDEC-standard command set, and CFI interface.
For engineers reviewing the S29CD016J0PQAM010 datasheet, S29CD016J0PQAM010 pinout, S29CD016J0PQAM010 application, or S29CD016J0PQAM010 equivalent, key selection criteria include simultaneous bank operation latency, VersatileI/O™ voltage range (1.65–3.6 V), burst configuration flexibility (2/4/8 double-word wrap), sector protection methods (persistent/password/hardware WP#), and extended temperature support (–40 °C to +125 °C).
Technical Context
This device implements a dual-bank floating-gate Flash architecture fabricated in 110 nm process, enabling zero-latency concurrent read from one bank while programming or erasing the other. Its synchronous burst mode uses CLK, ADV#, and IND#/WAIT# signals to manage address sequencing and data validity feedback.
The memory map includes eight 2k double-word sectors at top and bottom, plus thirty 16k double-word sectors in the main array - totaling 16 Mbit capacity. Sector erase time is 1.0 s (typical), double-word programming takes 18 µs (typical), and data retention exceeds 20 years under industrial conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (512k × 32-bit) - supports full 32-bit microprocessor data path without byte-lane multiplexing |
| Supply Voltage (VCC) | 2.5 V to 2.75 V - single-rail operation simplifies power design for 2.6 V nominal automotive systems |
| Max Clock Frequency | 66 MHz - enables synchronous burst access with 8 ns tBACC for high-throughput firmware loading |
| Simultaneous Operation | Two independent banks - allows real-time code execution from one bank during firmware update in the other |
| Data Retention | 20 years (typical) - validated for long-life deployment in engine control units and ADAS modules |
| Cycling Endurance | 1 million write cycles per sector - sufficient for over-the-air (OTA) update logging and calibration storage |
| Operating Temperature | –40 °C to +125 °C - qualified for under-hood automotive applications per AEC-Q100 stress requirements |
Pinout & Package
Package: 80-pin Plastic Quad Flat Package (PQFP), lead-free (RoHS-compliant), 20.0 mm × 14.0 mm body size, 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A18–A0 | Address Input | 19-bit address bus for 512k-word addressing; A9 supports 12 V autoselect detection |
| DQ31–DQ0 | Bidirectional Data I/O | 32-bit parallel data path; supports burst reads with wrap-around addressing |
| CE#, OE#, WE# | Chip/Output/Write Enable | Asynchronous control inputs compatible with standard SRAM timing interfaces |
| CLK, ADV#, IND#, WAIT# | Burst Timing Control | Enable synchronous burst mode: CLK drives internal timing; ADV# latches address; IND# marks last word; WAIT# signals data validity in continuous bursts |
| RY/BY#, WP#, RESET#, ACC | Status & Control | RY/BY# open-drain ready/busy indicator; WP# hardware-locks outermost large-bank sectors; RESET# forces hardware reset; ACC at VHH accelerates program/erase |
| VCC, VIO, VSS | Power & Ground | VCC = 2.5–2.75 V core supply; VIO = 1.65–3.6 V I/O voltage (independent of VCC); VSS = system ground reference |
Key Features
| Feature | Design Value |
|---|---|
| Dual Boot Sector Configuration | Top and bottom 2k double-word sectors enable fail-safe firmware recovery and A/B update schemes |
| Secured Silicon Sector | Factory- or customer-lockable 2k sector for storing cryptographic keys or calibration data with tamper resistance |
| Advanced Sector Protection | Persistent lock bits + password method + hardware WP# provide layered security against accidental or malicious reprogramming |
| Suspend/Resume Commands | Pause active erase or program operations to service high-priority read requests - critical for real-time interrupt handling |
| Common Flash Interface (CFI) | Standardized query table allows automatic driver initialization and runtime parameter discovery without hard-coded assumptions |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Storing calibrated engine maps and real-time diagnostic logs subject to frequent OTA updates. IC Role / Device Role / Timing Role: Non-volatile program storage with simultaneous read/write - executes running code from one bank while updating calibration tables in the other. Use Value: Eliminates boot interruption during field updates; 1M-cycle endurance supports >10 years of daily recalibration cycles. |
Use Scenario: Hosting sensor fusion firmware and vision processing algorithms requiring deterministic low-latency access. IC Role / Device Role / Timing Role: Burst-mode Flash delivering 66 MHz synchronous reads to match processor bandwidth demands. Use Value: 8 ns burst access time ensures uninterrupted instruction fetch during high-frame-rate image analysis. |
| Infotainment Head Unit | Electric Vehicle Battery Management System (BMS) |
|
Use Scenario: Storing multimedia assets and UI firmware with secure boot verification. IC Role / Device Role / Timing Role: Secured Silicon Sector stores root-of-trust keys; dual boot enables verified rollback on corrupted updates. Use Value: Hardware-enforced sector locking prevents unauthorized firmware modification - meets ISO/SAE 21434 cybersecurity requirements. |
Use Scenario: Logging cell voltage history and thermal profiles across 10+ years of vehicle life. IC Role / Device Role / Timing Role: High-reliability non-volatile storage with 20-year data retention and extended temperature operation. Use Value: Validated –40 °C to +125 °C performance ensures accurate log integrity in battery pack thermal extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar burst-mode Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29CL016J0PQAM010 | 3.0–3.6 V supply range; identical pinout and timing but higher VCC tolerance | Preferred for 3.3 V systems with legacy power rails; lacks 2.6 V low-power advantage | Select when existing board uses 3.3 V regulators and no voltage scaling redesign is feasible |
| MX29LV160ETTI-70G | Single 3.0 V supply; asynchronous-only interface; no simultaneous read/write or burst mode | Suitable for cost-sensitive, non-real-time embedded controllers where firmware update concurrency is not required | Choose only if system does not require zero-latency background updates or synchronous throughput |
Compared with S29CL016J0PQAM010, this part offers lower active power and better compatibility with 2.6 V automotive domains; versus MX29LV160ETTI-70G, it delivers true concurrent operation and deterministic burst latency essential for safety-critical firmware updates.
Availability
S29CD016J0PQAM010 is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, infotainment head units, and battery management systems requiring stable component supply across extended product lifecycles.
Supply support for S29CD016J0PQAM010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on functional safety and long-term supply stability.
The S29CD-J series targets automotive-grade Flash memory needs - specifically engineered for zero-latency simultaneous operation, extended temperature resilience, and secure firmware storage in safety-critical ECUs and ADAS platforms.
FAQ
What is the purpose of the ACC pin on the S29CD016J0PQAM010?
The ACC (Acceleration) pin accepts VHH (typically 12 V) to reduce internal program and erase times by accelerating charge injection into the floating gate. When unused, ACC must be tied to VSS or VCC. This feature cuts typical sector erase time from 1.0 s to sub-500 ms under accelerated conditions, improving OTA update efficiency in production test and field deployment.
Does the S29CD016J0PQAM010 support JEDEC-standard commands?
Yes - the device implements the JEDEC JC42.4 standard command set, including autoselect, sector erase, chip erase, and program commands. This ensures interoperability with industry-standard Flash drivers and eliminates need for proprietary firmware abstraction layers in bootloader development.
How does the VersatileI/O™ feature benefit system design?
VersatileI/O™ allows independent VIO supply (1.65–3.6 V) separate from VCC (2.5–2.75 V), enabling direct interfacing with 1.8 V, 2.5 V, or 3.3 V logic without level shifters. This reduces BOM count and PCB area in mixed-voltage automotive subsystems such as CAN-connected ECUs with 3.3 V microcontrollers and 2.6 V Flash.
Can the S29CD016J0PQAM010 be used in synchronous and asynchronous modes simultaneously?
No - the device operates in either synchronous (burst) or asynchronous mode, selected via configuration register settings at power-up. However, within synchronous mode, CE#, OE#, and WE# remain asynchronous relative to CLK, allowing flexible timing alignment with host processors that mix burst and random-access patterns.
S29CD016J0PQAM010 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CD-J
- Package/Case:
- 80-BQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 16Mbit
- Memory Organization:
- 512K x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 66 MHz
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 54 ns
- Voltage - Supply:
- 1.65V ~ 2.75V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 80-PQFP (14x20)
S29CD016J0PQAM010 FAQ
1.How can I place an order for S29CD016J0PQAM010 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29CD016J0PQAM010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that S29CD016J0PQAM010 is sourced from the original manufacturer or authorized distributors?
All S29CD016J0PQAM010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29CD016J0PQAM010 meets industry standards.
7.What is the process for return or replacement of S29CD016J0PQAM010?
All S29CD016J0PQAM010 units undergo pre-shipment inspection (PSI). If there is an issue with S29CD016J0PQAM010, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29CD016J0PQAM010 part is unused and in its original packaging.
Return procedure for S29CD016J0PQAM010:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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