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Infineon Technologies S29GL01GT12DHVV13
- Part No.:
- S29GL01GT12DHVV13
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S29GL01GT12DHVV13.pdf
- Description:
- IC FLASH 1GBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,971
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Product details
Overview
S29GL01GT12DHVV13 from Infineon is a 1 Gb (128 MB) parallel NOR flash memory IC with MIRRORBIT™ technology, designed for embedded code storage and XIP execution in industrial and automotive systems. It operates from a single 2.7–3.6 V supply, delivers 100 ns random access time at –40°C to +85°C, supports ×8/×16 data bus configuration, and integrates hardware ECC for single-bit error correction.
For engineers reviewing the S29GL01GT12DHVV13 datasheet, S29GL01GT12DHVV13 pinout, S29GL01GT12DHVV13 application, or S29GL01GT12DHVV13 equivalent, key selection factors include its 512-byte programming buffer, uniform 128-KB sector erase architecture, OTP array with four lockable SSR regions, and AEC-Q100 Grade 3 qualification for automotive use.
Technical Context
This device implements an asynchronous parallel interface with CE#, OE#, and WE# control signals, supporting byte/word boundary addressing and page-mode read operations. Its embedded algorithm controller (EAC) manages program, erase, suspend/resume, and status monitoring without host CPU intervention.
The internal hardware ECC engine corrects single-bit errors on-the-fly during read cycles, while the Common Flash Interface (CFI) table enables standardized software detection and configuration across host platforms. Sector protection includes both volatile (lock bits) and non-volatile (ASP) methods per 128-KB sector.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), enabling full firmware image storage for mid-tier microcontrollers |
| Random Access Time | 100 ns at –40°C to +85°C, supporting real-time XIP execution in industrial controllers |
| Page Access Time | 15 ns, accelerating sequential instruction fetch in boot ROM applications |
| Programming Buffer | 512 bytes, reducing effective write time by up to 4× vs. single-word programming |
| ECC Support | Internal hardware single-bit error correction, eliminating need for external ECC logic |
| Endurance | 100,000 program/erase cycles per sector, suitable for field-upgradable firmware |
| Data Retention | 20 years at +85°C, ensuring long-term reliability in unattended equipment |
Pinout & Package
Package: 56-ball VBU fortified BGA (9 mm × 7 mm), RoHS-compliant, lead-free, with 0.8 mm ball pitch and bottom-side thermal pad for enhanced thermal dissipation in high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 128 MB linear addressing with byte/word alignment |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus configurable as ×8 or ×16 mode via BYTE# signal |
| CE# | Chip Enable | Active-low enable controlling device selection in multi-chip memory subsystems |
| OE# | Output Enable | Active-low control for tri-stating DQ outputs during read operations |
| WE# | Write Enable | Active-low signal initiating internal program/erase algorithms when asserted with valid addresses |
| RY/BY# | Ready/Busy Output | Open-drain status indicator signaling active internal operation (low) or completion (high) |
| VCC | Core Supply | Single 2.7–3.6 V power rail for all read/program/erase functions |
| VIO | I/O Supply | Independent 1.65–VCC voltage rail enabling mixed-voltage system interfacing |
Key Features
| Feature | Design Value |
|---|---|
| Versatile I/O (VIO) | Supports 1.65 V to VCC I/O voltage range, allowing direct connection to 1.8 V, 2.5 V, or 3.3 V host processors without level shifters |
| OTP Array | 2048-byte one-time programmable region with four lockable sectors (SSR0–SSR3), including factory-locked SSR0 and password-protected SSR3 for secure boot keys |
| Suspend/Resume | Allows interrupting erase or program operations to service higher-priority reads, critical for real-time OS environments |
| Advanced Sector Protection | Combines volatile (lock bits) and non-volatile (ASP) protection per 128-KB sector, enabling flexible firmware update partitioning |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing firmware and configuration data in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Non-volatile code storage with XIP capability, delivering sub-100 ns instruction fetch latency to meet deterministic scan cycle timing. Use Value: 20-year data retention and 100,000 erase cycles ensure firmware integrity over 15+ year equipment lifecycles without replacement. | Use Scenario: Holding boot code and safety-critical calibration data for radar and camera ECUs in advanced driver assistance systems. IC Role / Device Role / Timing Role: AEC-Q100 Grade 3 qualified parallel NOR flash providing certified boot path memory with hardware ECC for ASIL-B compliance. Use Value: Internal single-bit ECC eliminates external error-detection overhead, reducing BOM cost and board space in space-constrained ECU modules. |
| Medical Imaging System BIOS | Telecom Base Station Configuration |
Use Scenario: Storing boot firmware and device-specific calibration parameters in MRI and CT scanner mainboards requiring long-term reliability. IC Role / Device Role / Timing Role: High-reliability non-volatile memory with extended temperature support (–40°C to +125°C option), used during cold-start initialization sequences. Use Value: 120 ns max access time at +125°C ensures consistent boot performance even under sustained thermal stress in enclosed chassis. | Use Scenario: Holding FPGA configuration bitstreams and runtime configuration tables in 5G baseband units subject to frequent remote updates. IC Role / Device Role / Timing Role: Parallel flash with 512-byte programming buffer enabling fast field firmware patching without disrupting RF transmission windows. Use Value: Sector erase granularity (128 KB) allows atomic update of individual functional blocks, minimizing downtime during OTA upgrades. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GT12DHVI13 | Same die and features, but packaged in 64-ball LAE BGA (9 mm × 9 mm) instead of VBU | Larger footprint and different thermal pad layout; requires PCB redesign | Select for designs needing better thermal performance and standard BGA reflow compatibility |
| S29GL01GT12DHVV10 | Identical package and pinout, but rated for –40°C to +105°C (Industrial Plus) instead of –40°C to +85°C | Higher temperature margin supports extended ambient operation in sealed enclosures | Select when operating ambient exceeds 85°C or for future-proofing against thermal derating |
Compared with S29GL01GT12DHVV13, the VVI13 variant offers improved thermal management via larger BGA pad area, while the VV10 variant extends operational margin to +105°C - both retain identical timing, ECC, and command-set behavior for drop-in firmware compatibility.
Availability
S29GL01GT12DHVV13 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended product lifecycles.
Supply support for S29GL01GT12DHVV13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for industrial, automotive, and IoT applications.
The GL-T family targets high-reliability embedded systems requiring fast XIP execution, robust data retention, and automotive-grade qualification - balancing density, speed, and endurance in parallel NOR flash.
FAQ
Is S29GL01GT12DHVV13 pin-compatible with earlier S29GLxxxT series devices?
Yes - it maintains identical pinout, signal definitions, and command set with prior GL-T generation devices such as S29GL512T, enabling backward-compatible PCB reuse. The VBU package footprint matches legacy 56-ball FBGA variants, and all control signals (CE#, OE#, WE#, RY/BY#) retain identical timing and electrical behavior per datasheet Rev. *M.
Does this device support both ×8 and ×16 data bus modes?
Yes - the device automatically detects bus width via the BYTE# signal: asserted low enables ×8 mode (DQ0–DQ7 only), while high configures ×16 mode (DQ0–DQ15 active). Address lines A0–A21 remain fully utilized in both modes, with A0 ignored in ×16 mode per JEDEC JESD21-C specification.
What is the function of the SSR0–SSR3 regions in the OTP array?
SSR0–SSR3 are four independent 512-byte sectors within the 2048-byte OTP array. SSR0 is factory-locked and permanently read-only; SSR3 supports password-based read protection; SSR1 and SSR2 are user-lockable via dedicated commands. These regions store immutable security keys, calibration data, or device identifiers resistant to field overwrite.
How does the Ready/Busy# (RY/BY#) pin behave during suspend operations?
When a suspend command is issued during program or erase, RY/BY# transitions high within 100 ns to indicate readiness for read access, while internal operation pauses. After resume, it returns low until completion. This enables deterministic interrupt servicing without polling or timeout loops in RTOS-based firmware.
S29GL01GT12DHVV13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (9x9)
S29GL01GT12DHVV13 FAQ
1.How can I place an order for S29GL01GT12DHVV13 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL01GT12DHVV13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL01GT12DHVV13 reliable?
The price and inventory of S29GL01GT12DHVV13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL01GT12DHVV13 is usually 5 days.
3.What payment methods are accepted for S29GL01GT12DHVV13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL01GT12DHVV13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL01GT12DHVV13?
S29GL01GT12DHVV13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL01GT12DHVV13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL01GT12DHVV13?
For technical support, including S29GL01GT12DHVV13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL01GT12DHVV13 requirements.
6.How does Aetrix verify that S29GL01GT12DHVV13 is sourced from the original manufacturer or authorized distributors?
All S29GL01GT12DHVV13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL01GT12DHVV13 meets industry standards.
7.What is the process for return or replacement of S29GL01GT12DHVV13?
All S29GL01GT12DHVV13 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL01GT12DHVV13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL01GT12DHVV13 part is unused and in its original packaging.
Return procedure for S29GL01GT12DHVV13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL01GT12DHVV13 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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