Infineon Technologies S29GL01GS11FHIV23

Overview

S29GL01GS11FHIV23 from Infineon is a 1 Gb (128 MB) parallel NOR flash memory IC with 3.0 V core supply, ×16 data bus, and MIRRORBIT™ Eclipse 65 nm process technology. It delivers 90 ns random access time, 15 ns page access time, and integrated hardware ECC for single-bit error correction. Designed for embedded boot code storage in industrial and automotive systems, it supports uniform 128-kbyte sector erase and 512-byte buffer programming.

For engineers reviewing the S29GL01GS11FHIV23 datasheet, S29GL01GS11FHIV23 pinout, S29GL01GS11FHIV23 application, or S29GL01GS11FHIV23 equivalent, key selection criteria include its 1 Gb density, Versatile I/O (1.65 V–VCC), AEC-Q100 Grade 2 qualification (–40°C to +105°C), 100,000 program/erase cycles, and support for suspend/resume during erase and program operations.

Technical Context

This device implements an asynchronous parallel interface with word-aligned addressing (A0–A25), 32-byte page read capability, and hardware-managed ECC that corrects single-bit errors on-the-fly during read. Its Embedded Algorithm Controller (EAC) executes internal program and erase sequences without host intervention.

The GL-S architecture separates command execution from data transfer via dedicated control pins (CE#, OE#, WE#), supports status monitoring via RY/BY# pin or status register polling, and enables sector-level protection using volatile/non-volatile ASP methods plus a 1024-byte OTP array with dual lockable regions.

Key Specifications

Pinout & Package

Package: 64-ball LAE Fortified BGA (9 mm × 9 mm, 0.8 mm pitch). Pinout validated per Infineon datasheet 001-98285 Rev. *U, Section 12.2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash applications.

Compared with S29GL01GP11FHIV23 and MX29GL128FHT2I-90G, the S29GL01GS11FHIV23 uniquely combines AEC-Q100 Grade 2 qualification, hardware ECC, Versatile I/O, and 1 Gb density in a Fortified BGA-making it the only option meeting full automotive ECU and high-reliability industrial firmware storage requirements.

Availability

S29GL01GS11FHIV23 is available at Aetrix Electronics and suitable for automotive ECU development, industrial PLC firmware deployment, and telecom base station boot memory applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S29GL01GS11FHIV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and non-volatile memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The GL-S family targets high-reliability embedded systems needing fast XIP-capable flash with automotive-grade robustness, integrating MIRRORBIT™ Eclipse technology to balance density, speed, and endurance in a single 3.0 V supply device.

FAQ

What is the maximum operating temperature range for S29GL01GS11FHIV23?

The S29GL01GS11FHIV23 is rated for –40°C to +105°C and qualified to AEC-Q100 Grade 2. This specification is confirmed in the "Temperature range / grade" section of the official Infineon datasheet 001-98285 Rev. *U, page 1. It supports under-hood automotive applications and high-ambient industrial environments without derating.

Does this device require separate VCC and VIO supplies?

Yes - S29GL01GS11FHIV23 mandates independent VCC (2.7–3.6 V for core logic) and VIO (1.65–VCC for I/O buffers). This Versatile I/O architecture is documented in Section 1.1 ("General description") and Table 10.5 ("DC characteristics") of the datasheet, enabling direct interfacing with 1.8 V or 3.3 V host processors without external level shifters.

How does the 512-byte programming buffer improve write performance?

The buffer allows up to 256 words (512 bytes) to be loaded before initiating internal programming, reducing host overhead and total programming time. Per datasheet Section 1.1 and Table 5.7, effective buffer programming rate reaches 1.5 MBps - significantly faster than single-word programming, especially for firmware patching and field updates.

Is hardware ECC enabled by default, and can it be disabled?

Hardware ECC is always active during read operations and cannot be disabled; it operates transparently in the data path. As stated in Section 1.1 ("Distinctive characteristics") and Section 5.3 ("Automatic ECC"), single-bit correction is performed automatically on every read, with uncorrectable multi-bit errors flagged via status register bit SR7. No configuration register controls this feature.