Infineon Technologies S29GL01GS11FHI010

Overview

S29GL01GS11FHI010 from Infineon is a 1 Gb (128 MB) parallel NOR flash memory IC with 16-bit data bus, 3.0 V core supply (2.7–3.6 V), and industrial temperature grade (–40°C to +85°C). It delivers 90 ns random access time, 15 ns page access time, 512-byte write buffer, hardware ECC for single-bit correction, and uniform 128-kB sector erase - deployed in boot code storage for industrial PLCs and automotive ECUs.

For engineers reviewing the S29GL01GS11FHI010 datasheet, S29GL01GS11FHI010 pinout, S29GL01GS11FHI010 application, or S29GL01GS11FHI010 equivalent, key selection criteria include page-mode read latency, Versatile I/O voltage range (1.65 V to VCC), OTP array configuration, ASP protection granularity, and AEC-Q100 Grade 3 compliance status.

Technical Context

This device implements an asynchronous parallel interface with word-aligned addressing (A0–A25), supporting both standard and page-mode reads. Its embedded algorithm controller (EAC) manages program/erase operations with suspend/resume capability and status reporting via status register, data polling, or RY/BY# pin.

The internal architecture integrates MIRRORBIT™ Eclipse 65-nm cell technology, enabling simultaneous bit-line sensing for faster access. Hardware ECC operates transparently during read cycles, correcting single-bit errors without software intervention and flagging uncorrectable multi-bit errors in the ECC status ASO.

Key Specifications

Pinout & Package

Package: 56-pin TSOP (Type I, 14 mm × 20 mm, 0.5 mm pitch), compliant with JEDEC MO-142AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Compared with S29GL01GS11FHI010, the S29GL01GS10TFI010 offers identical functionality in a mechanically incompatible TSOP variant, while the MX29GL128FDTI-90G sacrifices density, ECC, and security features to reduce BOM cost in less demanding applications.

Availability

S29GL01GS11FHI010 is available at Aetrix Electronics and suitable for industrial PLC boot memory, automotive ECU firmware storage, and medical imaging system BIOS requiring stable component supply across multi-year production cycles.

Supply support for S29GL01GS11FHI010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and high-reliability memory solutions.

The GL-S family targets embedded systems needing robust, high-density parallel NOR flash with XIP capability, ECC, and automotive-grade qualification - designed for mission-critical boot and firmware storage where data integrity and long-term availability are mandatory.

FAQ

What is the maximum operating frequency supported by S29GL01GS11FHI010?

The device operates asynchronously with no clock input; its performance is defined by access times, not frequency. At 5 MHz bus toggle rate, active read current is 60 mA. The 90 ns random access and 15 ns page access times set practical throughput limits - achieving ~11 MBps sustained read in page mode, independent of host clock domain.

Does S29GL01GS11FHI010 support byte-level writes?

No, it does not support true byte-level writes. All program operations occur on 16-bit words (DQ0–DQ15), and the write buffer accepts only multiples of 256 words (512 bytes). Byte programming requires masking unused bits in the host interface, but the internal cell programming granularity remains word-based per the MIRRORBIT™ architecture.

How is the OTP array protected against accidental overwrite?

The 1024-byte OTP array has two independently lockable regions. Once locked via dedicated CFI commands (0x60 → 0xD0), the lock bits become irreversible - no command or voltage sequence can unlock them. Lock status is readable via the CFI query mode, and attempts to program locked regions return status register error flags without altering stored data.

Can S29GL01GS11FHI010 be used in a 1.8 V I/O system?

Yes, VIO can be set to 1.8 V (within 1.65–VCC range) while VCC remains at 3.0 V. This enables direct connection to 1.8 V FPGAs or ASICs without level shifters. However, all timing parameters (e.g., tACC = 100 ns) and DC specs (e.g., VIH = 0.7×VIO) scale accordingly - full validation per the VersatileIO column in the datasheet's performance summary is required.