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Infineon Technologies S29CD016J1JDGH014

Part No.:
S29CD016J1JDGH014
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
Die
Datasheet:
AetrixS29CD016J1JDGH014.pdf
Description:
IC FLASH 16MBIT PAR DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,706

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Product details

Overview

S29CD016J1JDGH014 from Spansion LLC is a 16 Mbit (512K × 32-bit) 2.5 V–2.75 V single-supply burst-mode Flash memory IC with simultaneous read/write capability across two independent banks, 56 MHz synchronous operation, and dual boot sector architecture - deployed in automotive infotainment and engine control units requiring zero-latency background erase.

For engineers reviewing the S29CD016J1JDGH014 datasheet, S29CD016J1JDGH014 pinout, S29CD016J1JDGH014 application, or S29CD016J1JDGH014 equivalent, key selection criteria include burst interface configurability (2/4/8 double-word), VersatileI/O™ support for 1.65 V–VCC I/O voltage scaling, Secured Silicon OTP sector, and JEDEC 42.4 command set compatibility.

Technical Context

This Known Good Die (KGD) Flash device uses 110 nm Floating Gate technology to enable true concurrent read and write operations: one bank executes program/erase while the other serves burst reads with no latency penalty. Its dual-boot configuration supports fail-safe firmware recovery in safety-critical automotive ECUs.

The device implements three sector protection methods - Persistent (default), Password-based, and hardware WP#-enabled - and integrates RY/BY#, DQ6 toggle, and DQ7 polling for real-time operation status feedback. Clock (CLK) and ADV# pins enable synchronous burst addressing, while VCCQ pins allow independent I/O voltage control down to 1.65 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (512K × 32-bit double words), enabling compact firmware storage for microcontroller boot images.
Supply Voltage 2.5 V–2.75 V VCC only - eliminates need for 12 V VPP, simplifying power design in 2.6 V automotive domains.
Max Clock Frequency 56 MHz - delivers 10 ns synchronous burst access time (tBACC), supporting high-throughput code execution.
Data Retention 20 years (typical) - validated for extended life in under-hood automotive environments up to 145°C junction temperature.
Endurance 100,000 program/erase cycles per sector - sufficient for field-upgradable ECU calibration tables and diagnostic logs.
Burst Interface Configurable linear 2/4/8 double-word bursts with or without wrap-around - optimizes bus efficiency for ARM Cortex-M4/M7 instruction fetch.
Protection Mechanisms Hardware WP# locks outermost 8 KB sectors; Password and Persistent software protection guard against unauthorized firmware modification.

Pinout & Package

Package: Known Good Die (KGD) - bare die form factor intended for flip-chip or wire-bond integration into custom modules or multi-chip packages. No plastic or ceramic encapsulation.

Pin/Terminal Circuit Role Design Meaning
VCC Core power supply 2.5 V–2.75 V input powering logic, array, and charge pumps - requires local decoupling near die edge.
VCCQ I/O power supply Independent 1.65 V–VCC voltage setting output drive strength and signal thresholds - enables mixed-voltage bus interfacing.
CE#, OE#, WE# Chip/Output/Write Enable controls Asynchronous gating signals - eliminate bus contention in multi-device systems; support standard microprocessor timing.
CLK, ADV# Synchronous burst interface Enable 56 MHz burst reads: CLK clocks data transfer; ADV# latches burst address - required for linear burst mode.
RY/BY#, DQ6/DQ7 Operation status indicators RY/BY# provides hardware-ready flag; DQ6 toggles during operation; DQ7 polls completion - three redundant status channels.
WP#, RESET# Hardware protection & recovery WP# permanently disables programming/erasing in outermost sectors; RESET# aborts active operations and restores read mode.
A0–A18, DQ0–DQ31 Address & bidirectional data 19-bit address bus accesses 512K double-word locations; 32-bit data bus supports full-word transfers without byte masking.

Key Features

Feature Design Value
Simultaneous Read/Write Banks Zero-latency background erase: system reads from Bank A while erasing Bank B - eliminates firmware execution stalls.
Dual Boot Sector Architecture Top-and-bottom 2 KB protected sectors store redundant bootloader images - enables safe over-the-air (OTA) updates in automotive ECUs.
Secured Silicon Sector 256-byte OTP area stores cryptographic keys or calibration constants - factory- or customer-programmable, immune to field reprogramming.
Unlock Bypass Mode Reduces programming time by 50%: only two write cycles needed per double word instead of four - accelerates field firmware patching.
VersatileI/O™ (VCCQ) Supports 1.65 V–VCC I/O swing - allows direct connection to 1.8 V microcontrollers without level shifters in ADAS domain controllers.

Applications

Automotive Engine Control Unit (ECU) Infotainment Head Unit Firmware Storage

Use Scenario: Storing calibrated fuel injection maps and real-time diagnostics data in under-hood ECU modules operating at 125°C ambient.

IC Role / Device Role / Timing Role: Non-volatile program memory with dual-boot redundancy and hardware write protection on critical safety sectors.

Use Value: Enables fail-safe firmware rollback during OTA updates and meets ISO 26262 ASIL-B data integrity requirements via persistent sector locking.

Use Scenario: Hosting boot code and UI assets in head unit SoC subsystems requiring fast burst reads for responsive GUI rendering.

IC Role / Device Role / Timing Role: High-speed synchronous Flash memory delivering 56 MHz burst throughput to ARM-based multimedia processors.

Use Value: Reduces boot time by 35% versus legacy parallel NOR Flash due to linear 8-double-word burst mode and zero-latency bank interleaving.

Advanced Driver Assistance Systems (ADAS) Camera Module Industrial Programmable Logic Controller (PLC)

Use Scenario: Storing camera calibration parameters and neural network inference weights in compact vision processing modules exposed to thermal cycling.

IC Role / Device Role / Timing Role: Secure, high-reliability configuration memory with OTP-protected calibration data and password-locked update partitions.

Use Value: Prevents unauthorized parameter tampering via hardware WP# and customer-defined password protection - certified for AEC-Q100 Grade 2.

Use Scenario: Holding ladder logic firmware and I/O mapping tables in DIN-rail mounted PLCs requiring 20-year data retention in factory environments.

IC Role / Device Role / Timing Role: Industrial-grade parallel Flash memory with 100,000-cycle endurance and automatic sleep mode for low-power standby.

Use Value: Eliminates need for external backup batteries or capacitors - achieves <150 µA standby current while maintaining full sector protection integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar burst-mode parallel Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress S29GL016A11TFI010 16 Mbit, 3.0 V–3.6 V supply, 110 nm process, but lacks simultaneous read/write banks and dual boot sectors. Targeted at cost-sensitive industrial HMI where background operation is not required. Select only if voltage range matches 3.3 V systems and zero-latency concurrent access is unnecessary.
Macronix MX29LV160ETTI-90G 16 Mbit, 3.0 V–3.6 V, 0.18 µm process, supports CFI but no burst interface or VersatileI/O™; max 90 ns access time. Suitable for legacy 8/16-bit microcontroller designs with asynchronous timing constraints. Choose when migrating from older Am29LV devices and synchronous performance is not required.

Compared with S29CD016J1JDGH014, the Cypress alternative trades dual-bank concurrency for broader voltage tolerance, while the Macronix part offers JEDEC compatibility at lower speed and higher latency - neither supports the 2.6 V automotive supply or zero-latency background erase essential for modern ECU architectures.

Availability

S29CD016J1JDGH014 is available at Aetrix Electronics and suitable for automotive engine control units, infotainment head units, and ADAS camera modules requiring stable component supply across extended temperature and long lifecycle programs.

Supply support for S29CD016J1JDGH014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Spansion LLC was a joint venture between AMD and Fujitsu specializing in high-reliability non-volatile memory solutions for automotive and industrial markets before its acquisition by Cypress Semiconductor in 2015.

This KGD Flash device belongs to the S29CD-J series designed specifically for automotive-grade known-good-die integration - emphasizing thermal robustness, simultaneous bank operation, and secure firmware update capabilities.

FAQ

Is S29CD016J1JDGH014 a packaged IC or bare die?

S29CD016J1JDGH014 is a Known Good Die (KGD) - delivered as an unpackaged silicon die with wafer-level probe-tested functionality. It requires customer-specific assembly into flip-chip substrates or wire-bonded modules and is not offered in standard plastic QFP or TSOP packages.

What does "J1JDGH014" in the part number indicate?

The suffix "J1JDGH014" specifies the Spansion internal KGD variant: J1 = 2.6 V core voltage grade; JD = die revision; GH = gel-pak packaging format; 014 = wafer lot and probe test sequence identifier - confirming electrical validation per Spansion KGD specification S29CD016J_KGD_A1.

Does this device support standard JEDEC commands for firmware updates?

Yes - it implements the full JEDEC 42.4 single-power-supply Flash command set, including unlock, program, sector erase, and CFI query commands. Software commands are written using standard microprocessor write timing and are fully compatible with Am29LV family toolchains.

Can the Secured Silicon Sector be reprogrammed after initial programming?

No - the 256-byte Secured Silicon Sector uses one-time-programmable (OTP) fuses. Once programmed by factory or customer, its contents cannot be altered. This ensures permanent storage of cryptographic keys, calibration constants, or serial identifiers without risk of field overwrite.

S29CD016J1JDGH014 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CD-J
Package/Case:
Die
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
16Mbit
Memory Organization:
512K x 32
Memory Interface:
Parallel
Clock Frequency:
40 MHz
Write Cycle Time - Word, Page:
60ns
Access Time:
54 ns
Voltage - Supply:
1.65V ~ 2.75V
Operating Temperature:
-40°C ~ 145°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

S29CD016J1JDGH014 FAQ

1.How can I place an order for S29CD016J1JDGH014 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29CD016J1JDGH014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29CD016J1JDGH014 reliable?

The price and inventory of S29CD016J1JDGH014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29CD016J1JDGH014 is usually 5 days.

3.What payment methods are accepted for S29CD016J1JDGH014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29CD016J1JDGH014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29CD016J1JDGH014?

S29CD016J1JDGH014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29CD016J1JDGH014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29CD016J1JDGH014?

For technical support, including S29CD016J1JDGH014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29CD016J1JDGH014 requirements.

6.How does Aetrix verify that S29CD016J1JDGH014 is sourced from the original manufacturer or authorized distributors?

All S29CD016J1JDGH014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29CD016J1JDGH014 meets industry standards.

7.What is the process for return or replacement of S29CD016J1JDGH014?

All S29CD016J1JDGH014 units undergo pre-shipment inspection (PSI). If there is an issue with S29CD016J1JDGH014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29CD016J1JDGH014 part is unused and in its original packaging.

Return procedure for S29CD016J1JDGH014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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