Infineon Technologies S29GL064S70FHI013

Overview

S29GL064S70FHI013 from Infineon is a 64 Mb (8 MB) parallel NOR flash memory with 3.0 V single-supply operation, 70 ns access time, 128-word write buffer, internal hardware ECC for single-bit correction, and secure silicon region with factory-programmed 128-word electronic serial number. It serves as boot code storage in industrial control systems requiring AEC-Q100 Grade 2 qualification (–40°C to +105°C).

For engineers reviewing the S29GL064S70FHI013 datasheet, S29GL064S70FHI013 pinout, S29GL064S70FHI013 application, or S29GL064S70FHI013 equivalent, key selection criteria include JEDEC-compliant command set, uniform 64-KB sector architecture, VIO-referenced I/O (1.65 V to VCC), hardware reset (RESET#), and WP#/ACC-enabled sector protection.

Technical Context

This device implements MIRRORBIT™ floating-gate technology on a 65-nm process, enabling simultaneous hot-hole erase and hot-electron programming across uniform 64-KB sectors. It supports byte/word configuration via BYTE# input and uses command-latched addressing for erase and program operations.

Hardware features include dedicated RY/BY# status output, low-VCC write inhibition, and Erase/Program Suspend/Resume functionality-allowing concurrent read access to unprotected sectors during background operations. The Secure Silicon Region is permanently locked post-configuration and inaccessible to standard command sequences.

Key Specifications

Pinout & Package

Package: 48-lead TSOP (Type I, standard pitch), RoHS-compliant, industrial-plus temperature grade (–40°C to +105°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash applications.

Compared with S29GL064S90FHI013, the -70FHI013 delivers tighter timing for deterministic boot latency; versus MX29GL640EHTI-90G, it provides integrated security primitives and superior error resilience without host firmware overhead.

Availability

S29GL064S70FHI013 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended product lifecycles.

Supply support for S29GL064S70FHI013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions.

The GL-S MIRRORBIT™ flash product line targets mission-critical embedded systems requiring long-term data retention, robust sector protection, and AEC-Q100 qualified operation in harsh thermal environments.

FAQ

What is the function of the VIO pin on S29GL064S70FHI013?

The VIO pin sets the voltage reference for all input and output signal thresholds-including address, control, and DQ lines-enabling interoperability with mixed-voltage host systems. It operates independently from VCC and must be supplied within 1.65 V to VCC. This decoupling allows the device to interface reliably with 1.8 V or 3.3 V logic families without level shifters.

Does S29GL064S70FHI013 support byte-wide data access?

Yes, the device supports 8-bit data access when the BYTE# pin is asserted low, configuring DQ0–DQ7 as the active data bus. In this mode, the upper address bits (A0–A20) map to byte-aligned locations, and all command sequences remain fully functional. This flexibility simplifies integration into 8-bit microcontroller systems without sacrificing density or reliability.

How is the Secure Silicon Region protected after programming?

The Secure Silicon Region becomes permanently read-only once the PPB (Persistent Protection Bit) is locked via the Persistent Sector Protection command sequence. No subsequent command-including chip erase or unlock bypass-can modify its contents. Physical readout is possible only through standard array reads; no debug interface or backdoor access exists, satisfying tamper-resistant requirements for device identity and cryptographic key storage.

Can Erase Suspend be used during a Chip Erase operation?

No-Erase Suspend is supported only for Sector Erase commands, not Chip Erase. During Chip Erase, the entire array is erased simultaneously and cannot be interrupted. Attempting an Erase Suspend command during Chip Erase has no effect and leaves the operation running to completion. For partial updates requiring concurrency, use Sector Erase with Suspend/Resume instead.