Infineon Technologies S29GL128P10FFI022

Overview

S29GL128P10FFI022 from Cypress Semiconductor is a 128 Mbit (16 MB) 3.0 V-only Page Flash memory IC fabricated on 90 nm MirrorBit process technology, featuring 128 uniform 64 Kword sectors, 25 ns page access time, and 90 ns random access time under regulated VCC. It operates across –40°C to +85°C industrial temperature range in a 64-ball Fortified BGA (LAA064) package and supports VersatileI/O™ with VIO = 1.65–VCC for flexible I/O voltage control - used in embedded boot code storage for industrial HMIs and network edge controllers.

For engineers reviewing the S29GL128P10FFI022 datasheet, S29GL128P10FFI022 pinout, S29GL128P10FFI022 application, or S29GL128P10FFI022 equivalent, key selection criteria include sector erase endurance (100,000 cycles), secured silicon sector with factory-programmable 128-word serial number, CFI compliance, and hardware write protection via WP#/ACC input with VHH acceleration.

Technical Context

This device implements a synchronous/non-volatile flash architecture with dual-mode data bus (word/byte via BYTE#), embedded program/erase algorithms, and suspend/resume capability for real-time interrupt handling during flash operations. Its block diagram integrates X/Y decoders, erase/PGM voltage generators, command register, and state control logic - enabling deterministic timing for boot code execution and firmware updates.

The VersatileI/O™ interface decouples I/O voltage (VIO) from core supply (VCC), allowing operation with 1.65–VCC I/O levels while maintaining 2.7–3.6 V VCC range. RY/BY# output provides cycle completion status, and RESET# enables hardware-initiated recovery to read mode - critical for fail-safe boot recovery in automotive ECUs and industrial PLCs.

Key Specifications

Pinout & Package

Package: 64-ball Fortified BGA (LAA064), 11 mm × 13 mm, 1.0 mm pitch, Pb-free (RoHS compliant). Ball grid layout matches JEDEC MO-245 standard with dedicated power/ground distribution and signal isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Page Flash memory applications.

Compared with S29GL128S10FFI020, this part offers superior I/O voltage adaptability and factory-secured identity; versus MX29GL128FPTI-90G, it delivers integrated security and mixed-voltage support at modest premium - justifying use in regulated medical and industrial deployments.

Availability

S29GL128P10FFI022 is available at Aetrix Electronics and suitable for industrial HMI boot storage, network edge router firmware, and automotive body control module applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for S29GL128P10FFI022 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a global leader in embedded solutions, specializing in high-reliability non-volatile memory, PSoC programmable systems-on-chip, and USB-C/power delivery ICs.

The S29GL-P series was designed specifically for embedded systems requiring robust, high-density boot code storage with industrial temperature tolerance, hardware security, and mixed-voltage interoperability - targeting automotive, industrial automation, and networking infrastructure.

FAQ

What is the function of the VIO pin on S29GL128P10FFI022?

The VIO pin sets input voltage thresholds and output drive levels independently of VCC, enabling operation with I/O voltages from 1.65 V up to VCC (2.7–3.6 V). This eliminates external level shifters when interfacing with 1.8 V or 2.5 V microcontrollers while maintaining full 3.3 V core performance - confirmed in Section 7.3 of the datasheet.

Does S29GL128P10FFI022 support hardware write protection for specific sectors?

Yes - WP#/ACC input provides hardware-level protection for the highest or lowest 64 Kword sector depending on model number configuration (R1/R2/V1/V2). When WP# is pulled low, those sectors are locked against program/erase commands regardless of software protection settings - verified in Section 8.6 and Ordering Information table.

Can the secured silicon sector be programmed after device shipment?

Yes - the 128-word secured silicon sector can be programmed and permanently locked either at the factory or by the end customer using standard CFI commands. Once locked, the sector becomes read-only and immune to further programming or erasure - detailed in Sections 10.2 and 12.1 of the datasheet.

What is the maximum effective programming speed using the write buffer?

With VHH applied to WP#/ACC, the 32-word write buffer achieves 13.5 µs per word effective programming time - yielding ~2.37 MB/s sustained write throughput for full-buffer operations. This is 4.4× faster than single-word programming (60 µs/word) - specified in "Program & Erase Times" on page 3 of the datasheet.