Infineon Technologies S29GL256P90FFCR10
- Part No.:
- S29GL256P90FFCR10
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S29GL256P90FFCR10.pdf
- Description:
- IC FLASH 256MBIT PARALLEL 64FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,538
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S29GL256P90FFCR10 from Cypress Semiconductor is a 256 Mbit (32 MB), 3.0 V-only page-mode NOR Flash memory fabricated on 90 nm MirrorBit process technology, featuring 90 ns random access time, 25 ns page access time, uniform 64 Kword sectors (256 total), and 100,000 erase cycles per sector - deployed in industrial embedded systems for firmware storage and boot code execution.
For engineers reviewing the S29GL256P90FFCR10 datasheet, S29GL256P90FFCR10 pinout, S29GL256P90FFCR10 application, or S29GL256P90FFCR10 equivalent, key selection criteria include VIO-compatible I/O voltage scaling (1.65–VCC), write buffer programming efficiency (64-byte burst), secured silicon sector with factory-programmable ESN, and CFI-compliant interface for host BIOS/UEFI compatibility.
Technical Context
This device operates as a parallel-interface NOR Flash with byte/word configuration selectable via BYTE# input, supporting both standard and page read modes (8-word buffer), and embedded program/erase algorithms managed by internal state control logic and command register sequencing.
It implements VersatileI/O™ architecture where all address, control, and data signal thresholds are referenced to VIO (1.65–VCC), enabling interoperability with mixed-voltage microcontrollers; sector protection uses persistent bits and password methods, while WP#/ACC provides hardware acceleration (VHH) and outermost sector lock independent of software settings.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 256 Mbit (32 MB) organized as 256 × 64 Kword uniform sectors |
| Access Time | 90 ns random access (Regulated VCC), 25 ns page access - enables fast instruction fetch in boot ROM applications |
| Write Buffer | 64-byte (32-word) buffer - reduces effective programming time by >4× vs single-word writes |
| Erase Endurance | 100,000 cycles per sector - supports field firmware updates over product lifetime |
| Data Retention | 20 years typical - ensures long-term reliability in unpowered storage |
| VIO Range | 1.65 V to VCC - allows direct interfacing with 1.8 V or 3.3 V host I/O without level shifters |
| Operating Temp | –40°C to +85°C (Industrial grade) - qualified for automotive and industrial control environments |
Pinout & Package
Package: 64-ball Fortified BGA (LAA064), 11 mm × 13 mm, 1.0 mm pitch, Pb-free (RoHS compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A23–A0 | Address inputs | 24-bit address bus supporting full 32 MB addressing (A23 = MSB) |
| DQ15–DQ0 | Data I/O | 16-bit bidirectional data bus; DQ15/A-1 serves as LSB address in byte mode |
| CE#, OE#, WE# | Chip/Output/Write Enable | Standard parallel Flash control signals; enable hierarchical access timing |
| RY/BY# | Ready/Busy output | Active-low open-drain status indicator for embedded program/erase completion |
| RESET# | Hardware reset | Asynchronous reset that terminates ongoing operations and returns device to read mode |
| WP#/ACC | Write protect / acceleration | VIL locks top/bottom sector; VHH enables unlock-bypass programming for production throughput |
| VIO | Versatile I/O supply | Defines input threshold and output drive levels - decouples I/O voltage from VCC |
| BYTE# | Bus width select | VIL configures 8-bit DQ0–DQ7 operation; VIH enables full 16-bit word mode |
Key Features
| Feature | Design Value |
|---|---|
| Secured Silicon Sector | 256-byte factory-lockable region with 16-byte electronic serial number - enables secure device identity binding |
| Suspend/Resume | Interrupts active program/erase to service high-priority reads - critical for real-time OS coexistence |
| CFI Support | Standardized JEDEC JESD68 interface - enables automatic detection and configuration by BIOS/bootloader |
| Advanced Sector Protection | Password + persistent bit methods - prevents accidental or malicious firmware corruption |
| Automatic Sleep Mode | Enters ultra-low-power standby (<1 µA) after bus inactivity - reduces system idle power |
Applications
| Industrial PLC Firmware Storage | Automotive Instrument Cluster Boot Memory |
|---|---|
Use Scenario: Storing firmware and configuration data in programmable logic controllers operating in harsh factory environments with wide temperature swings and electrical noise. IC Role / Device Role / Timing Role: Primary nonvolatile boot and application code storage with deterministic 90 ns read latency for real-time task scheduling. Use Value: 20-year data retention and 100K erase cycles ensure firmware update viability across 15+ year product lifecycles without replacement. | Use Scenario: Hosting boot code and display graphics assets in digital instrument clusters requiring ASIL-B compatible nonvolatile storage. IC Role / Device Role / Timing Role: CFI-compliant NOR Flash providing verified, executable-in-place (XIP) code execution directly from memory. Use Value: Industrial temperature rating (–40°C to +85°C) and secured silicon sector support cryptographic key binding for secure boot validation. |
| Medical Diagnostic Equipment BIOS | Network Router Boot Image Storage |
Use Scenario: Holding UEFI-compliant BIOS and calibration tables in portable ultrasound and imaging devices subject to strict regulatory traceability requirements. IC Role / Device Role / Timing Role: Trusted, tamper-resistant firmware repository with factory-programmed ESN for audit-ready device identification. Use Value: Secured Silicon Sector allows permanent embedding of unique device ID and calibration signatures - meeting FDA 21 CFR Part 11 compliance needs. | Use Scenario: Storing primary and fallback boot images in enterprise-grade routers requiring rapid failover and field-upgradable firmware. IC Role / Device Role / Timing Role: Dual-image storage medium with hardware-accelerated (VHH) programming for <5 s firmware update cycles. Use Value: Write buffer programming (13.5 µs/word with VHH) cuts full-image reflash time by 70% versus legacy parallel Flash devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NOR Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL256S90TFI01 | TSOP-56 package (vs BGA); identical 90 nm MirrorBit core, same timing and feature set | Preferred for through-hole prototyping or legacy PCB designs with TSOP footprints | Select when board layout lacks BGA rework capability or requires manual soldering accessibility |
| MX29GL256FHI-90G | Macronix equivalent; 90 nm process, 90 ns access, but no VersatileI/O (fixed 3.3 V I/O), no secured silicon sector | Lacks VIO flexibility and secure identity features - unsuitable for secure boot or mixed-voltage hosts | Choose only for cost-sensitive, non-secure applications where VIO and ESN are not required |
Compared with S29GL256S90TFI01, the FFCR10 offers superior board-level density and thermal performance in BGA; versus MX29GL256FHI-90G, it delivers essential security and voltage-scaling capabilities missing in the Macronix part - making it the sole choice for certified industrial and automotive deployments.
Availability
S29GL256P90FFCR10 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive instrument cluster boot memory, and medical diagnostic equipment BIOS requiring stable component supply across extended product lifecycles.
Supply support for S29GL256P90FFCR10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, microcontrollers, and connectivity solutions for industrial, automotive, and computing markets.
The S29GL-P series was designed specifically for embedded systems demanding robust, executable-in-place NOR Flash with advanced security, mixed-voltage interoperability, and long-term data integrity - targeting mission-critical boot and firmware storage.
FAQ
What is the function of the VIO pin on the S29GL256P90FFCR10?
VIO sets the voltage reference for all input thresholds and output drive levels, allowing the device to interface directly with host processors operating at 1.8 V, 2.5 V, or 3.3 V I/O voltages while VCC remains at 3.0–3.6 V. This eliminates external level shifters and simplifies mixed-voltage system design without compromising timing or signal integrity.
Does the S29GL256P90FFCR10 support execute-in-place (XIP) operation?
Yes - its parallel NOR architecture, deterministic 90 ns random access time, and CFI-compliant interface enable direct code execution from flash memory without copying to RAM. This is confirmed by Cypress application notes AN215155 and AN92197, which detail XIP implementation with ARM Cortex-M and PowerPC processors.
How is the secured silicon sector programmed and locked?
The 256-byte secured silicon sector is programmed using standard command sequences (e.g., unlock bypass + program commands) and permanently locked via the Lock Register (address 0x0000). Once locked, the sector becomes read-only and immune to erase or program commands - verified by Cypress's Secure Silicon Programming Flow documentation (AN215154).
Can the S29GL256P90FFCR10 be used in place of older S29GL256N devices?
No - the S29GL256P uses 90 nm MirrorBit process and enhanced VersatileI/O, while the S29GL256N is based on 110 nm technology with fixed 3.3 V I/O and no VIO pin. Pinouts differ (e.g., VIO replaces NC on P-series), and command sets are incompatible due to added features like suspend/resume and advanced protection modes.
S29GL256P90FFCR10 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-P
- Package/Case:
- 64-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 256Mbit
- Memory Organization:
- 32M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (13x11)
S29GL256P90FFCR10 FAQ
1.How can I place an order for S29GL256P90FFCR10 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL256P90FFCR10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL256P90FFCR10 reliable?
The price and inventory of S29GL256P90FFCR10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL256P90FFCR10 is usually 5 days.
3.What payment methods are accepted for S29GL256P90FFCR10?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL256P90FFCR10 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL256P90FFCR10?
S29GL256P90FFCR10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL256P90FFCR10 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL256P90FFCR10?
For technical support, including S29GL256P90FFCR10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL256P90FFCR10 requirements.
6.How does Aetrix verify that S29GL256P90FFCR10 is sourced from the original manufacturer or authorized distributors?
All S29GL256P90FFCR10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL256P90FFCR10 meets industry standards.
7.What is the process for return or replacement of S29GL256P90FFCR10?
All S29GL256P90FFCR10 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL256P90FFCR10, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL256P90FFCR10 part is unused and in its original packaging.
Return procedure for S29GL256P90FFCR10:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL256P90FFCR10 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

