Infineon Technologies S29GL064S80FHV030
- Part No.:
- S29GL064S80FHV030
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S29GL064S80FHV030.pdf
- Description:
- IC FLASH 64MBIT PARALLEL 64FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,395
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S29GL064S80FHV030 from Infineon is a 64 Mb (8 MB) parallel NOR flash memory with 3.0 V single-supply operation, 70 ns access time, 128-word write buffer, internal hardware ECC for single-bit correction, and 100,000 erase cycles per sector - deployed in industrial embedded boot storage and firmware code execution.
For engineers reviewing the S29GL064S80FHV030 datasheet, S29GL064S80FHV030 pinout, S29GL064S80FHV030 application, or S29GL064S80FHV030 equivalent, key selection criteria include uniform 64-KB sector architecture, VIO-referenced I/O (1.65–VCC), AEC-Q100 Grade 2 qualification, and TSOP-48 package compatibility with legacy 16-bit bus systems.
Technical Context
This device implements MIRRORBIT™ floating-gate technology on a 65-nm process, enabling simultaneous hot-hole erase and hot-electron programming across uniform 64-KB sectors. It supports byte/word configuration via BYTE# input and uses JEDEC-standard command sets including Unlock Bypass and Program/Erase Suspend/Resume.
Hardware protection includes low-VCC write inhibit, WP#/ACC-controlled first/last sector lock, RESET#-driven hard reset, and RY/BY# status signaling. The Secure Silicon Region provides factory- or customer-programmable 256-byte permanent storage with irreversible locking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mb (4,194,304 words × 16 bits), organized as 128 uniform 64-KB sectors |
| Access Time | 70 ns - enables direct XIP (execute-in-place) from flash in real-time microcontroller boot sequences |
| Write Buffer Size | 128-word (256-byte) - reduces multi-word programming overhead by >60% vs. single-word writes |
| ECC Capability | Internal hardware single-bit error correction - eliminates need for external ECC logic in safety-critical firmware storage |
| VIO Range | 1.65 V to VCC - allows flexible I/O voltage scaling independent of core VCC for mixed-voltage system interfacing |
| Endurance | 100,000 erase cycles per sector - supports field firmware updates over 10+ years in industrial controllers |
| Data Retention | 20 years typical at +85°C - validated for automotive ECU storage under thermal stress conditions |
Pinout & Package
Package: 48-lead TSOP (Type 1, standard thickness), RoHS-compliant, industrial temperature range (–40°C to +85°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 4-Mword addressing; A0 selects LSB in word mode |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; BYTE# controls 8-bit/16-bit mode selection |
| CE# | Chip Enable | Active-low chip select; must be asserted before WE# or OE# for valid bus cycle |
| OE# | Output Enable | Active-low read control; gates output drivers without affecting internal state |
| WE# | Write Enable | Active-low write control; latches address/data during command or programming cycles |
| RESET# | Hardware Reset | Asynchronous active-low reset; terminates ongoing program/erase and returns to read mode |
| RY/BY# | Ready/Busy Output | Open-drain status flag indicating active program/erase; used for polling or interrupt-driven timing |
| WP#/ACC | Write Protect / Accelerated Program | Low = sector lock; high-voltage pulse = accelerated programming for production line throughput |
Key Features
| Feature | Design Value |
|---|---|
| Uniform Sector Architecture | 128 × 64-KB sectors - simplifies firmware partitioning and OTA update management in resource-constrained MCUs |
| Program/Erase Suspend | Pause active programming/erasing to service higher-priority reads - enables real-time response in multitasking boot loaders |
| Secure Silicon Region | 256-byte factory-lockable area with electronic serial number - provides immutable device identity for secure boot key binding |
| Common Flash Interface (CFI) | JEDEC-compliant query table - enables automatic flash detection and driver configuration in Linux/U-Boot environments |
| Unlock Bypass Mode | Two-cycle instead of four-cycle programming sequence - cuts firmware patch time by ~50% in manufacturing test flows |
Applications
| Industrial PLC Firmware Storage | Automotive Instrument Cluster Boot Memory |
|---|---|
Use Scenario: Storing boot code and configuration parameters in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Primary nonvolatile code storage with XIP-capable 70 ns access for deterministic MCU startup. Use Value: 20-year data retention and 100K erase cycles ensure firmware integrity across 15+ year product lifecycles without refresh. | Use Scenario: Holding calibrated display firmware and safety-critical boot images in automotive digital instrument clusters. IC Role / Device Role / Timing Role: AEC-Q100 Grade 2 qualified boot memory with hardware reset and RY/BY# status for fail-safe initialization. Use Value: Secure Silicon Region stores unique VIN-linked calibration data, preventing unauthorized firmware cloning. |
| Medical Diagnostic Equipment BIOS | Network Router Bootloader Storage |
Use Scenario: Hosting BIOS and FPGA configuration bitstreams in Class II medical imaging devices requiring regulatory traceability. IC Role / Device Role / Timing Role: CFI-compliant flash enabling automated driver enumeration and version-controlled firmware updates. Use Value: Password sector protection prevents accidental overwrite of FDA-approved diagnostic algorithms during service. | Use Scenario: Storing U-Boot bootloader and kernel image in carrier-grade edge routers with remote firmware update capability. IC Role / Device Role / Timing Role: Parallel NOR interface with Unlock Bypass and 128-word write buffer accelerating field firmware patches. Use Value: Erase suspend/resume allows background OTA updates without interrupting packet forwarding latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL064S90FHV030 | 90 ns access time, same density/package - slower timing but lower power consumption in standby (35 µA) | Preferred for battery-backed systems where boot speed < 100 ns is acceptable | Select when power budget dominates over boot latency; not drop-in compatible due to timing parameter changes |
| MX29GL640EHTI-90G | Macronix 64 Mb parallel NOR, 90 ns, no built-in ECC, no Secure Silicon Region | Lacks hardware ECC and secure ID - requires external error handling and key management | Choose only if cost sensitivity outweighs functional safety requirements and secure identity needs |
Compared with S29GL064S90FHV030 and MX29GL640EHTI-90G, the S29GL064S80FHV030 uniquely delivers 70 ns performance with integrated ECC and factory-programmable secure silicon - critical for automotive and industrial systems requiring both speed and tamper resistance.
Availability
S29GL064S80FHV030 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive instrument cluster boot memory, and medical diagnostic equipment BIOS requiring stable component supply across extended product lifecycles.
Supply support for S29GL064S80FHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and secure embedded solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The GL-S MIRRORBIT™ flash product line targets high-reliability embedded systems requiring long-term firmware storage, secure boot, and AEC-Q100 compliance - optimized for deterministic boot timing and field-upgrade resilience.
FAQ
What is the function of the WP#/ACC pin on S29GL064S80FHV030?
The WP#/ACC pin serves dual roles: when held low, it permanently protects the first or last sector from program/erase operations; when pulsed with 5.5 V, it enables accelerated programming for high-throughput manufacturing. This dual functionality eliminates need for separate hardware write-protect jumpers or external HV generators in production test fixtures.
Does S29GL064S80FHV030 support byte-level writes?
No - it operates exclusively in word (16-bit) mode or configurable 8-bit mode via BYTE# input, but does not support true byte-level programming. Each write operation affects one or more 16-bit words; partial-word updates require full-word read-modify-write sequences managed by host firmware.
How is the Secure Silicon Region programmed and locked?
The Secure Silicon Region is programmed using the Enter/Exit Secure Silicon Region command sequence (0x00–0x07), then permanently locked via the PPB lock bit. Once locked, no further writes or erases are possible - even with reset or power cycle. Factory programming occurs during wafer sort; customer programming requires dedicated command execution in-system.
Can S29GL064S80FHV030 operate with VIO = 1.8 V while VCC = 3.0 V?
Yes - VIO is independently configurable from 1.65 V to VCC, allowing 1.8 V I/O interfacing with 3.0 V core operation. This enables direct connection to 1.8 V FPGAs or low-voltage MCUs without level shifters, provided all address/data/control signals reference VIO and meet setup/hold timing at that voltage.
S29GL064S80FHV030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-S
- Package/Case:
- 64-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8, 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 80 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (13x11)
S29GL064S80FHV030 FAQ
1.How can I place an order for S29GL064S80FHV030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL064S80FHV030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL064S80FHV030 reliable?
The price and inventory of S29GL064S80FHV030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL064S80FHV030 is usually 5 days.
3.What payment methods are accepted for S29GL064S80FHV030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL064S80FHV030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL064S80FHV030?
S29GL064S80FHV030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL064S80FHV030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL064S80FHV030?
For technical support, including S29GL064S80FHV030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL064S80FHV030 requirements.
6.How does Aetrix verify that S29GL064S80FHV030 is sourced from the original manufacturer or authorized distributors?
All S29GL064S80FHV030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL064S80FHV030 meets industry standards.
7.What is the process for return or replacement of S29GL064S80FHV030?
All S29GL064S80FHV030 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL064S80FHV030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL064S80FHV030 part is unused and in its original packaging.
Return procedure for S29GL064S80FHV030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL064S80FHV030 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

