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Infineon Technologies S29GL128S11DHBV10

Name: S29GL128S11DHBV10
Brand: Infineon Technologies
SKU: S29GL128S11DHBV10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S29GL128S11DHBV10

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 64-LBGA

Datasheet:: S29GL128S11DHBV10.pdf

Description:: IC FLASH 128MBIT PARALLEL 64FBGA

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Product details

Overview

S29GL128S11DHBV10 from Infineon is a 128 Mb (16 MB), ×16 asynchronous parallel NOR flash memory with 65 nm MIRRORBIT™ Eclipse technology, 3.0 V core supply (2.7–3.6 V), 90 ns random access time, and 15 ns page access time. It integrates hardware ECC for single-bit error correction, 128-kbyte uniform sector erase, and a 512-byte write buffer - deployed in automotive instrument clusters requiring AEC-Q100 Grade 2 (–40°C to +105°C) operation and fast XIP boot code execution.

For engineers reviewing the S29GL128S11DHBV10 datasheet, S29GL128S11DHBV10 pinout, S29GL128S11DHBV10 application, or S29GL128S11DHBV10 equivalent, key selection criteria include verified 128-kbyte sector architecture, Versatile I/O support (1.65 V to VCC), CFI-compliant interface, OTP array with dual lockable regions, and industrial/automotive temperature grade validation per official Infineon documentation.

Technical Context

This device implements an asynchronous parallel interface with word-aligned addressing (A0–A22), supports both standard and page-mode reads, and uses embedded algorithm controller (EAC) logic to manage program/erase operations without external timing control. Its internal ECC engine operates transparently during read cycles and corrects single-bit errors in real time.

The GL-S architecture separates command decoding, status monitoring (via status register, data polling, and RY/BY# pin), and sector protection (volatile/non-volatile ASP) into dedicated hardware blocks. The 512-byte programming buffer enables burst writes aligned to 32-byte boundaries, reducing effective programming time versus byte-by-byte methods.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	128 Mb (16 MB), organized as 1,048,576 × 16-bit words - defines maximum firmware image size and boot partition capacity.
Random access time (tACC)	90 ns at VCC = VIO - determines worst-case latency for first-word fetch in XIP execution.
Page access time (tPACC)	15 ns - enables sub-30 ns subsequent word reads within same 32-byte aligned page, critical for tight instruction loops.
ECC capability	Single-bit error correction via on-die hardware - eliminates need for external ECC logic in safety-critical boot paths.
Sector size & count	Uniform 128 kbyte sectors (128 total) - simplifies firmware update partitioning and wear leveling implementation.
Write buffer size	512 bytes - allows full-sector programming in ≤256 bus cycles, improving write throughput by >3× vs. single-word writes.
Operating temperature	AEC-Q100 Grade 2 (–40°C to +105°C) - qualified for under-hood automotive ECUs with extended thermal envelope.

Pinout & Package

Package: 56-ball VBU Fortified BGA (9 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Pin/Terminal	Circuit Role	Design Meaning
A0–A22	Address inputs	Word-aligned address bus (23 bits); A22 is MSB for 128 Mb density - no byte addressing support.
DQ0–DQ15	Data I/O bus	16-bit bidirectional data path; supports Versatile I/O (VIO = 1.65 V to VCC) for mixed-voltage system interfacing.
CE#	Chip enable	Active-low device select; tCE = 90 ns max - defines minimum chip-select assertion window before valid data.
OE#	Output enable	Active-low read strobe; tOE = 25 ns max - controls output driver activation timing relative to address setup.
WE#	Write enable	Active-low write strobe; initiates command latching or data loading into internal registers.
RY/BY#	Ready/Busy indicator	Open-drain output; low during embedded program/erase - enables hardware polling without CPU intervention.
RESET#	Hardware reset	Active-low asynchronous reset; forces device into reading state and clears internal command registers.

Key Features

Feature	Design Value
65 nm MIRRORBIT™ Eclipse process	Enables 100,000 program/erase cycles and 20-year data retention while reducing die size and active power vs. legacy 90 nm nodes.
Asynchronous 32-byte page read	Reduces average instruction fetch latency by >60% compared to full random access when executing sequential code from flash.
Separate 1024-byte OTP array	Provides secure storage for calibration data, cryptographic keys, or unique device identifiers with two independently lockable regions.
Advanced Sector Protection (ASP)	Supports both volatile (power-cycle reset) and non-volatile (permanent) locking per sector - prevents accidental firmware overwrite in field-deployed units.
Common Flash Interface (CFI)	Enables automatic detection of geometry, timing, and command set by host bootloader - eliminates hard-coded flash initialization sequences.

Applications

Automotive Instrument Cluster

Industrial PLC Firmware Storage

Use Scenario: Storing calibrated gauge graphics, boot loader, and real-time OS kernel in a space-constrained cluster ECU.

IC Role / Device Role / Timing Role: Primary non-volatile code storage with XIP capability and AEC-Q100 Grade 2 qualification.

Use Value: 90 ns random access ensures <50 µs boot initialization; 128-kbyte sectors allow atomic firmware updates without runtime corruption risk.

Use Scenario: Holding ladder logic firmware and configuration parameters in a DIN-rail mounted programmable logic controller.

IC Role / Device Role / Timing Role: High-reliability firmware archive with hardware ECC and sector-level write protection.

Use Value: Internal ECC eliminates field failures from bit flips in harsh EMI environments; ASP prevents unauthorized firmware modification during maintenance.

Medical Diagnostic Display Boot Memory

Avionics Data Logger Configuration

Use Scenario: Hosting certified boot firmware and UI assets for FDA-regulated ultrasound display subsystems.

IC Role / Device Role / Timing Role: Safety-critical boot ROM with 20-year data retention and traceable lifecycle management.

Use Value: Non-volatile sector locking ensures immutable boot code; OTP region stores device-specific calibration certificates with hardware-enforced write disable.

Use Scenario: Storing flight parameter mapping tables and sensor calibration coefficients in DO-178C-certified data recorders.

IC Role / Device Role / Timing Role: Secure, long-life configuration store with deterministic erase timing and CFI-based auto-configuration.

Use Value: 477 kBps sector erase rate enables <270 ms full-table reprogramming; CFI table allows host software to validate timing parameters pre-flight.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
S29GL128S10TFI010	Same density and core specs, but 64-ball LAE FBGA (9 mm × 9 mm) package and Industrial (–40°C to +85°C) grade only.	Lacks AEC-Q100 qualification and extended temperature range - unsuitable for under-hood automotive use.	Select only for cost-sensitive industrial control where footprint and thermal margin permit larger package and lower temp grade.
MX29GL128FPTI-90G	128 Mb parallel NOR flash from Macronix; 90 ns tACC, but no integrated ECC and only 100,000 erase cycles (vs. Infineon's 20-year retention guarantee).	No hardware ECC requires external error handling; lacks OTP array and ASP flexibility.	Consider only for legacy designs already using MX29GL series where ECC is managed in software and security requirements are minimal.

Compared with S29GL128S10TFI010, the S29GL128S11DHBV10 provides automotive-grade reliability and smaller VBU BGA footprint; versus MX29GL128FPTI-90G, it delivers hardware ECC, OTP security, and guaranteed 20-year data retention - critical for safety-certified systems.

Availability

S29GL128S11DHBV10 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, medical diagnostic displays, and avionics data loggers requiring stable component supply across extended product lifecycles.

Supply support for S29GL128S11DHBV10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions for mission-critical applications.

The GL-S family targets automotive and industrial embedded systems requiring fast XIP boot performance, long-term data integrity, and AEC-Q100-compliant non-volatile storage - bridging the gap between traditional code-execution and data-storage flash architectures.

FAQ

Does S29GL128S11DHBV10 support byte-level writes?

No. This device operates exclusively on word (16-bit) boundaries. All write operations - including programming and command issuance - require 16-bit data alignment and address increments of 2 bytes. Byte-level access is not supported in hardware or command set, and attempting it results in undefined behavior or bus contention.

What is the function of the STB pin on S29GL128S11DHBV10?

The STB (Strobe) pin is not present on the S29GL128S11DHBV10. It appears only on earlier S29GL-S generation devices (e.g., S29GL-SxxN). This part uses standard CE#/OE#/WE# control signals and does not implement STB-based timing - confirmed by Infineon's 001-98285 Rev. *U datasheet Figure 1 and Pin Description Table.

Can the OTP array be reprogrammed after locking?

No. Once either of the two OTP lock bits is set (via specific unlock-and-program sequence), that 512-byte region becomes permanently read-only. The lock is implemented with one-time fusible elements; no command or voltage condition can reverse the lock state. Unlocking requires factory-level test mode access, not available in production devices.

Is the 512-byte write buffer usable across sector boundaries?

No. The write buffer operates strictly within a single 32-byte page and cannot span sector boundaries. Programming must be initiated within one sector, and all 512 bytes must reside in contiguous addresses belonging to the same 128-kbyte sector. Attempting cross-sector buffered writes triggers abort and status register error flag 0x20 (program suspend).

S29GL128S11DHBV10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: GL-S

Package/Case:: 64-LBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 128Mbit

Memory Organization:: 8M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 60ns

Access Time:: 110 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 105°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 64-FBGA (9x9)

S29GL128S11DHBV10 FAQ

1.How can I place an order for S29GL128S11DHBV10 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29GL128S11DHBV10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29GL128S11DHBV10 reliable?

The price and inventory of S29GL128S11DHBV10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL128S11DHBV10 is usually 5 days.

3.What payment methods are accepted for S29GL128S11DHBV10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL128S11DHBV10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29GL128S11DHBV10?

S29GL128S11DHBV10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29GL128S11DHBV10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29GL128S11DHBV10?

For technical support, including S29GL128S11DHBV10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL128S11DHBV10 requirements.

6.How does Aetrix verify that S29GL128S11DHBV10 is sourced from the original manufacturer or authorized distributors?

All S29GL128S11DHBV10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL128S11DHBV10 meets industry standards.

7.What is the process for return or replacement of S29GL128S11DHBV10?

All S29GL128S11DHBV10 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL128S11DHBV10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29GL128S11DHBV10 part is unused and in its original packaging.

Return procedure for S29GL128S11DHBV10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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