Infineon Technologies S29GL256S11TFV010

Overview

S29GL256S11TFV010 from Infineon is a 256 Mb (32 MB) parallel NOR flash memory IC with 16-bit data bus, fabricated on 65 nm MIRRORBIT™ Eclipse process. It operates from a single 2.7–3.6 V supply, delivers 90 ns random access time and 15 ns page access time, and integrates hardware ECC for single-bit error correction. It is used in boot code storage for industrial microcontrollers requiring fast XIP execution and reliable non-volatile firmware retention.

For engineers reviewing the S29GL256S11TFV010 datasheet, S29GL256S11TFV010 pinout, S29GL256S11TFV010 application, or S29GL256S11TFV010 equivalent, key selection criteria include its 128 kB uniform sector erase granularity, 512-byte write buffer throughput (1.5 MBps), Versatile I/O support (1.65–3.6 V), OTP array for secure configuration, and AEC-Q100 Grade 2 qualification for automotive embedded control units.

Technical Context

This device implements an asynchronous parallel interface with word-aligned addressing (A0–A23), supports both standard and page-mode reads, and uses embedded algorithms for sector erase and buffered programming without external timing control. Its internal state machine handles command execution, status reporting via RY/BY# pin or status register, and automatic ECC generation/correction during read operations.

The GL-S architecture separates address decoding, erase voltage generation, and program voltage regulation into dedicated on-die blocks. Sector protection is managed through volatile (SR bits) and non-volatile (ASP registers) methods, while the 1024-byte OTP array enables one-time secure storage of calibration data or cryptographic keys with dual lockable regions.

Key Specifications

Pinout & Package

Package: 56-ball VBU Fortified BGA (9 mm × 7 mm, 0.8 mm pitch). RoHS-compliant, lead-free, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Compared with S29GL256P11TFV010 and MX29GL256FHT2I-90G, the S29GL256S11TFV010 uniquely combines AEC-Q100 Grade 2 qualification, hardware ECC, Versatile I/O, and OTP security in a single 56-ball VBU package-reducing validation effort and enabling consolidated firmware+security architecture.

Availability

S29GL256S11TFV010 is available at Aetrix Electronics and suitable for automotive engine control units, industrial PLCs, medical imaging boot systems, and telecom base station configuration storage requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for S29GL256S11TFV010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and high-reliability memory solutions, with global manufacturing and quality certifications including IATF 16949 and ISO 9001.

The GL-S family targets automotive and industrial embedded systems needing robust, high-speed parallel NOR flash with integrated reliability features-designed specifically for XIP-capable boot memory in safety-critical environments.

FAQ

What is the maximum operating junction temperature for S29GL256S11TFV010?

The device is rated for operation up to +105°C ambient temperature (AEC-Q100 Grade 2), with a maximum junction temperature of +125°C under specified thermal conditions. Thermal resistance (θJA) is 42°C/W for the 56-ball VBU package, requiring appropriate PCB copper pour and airflow in sealed enclosures.

Does S29GL256S11TFV010 support byte-level writes?

No. The device only supports word-level (16-bit) writes and requires programming in multiples of the 512-byte buffer size. Single-word programming is possible but not byte-addressable; DQ0–DQ7 and DQ8–DQ15 must be written together as a 16-bit word.

How is the OTP array protected from accidental overwrite?

The 1024-byte OTP array has two independently lockable regions. Once locked via dedicated CFI commands (0x60 → 0xD0), the lock becomes permanent and irreversible-even after power cycle or reset. Lock status is readable via CFI query, and attempts to program locked regions return status error.

Can S29GL256S11TFV010 be used with a 1.8 V I/O interface?

Yes. With VIO supplied at 1.8 V (within 1.65–3.6 V range) and VCC at 3.0 V, the device fully supports 1.8 V logic signaling on DQ0–DQ15, CE#, OE#, WE#, and RY/BY#. All timing parameters remain valid per datasheet Table 2–3 under VersatileIO conditions.