Infineon Technologies S29GL01GS11TFA010
- Part No.:
- S29GL01GS11TFA010
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 56-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
S29GL01GS11TFA010.pdf
- Description:
- IC FLASH 1GBIT PARALLEL 56TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,498
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Product details
Overview
S29GL01GS11TFA010 from Infineon is a 1 Gb (128 MB) parallel NOR flash memory IC with 3.0 V core supply, 16-bit data bus, and 65 nm MIRRORBIT™ Eclipse process technology. It delivers 90 ns random access time, 15 ns page access time, and integrated hardware ECC for single-bit error correction. Designed for embedded boot code storage in industrial control systems requiring high reliability and fast XIP execution.
For engineers reviewing the S29GL01GS11TFA010 datasheet, S29GL01GS11TFA010 pinout, S29GL01GS11TFA010 application, or S29GL01GS11TFA010 equivalent, key selection criteria include uniform 128 kB sector erase granularity, 512-byte write buffer throughput (1.5 MBps), Versatile I/O support (1.65 V–VCC), AEC-Q100 Grade 2 qualification (–40°C to +105°C), and OTP array with dual lockable regions.
Technical Context
This device implements an asynchronous parallel interface with word-aligned addressing (A0–A25), supporting both standard read and 32-byte page-mode reads. Its embedded algorithm controller (EAC) manages program/erase operations autonomously, including suspend/resume capability and status reporting via status register, data polling, or RY/BY# pin.
The architecture integrates on-die ECC logic, automatic error detection and correction during read cycles, and advanced sector protection (ASP) with volatile/non-volatile locking per 128 kB sector. The separate 1024-byte OTP array supports secure configuration storage with two independently lockable regions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 Gb (128 MB); supports full boot image storage for complex microcontrollers |
| Random Access Time | 90 ns at VCC = VIO; enables deterministic XIP execution latency |
| Page Access Time | 15 ns; accelerates sequential instruction fetch within 32-byte aligned pages |
| Write Buffer Size | 512 bytes; reduces effective programming time by batching up to 256 words |
| ECC Support | On-die hardware single-bit error correction; eliminates need for external ECC logic |
| Endurance | 100,000 program/erase cycles per sector; suitable for field-upgradable firmware |
| Data Retention | 20 years at +85°C; ensures long-term reliability in unpowered storage |
Pinout & Package
Package: 64-ball LAE Fortified BGA (9 mm × 9 mm, 0.8 mm pitch). Pinout validated per Infineon datasheet 001-98285 Rev. *U, Section 12.2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A25 | Address Inputs | 26-bit word address bus; A25 is MSB for 1 Gb density (226 × 16 bits) |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports byte/word writes and reads |
| CE# | Chip Enable | Active-low chip select; controls device power state and command latching |
| OE# | Output Enable | Active-low read strobe; gates output drivers during read operations |
| WE# | Write Enable | Active-low write strobe; initiates program/erase command sequences |
| RY/BY# | Ready/Busy Output | Open-drain status indicator; low during embedded operations |
| VCC | Core Supply | 3.0 V ±0.3 V supply for core logic and memory array |
| VIO | I/O Supply | 1.65 V to VCC; decouples I/O voltage from core for mixed-voltage systems |
Key Features
| Feature | Design Value |
|---|---|
| Versatile I/O Voltage Range | VIO supports 1.65 V–VCC, enabling direct interfacing with 1.8 V, 2.5 V, or 3.3 V controllers without level shifters |
| Hardware ECC Engine | Single-bit error correction performed transparently during every read, reducing host CPU overhead and improving system robustness |
| 512-Byte Programming Buffer | Enables 1.5 MBps effective write speed-over 3× faster than single-word programming for firmware updates |
| Uniform 128-kB Sector Architecture | Simplifies firmware partitioning and wear leveling; eliminates complexity of variable-size sector schemes |
| OTP Array with Dual Lock Regions | 1024-byte one-time-programmable space with independent locking allows secure storage of keys and calibration data |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing boot loader and real-time OS kernel in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Primary non-volatile boot memory providing XIP-capable instruction fetch with ≤90 ns latency. Use Value: 20-year data retention and 100K erase cycles ensure firmware integrity over extended service life without refresh. | Use Scenario: Hosting safety-critical boot code for radar processing units in Level 2+ ADAS systems. IC Role / Device Role / Timing Role: AEC-Q100 Grade 2 qualified parallel NOR flash delivering deterministic startup timing under –40°C to +105°C. Use Value: Integrated ECC and sector protection prevent corruption during voltage transients common in automotive power domains. |
| Medical Imaging System BIOS | Telecom Base Station Configuration |
Use Scenario: Holding diagnostic firmware and calibration tables in portable ultrasound devices requiring regulatory compliance. IC Role / Device Role / Timing Role: Secure boot memory with OTP region for storing cryptographic keys and device-specific parameters. Use Value: Dual-lock OTP prevents unauthorized reprogramming while maintaining traceability for FDA audit requirements. | Use Scenario: Storing FPGA configuration bitstreams and protocol stacks in 5G remote radio units deployed outdoors. IC Role / Device Role / Timing Role: High-density, radiation-tolerant flash with suspend/resume for safe field updates during active transmission. Use Value: Page-mode read (15 ns) accelerates FPGA reconfiguration, minimizing service interruption windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GS10TFI010 | Same density and architecture but Industrial grade (–40°C to +85°C); lacks AEC-Q100 qualification | Not suitable for automotive under-hood deployment; lower thermal margin | Select when cost sensitivity outweighs extended temperature requirement |
| MX29GL128FTR2C-90G | 128 Mb density (1/8 capacity); 90 ns access; no integrated ECC; different CFI layout | Requires external ECC logic; insufficient for full boot image in high-end SoCs | Choose only for legacy designs with proven MX29GL footprint and lower density needs |
Compared with S29GL01GS10TFI010, this part adds AEC-Q100 Grade 2 qualification and higher thermal endurance; versus MX29GL128FTR2C-90G, it provides 8× density, on-die ECC, and faster buffer programming-critical for modern boot-time constraints.
Availability
S29GL01GS11TFA010 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for S29GL01GS11TFA010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial chips, with leadership in flash memory and embedded security solutions.
The GL-S family targets high-reliability embedded systems needing fast XIP execution, robust data retention, and automotive-grade qualification-designed specifically for boot code and firmware storage where deterministic timing and long-term stability are mandatory.
FAQ
What is the maximum operating temperature range for S29GL01GS11TFA010?
This part is qualified to AEC-Q100 Grade 2, supporting continuous operation from –40°C to +105°C. It meets automotive under-hood thermal requirements and is validated for industrial applications exceeding standard industrial grade limits. The device uses thermal resistance metrics defined in datasheet section 10.3 and operates reliably within these bounds under specified voltage and load conditions.
Does S29GL01GS11TFA010 support common flash interface (CFI)?
Yes, it implements a full Common Flash Interface parameter table compliant with JEDEC JESD68-A. The CFI data is accessible at fixed address offsets and provides runtime identification of geometry, command sets, and timing parameters. This enables OS-level flash abstraction layers (e.g., MTD in Linux) to auto-configure without hard-coded assumptions.
How does the 512-byte write buffer improve firmware update performance?
The buffer allows up to 512 bytes (256 words) to be loaded before initiating internal programming, achieving 1.5 MBps effective throughput-more than three times faster than single-word programming. This reduces total update time and minimizes window of vulnerability during field upgrades, especially critical in safety-certified systems where downtime must be strictly bounded.
Can the OTP array be used for secure key storage in cryptographic applications?
Yes, the 1024-byte OTP array includes two independently lockable regions, allowing permanent storage of asymmetric keys, certificates, or calibration data. Once locked, regions cannot be rewritten or read back, satisfying tamper-resistance requirements for FIPS 140-2 Level 2 and ISO 15408 EAL4+ implementations when combined with proper physical board-level protections.
S29GL01GS11TFA010 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-S
- Package/Case:
- 56-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 110 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 56-TSOP
S29GL01GS11TFA010 FAQ
1.How can I place an order for S29GL01GS11TFA010 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL01GS11TFA010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL01GS11TFA010 reliable?
The price and inventory of S29GL01GS11TFA010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL01GS11TFA010 is usually 5 days.
3.What payment methods are accepted for S29GL01GS11TFA010?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL01GS11TFA010 transactions.
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4.How is shipping managed for S29GL01GS11TFA010?
S29GL01GS11TFA010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL01GS11TFA010 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL01GS11TFA010?
For technical support, including S29GL01GS11TFA010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL01GS11TFA010 requirements.
6.How does Aetrix verify that S29GL01GS11TFA010 is sourced from the original manufacturer or authorized distributors?
All S29GL01GS11TFA010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL01GS11TFA010 meets industry standards.
7.What is the process for return or replacement of S29GL01GS11TFA010?
All S29GL01GS11TFA010 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL01GS11TFA010, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL01GS11TFA010 part is unused and in its original packaging.
Return procedure for S29GL01GS11TFA010:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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