Infineon Technologies S29CD016J0PQFM110

Overview

S29CD016J0PQFM110 from Cypress Semiconductor is a 16 Mbit (512k × 32-bit) 2.6 V single-supply burst-mode Flash memory with simultaneous read/write capability across two independent banks, 66 MHz synchronous operation, dual boot sector architecture, and 110 nm floating gate technology - deployed in automotive infotainment boot code storage and firmware update partitions.

For engineers reviewing the S29CD016J0PQFM110 datasheet, S29CD016J0PQFM110 pinout, S29CD016J0PQFM110 application, or S29CD016J0PQFM110 equivalent, key selection criteria include zero-latency bank interleaving, VersatileI/O™ voltage range (1.65–3.6 V), JEDEC-standard command set compatibility, CFI support, and extended temperature operation (–40 °C to +125 °C).

Technical Context

This device implements a dual-bank architecture where upper and lower banks operate independently: one bank executes erase or program while the other performs read - all with zero latency and separate address/data paths. It supports both asynchronous and synchronous (burst) read modes, with programmable burst lengths (2/4/8 double words) and wrap-around addressing.

The internal state machine handles embedded algorithms for sector erase (1.0 s typical), double-word programming (18 µs), suspend/resume, and advanced sector protection via persistent bits or password lock. Hardware features include ACC acceleration input, WP#-enabled hardware write protection on outermost large-bank sectors, and RY/BY# status output.

Key Specifications

Pinout & Package

Package: 80-pin Plastic Quad Flat Package (PQFP), 20.0 mm × 14.0 mm body, 0.65 mm pitch, lead-free (Pb-free) option.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar burst-mode Flash memory applications.

Compared with S29CL016J0PQFM110, this part enables tighter power domain integration in 2.6 V automotive systems; versus MX29LV160ETTI-70G, it delivers 3.7× faster burst throughput and field-upgrade safety via dual boot and suspend/resume.

Availability

S29CD016J0PQFM110 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS camera modules, engine control units, and telematics control units requiring stable component supply across extended temperature and long product lifecycles.

Supply support for S29CD016J0PQFM110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability non-volatile memory and programmable system-on-chip solutions for automotive, industrial, and communications markets.

The S29CD-J series targets automotive-grade Flash applications demanding simultaneous operation, extended temperature resilience, and secure firmware storage - specifically engineered for ECU, ADAS, and infotainment boot and update architectures.

FAQ

What is the function of the ACC pin on S29CD016J0PQFM110?

The ACC (Acceleration) pin accepts VHH (typically 12 V) to reduce internal program and erase times by enabling higher internal pump voltages. When unused, ACC must be tied to VSS or VCC - floating is prohibited. This pin directly cuts double-word programming time from 18 µs to ~10 µs and sector erase from 1.0 s to ~0.7 s under accelerated conditions.

Does S29CD016J0PQFM110 support true simultaneous read and write across banks?

Yes - the device contains physically separate upper and lower memory banks with independent address/data paths and control logic. While one bank executes an embedded erase or program algorithm, the other bank can perform asynchronous or synchronous reads with zero latency and no arbitration delay, confirmed in Section 4 block diagram and Section 7.7 of the datasheet.

How is dual boot sector configuration implemented in this device?

Dual boot sector configuration is fixed in silicon: eight 2k double-word sectors at top and bottom of the memory map, plus thirty 16k double-word sectors in the middle. Boot sector selection (top or bottom) is determined by the 16th character in the orderable part number (0 = top boot, 1 = bottom boot); no runtime register setting is required.

Can S29CD016J0PQFM110 operate with a 1.8 V I/O interface?

Yes - the VersatileI/O™ feature allows VIO to be set between 1.65 V and 3.6 V independently of VCC. With VCC = 2.6 V and VIO = 1.8 V, all I/O pins (DQ31–DQ0, CE#, OE#, WE#, etc.) are fully compliant to 1.8 V logic levels, eliminating external level shifters when interfacing to low-voltage microcontrollers.