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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S29GL128P11TFIV23

Name: S29GL128P11TFIV23
Brand: Infineon Technologies
SKU: S29GL128P11TFIV23
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S29GL128P11TFIV23

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 56-TFSOP (0.724", 18.40mm Width)

Datasheet:: S29GL128P11TFIV23.pdf

Description:: IC FLASH 128MBIT PARALLEL 56TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:3,180

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Product details

Overview

S29GL128P11TFIV23 from Cypress Semiconductor is a 128 Mbit (16 MB) 3 V page-mode NOR Flash memory fabricated on 90 nm MirrorBit process technology, featuring 128 uniform 64 Kword sectors, 25 ns page access time, and 90 ns random access time under regulated VCC. It supports VersatileI/O™ with VIO range 1.65–VCC, 32-word write buffer, and Secured Silicon Sector with factory-programmable 128-word serial number - deployed in industrial embedded controllers requiring reliable nonvolatile code storage.

For engineers reviewing the S29GL128P11TFIV23 datasheet, S29GL128P11TFIV23 pinout, S29GL128P11TFIV23 application, or S29GL128P11TFIV23 equivalent, key selection criteria include sector erase endurance (100,000 cycles), data retention (20 years), TSOP-56 package compatibility, VIO-configurable I/O voltage, and CFI-compliant interface for bootloader and firmware update systems.

Technical Context

This device implements a synchronous/asynchronous hybrid command-set architecture with dedicated state control logic, internal voltage generators for erase/program (VPP), and hardware reset (RESET#) with automatic recovery to read mode. Its VersatileI/O™ design decouples I/O voltage (VIO) from core supply (VCC), enabling interoperability with 1.8 V, 2.5 V, or 3.3 V host buses while maintaining full 3 V core operation.

The memory array uses a split-gate MirrorBit cell structure with dual-bit per cell storage, supporting byte/word configuration via BYTE# input and page read (8-word buffer) or write buffer (32-word) modes. Embedded algorithms manage sector erase and word programming with status reporting via RY/BY# and internal status bits.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	128 Mbit (16 MB) organized as 2,097,152 × 8 or 1,048,576 × 16
Access Time	90 ns random access (regulated VCC = 3.0–3.6 V); 25 ns page access
Write Buffer Size	32 words (64 bytes) per single program command - reduces multi-word update latency by ~4× vs. standard byte programming
Sector Architecture	128 uniform sectors of 64 Kwords (128 Kbytes) each - enables granular firmware partitioning and OTA update rollback
Erase Endurance	100,000 program/erase cycles per sector - validated for industrial control log storage and field-upgrade partitions
Data Retention	20 years at +85°C - meets extended lifecycle requirements for medical and transportation electronics
Supply Voltage	VCC = 2.7–3.6 V; VIO = 1.65–VCC - supports mixed-voltage system interfacing without level shifters

Pinout & Package

Package: 56-pin Thin Small Outline Package (TSOP-II, standard pinout, Pb-free, industrial temperature grade).

Pin/Terminal	Circuit Role	Design Meaning
A22–A0	Address Inputs	23-bit address bus (A22–A0) selects 128 Mbit memory location; A22 is MSB for this density
DQ15/A-1	Bi-directional Data / Byte Mode LSB	In word mode: DQ15 carries MSB data; in byte mode (BYTE# = VIL): A-1 serves as LSB address for 8-bit access
CE#, OE#, WE#	Chip/Output/Write Enable	Standard asynchronous control trio - CE# enables device, OE# gates output drivers, WE# initiates write/erase
RY/BY#	Ready/Busy Output	Active-low open-drain signal - low during embedded erase/program; high-Z when operation complete
WP#/ACC	Write Protect / Acceleration Input	VIL: locks top/bottom sector; VHH: enables unlock-bypass programming at accelerated throughput
RESET#	Hardware Reset Input	Asynchronous active-low reset - forces device into read mode and aborts ongoing operations
VIO	Versatile I/O Supply	Independent I/O voltage reference (1.65–VCC) - sets DQ, address, and control pin thresholds without affecting core logic

Key Features

Feature	Design Value
90 nm MirrorBit Process	Enables higher density and lower power vs. older 110 nm Flash - reduces active read current to 30 mA @ 5 MHz
Secured Silicon Sector	128-word (256-byte) factory-lockable region stores immutable electronic serial number - used for device authentication and license binding
Advanced Sector Protection	Persistent lock bits + password method - prevents unauthorized firmware overwrite while allowing field reconfiguration via authenticated commands
Suspend/Resume Commands	Pauses erase or program mid-operation to service high-priority reads - critical for real-time OS bootloaders and diagnostic firmware
CFI Compliance	Standardized JEDEC JESD68 interface - enables auto-detection and parameter retrieval by generic flash programmers and BIOS implementations

Applications

Industrial PLC Firmware Storage

Automotive Instrument Cluster Boot Memory

Use Scenario: Nonvolatile storage of ladder logic firmware and configuration parameters in programmable logic controllers operating continuously at –40°C to +85°C.

IC Role / Device Role / Timing Role: Primary boot code and application image storage with hardware reset recovery and sector-level update isolation.

Use Value: 100,000 erase cycles and 20-year retention ensure >15-year field deployment without refresh; WP#/ACC pin enables production-line programming acceleration.

Use Scenario: Storing calibrated gauge graphics, driver warning logic, and CAN message lookup tables in digital dashboards with ASIL-B functional safety constraints.

IC Role / Device Role / Timing Role: Code-execution memory mapped directly to MCU address space; RY/BY# synchronizes display updates with firmware integrity checks.

Use Value: Page read buffer (8-word) delivers <25 ns access to sequential GUI assets; Secured Silicon Sector binds calibration data to unique vehicle VIN.

Medical Imaging System Configuration

Network Router Bootloader Storage

Use Scenario: Holding DICOM protocol stacks, sensor calibration profiles, and regulatory audit logs in portable ultrasound and X-ray devices requiring FDA 21 CFR Part 11 compliance.

IC Role / Device Role / Timing Role: Trusted configuration store with write-protection enforced by hardware (WP#) and software (password lock bits).

Use Value: Persistent protection bits prevent accidental overwrite during field service; CFI interface allows automated verification during regulatory validation tests.

Use Scenario: Hosting U-Boot or OpenWrt bootloader images and fail-safe recovery partitions in enterprise-grade wired/wireless routers with zero-downtime firmware upgrades.

IC Role / Device Role / Timing Role: Dual-sector protected boot memory - one sector holds active image, the other holds fallback version managed via suspend/resume during OTA patching.

Use Value: 32-word write buffer cuts firmware commit time by 75% vs. byte programming; uniform 128 KB sectors simplify partition alignment for YAFFS2/JFFS2 file systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR Flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
S29GL128S11TFIV20	Same density and package, but 65 nm Eclipse process; 110 ns random access; no Secured Silicon Sector	Lacks factory-programmable serial number and persistent lock bits - unsuitable for device authentication or secure provisioning	Select only when cost reduction outweighs security and long-term retention needs
MX29GL128FPTI-90G	128 Mbit TSOP-56, 90 ns access, 100K erase cycles; Macronix CFI-compliant but no VersatileI/O or WP#/ACC acceleration	No VIO support - requires external level shifting for 1.8 V hosts; lacks hardware-accelerated programming mode	Choose for legacy 3.3 V-only systems where I/O flexibility and production throughput are secondary

Compared with S29GL128S11TFIV20 and MX29GL128FPTI-90G, the S29GL128P11TFIV23 uniquely combines industrial-grade endurance, VIO-configurable I/O, hardware-accelerated programming, and cryptographically bindable silicon identity - making it optimal for secure, long-lifecycle embedded firmware storage.

Availability

S29GL128P11TFIV23 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive instrument cluster boot memory, and medical imaging system configuration requiring stable component supply across extended product lifecycles.

Supply support for S29GL128P11TFIV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability nonvolatile memory and microcontroller solutions for industrial, automotive, and communications markets.

The S29GL-P series targets embedded systems needing deterministic boot performance, field-upgradable firmware, and hardware-enforced data integrity - optimized for code shadowing, secure boot, and mission-critical configuration storage.

FAQ

What is the function of the VIO pin on S29GL128P11TFIV23?

VIO sets the voltage threshold for all input and output signals (address, control, DQ), independent of VCC. With VIO ranging from 1.65 V to VCC (2.7–3.6 V), the device interfaces natively with 1.8 V, 2.5 V, or 3.3 V host processors without external level shifters - reducing BOM count and layout complexity in mixed-voltage designs.

Does S29GL128P11TFIV23 support both byte and word data configurations?

Yes. The BYTE# input selects bus width: when pulled low, DQ0–DQ7 are active and DQ15/A-1 functions as address bit A-1 for 8-bit access; when high, DQ0–DQ15 operate as a 16-bit data bus. This dual-mode capability enables flexible integration with 8-bit microcontrollers or 16-bit DSPs without redesigning the memory interface.

How does the Secured Silicon Sector enhance system security?

The Secured Silicon Sector is a dedicated 128-word (256-byte) region that can be factory-programmed with a unique 8-word electronic serial number and permanently locked. Once locked, its contents cannot be erased or rewritten - providing tamper-resistant device identification for license enforcement, firmware binding, and anti-cloning measures in regulated equipment.

Can S29GL128P11TFIV23 be used in systems requiring frequent firmware updates?

Yes. Its 32-word write buffer enables up to 64-byte programming in one command, cutting effective programming time to 13.5 µs/word with VHH acceleration. Combined with suspend/resume capability and 100,000 erase cycles per sector, it supports robust over-the-air (OTA) update mechanisms in routers, gateways, and industrial edge controllers without compromising reliability.

S29GL128P11TFIV23 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: GL-P

Package/Case:: 56-TFSOP (0.724", 18.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 128Mbit

Memory Organization:: 16M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 110ns

Access Time:: 110 ns

Voltage - Supply:: 1.65V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 56-TSOP

S29GL128P11TFIV23 FAQ

1.How can I place an order for S29GL128P11TFIV23 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29GL128P11TFIV23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29GL128P11TFIV23 reliable?

The price and inventory of S29GL128P11TFIV23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL128P11TFIV23 is usually 5 days.

3.What payment methods are accepted for S29GL128P11TFIV23?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL128P11TFIV23 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29GL128P11TFIV23?

S29GL128P11TFIV23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29GL128P11TFIV23 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29GL128P11TFIV23?

For technical support, including S29GL128P11TFIV23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL128P11TFIV23 requirements.

6.How does Aetrix verify that S29GL128P11TFIV23 is sourced from the original manufacturer or authorized distributors?

All S29GL128P11TFIV23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL128P11TFIV23 meets industry standards.

7.What is the process for return or replacement of S29GL128P11TFIV23?

All S29GL128P11TFIV23 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL128P11TFIV23, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29GL128P11TFIV23 part is unused and in its original packaging.

Return procedure for S29GL128P11TFIV23:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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