Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S29GL512S11DHIV10

Name: S29GL512S11DHIV10
Brand: Infineon Technologies
SKU: S29GL512S11DHIV10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: S29GL512S11DHIV10

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 64-LBGA

Datasheet:: S29GL512S11DHIV10.pdf

Description:: IC FLASH 512MBIT PARALLEL 64FBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,227

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

S29GL512S11DHIV10 from Infineon is a 512 Mb (64 MB), 3.0 V core, parallel-interface MIRRORBIT™ Eclipse flash memory with ×16 data bus, 100 ns random access time, 15 ns page access time, and industrial temperature grade (–40°C to +85°C), used for embedded code storage and firmware boot in microcontroller-based systems requiring XIP capability and high-density non-volatile storage.

For engineers reviewing the S29GL512S11DHIV10 datasheet, S29GL512S11DHIV10 pinout, S29GL512S11DHIV10 application, or S29GL512S11DHIV10 equivalent, this device supports asynchronous read, sector erase, buffer programming up to 512 bytes, hardware ECC, and versatile I/O (1.65 V to VCC) - critical for automotive infotainment, industrial HMI, and telecom baseband firmware storage.

Technical Context

The S29GL512S11DHIV10 implements an embedded algorithm controller (EAC) that executes autonomous program/erase operations without host CPU intervention. It uses 65 nm MIRRORBIT™ Eclipse technology with uniform 128-kbyte sectors and supports suspend/resume during both programming and erase cycles.

It features dual voltage domains: 3.0 V core (VCC = 2.7–3.6 V) and configurable I/O (VIO = 1.65 V to VCC), enabling interoperability with 1.8 V, 2.5 V, or 3.3 V logic interfaces. Internal hardware ECC provides single-bit error correction per 512-byte sector, verified via dedicated ECC status ASO register.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	512 Mb (64 MB), organized as 4,194,304 × 16-bit words - supports full firmware image storage for mid-tier MCUs.
Random access time	100 ns at full VCC = VIO - enables deterministic XIP execution latency in real-time embedded applications.
Page access time	15 ns - accelerates sequential instruction fetch within 32-byte aligned pages during burst reads.
Programming buffer	512 bytes (256 words) - reduces effective programming time by >3× vs. single-word writes in firmware update routines.
Erase endurance	100,000 program/erase cycles per sector - ensures field-upgrade reliability over 10+ years of industrial deployment.
Data retention	20 years at 85°C - meets long-lifecycle requirements for infrastructure and automotive control modules.
Operating temperature	–40°C to +85°C (Industrial grade) - qualified for uncontrolled ambient environments in factory automation and networking gear.

Pinout & Package

Package: 56-pin TSOP (Type I, standard thin small outline package, 14 mm × 20 mm, 0.5 mm pitch). Pin count and layout conform to JEDEC MO-141AC specification.

Pin/Terminal	Circuit Role	Design Meaning
A0–A24	Address inputs	25-bit address bus supporting full 512 Mb addressing (A24 = MSB); word-aligned only (no byte enable).
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; supports 1.65–3.6 V I/O voltage (VIO) independent of VCC.
CE#	Chip enable	Active-low chip select; controls device power state and enables internal timing for access initiation.
OE#	Output enable	Active-low read strobe; gates output drivers during asynchronous read; supports page-mode timing control.
WE#	Write enable	Active-low write strobe; initiates command latching, programming, or erase setup sequences.
RY/BY#	Ready/Busy indicator	Open-drain output signaling active embedded operation (low = busy); used for polling or interrupt-driven status monitoring.
WP#	Write protect	Hardware sector protection enable; when asserted, blocks program/erase commands to protected sectors.
VCC	Core supply	3.0 V nominal supply (2.7–3.6 V range); powers core logic, charge pumps, and ECC engine.
VIO	I/O supply	Independent I/O voltage rail (1.65–VCC); allows interfacing with mixed-voltage host systems without level shifters.

Key Features

Feature	Design Value
Asynchronous 32-byte page read	Enables 15 ns access to subsequent words within same page - cuts instruction fetch latency in XIP boot loaders.
Internal hardware ECC	Single-bit error correction per 512-byte sector with automatic detection and correction - eliminates need for external error-handling firmware.
Advanced sector protection (ASP)	Volatile and non-volatile lock bits per 128-kbyte sector - supports secure bootloader partitioning and field firmware rollback prevention.
1024-byte OTP array	Two lockable regions for immutable keys, calibration data, or device-specific identifiers - resistant to accidental overwrite or malicious reprogramming.
Common Flash Interface (CFI)	Standardized parameter table accessible via read commands - enables OS-agnostic flash driver auto-detection and configuration.

Applications

Automotive Instrument Cluster

Industrial PLC Firmware Storage

Use Scenario: Storing calibrated gauge graphics, vehicle configuration tables, and OTA update staging area in AEC-Q100 Grade 3 qualified systems.

IC Role / Device Role / Timing Role: Non-volatile XIP code and data storage with deterministic 100 ns read latency and sector-level write protection.

Use Value: Enables safe, atomic firmware updates while maintaining real-time display responsiveness during runtime.

Use Scenario: Holding ladder logic programs, I/O mapping tables, and safety-critical configuration parameters in programmable logic controllers deployed in factory environments.

IC Role / Device Role / Timing Role: High-reliability firmware archive with 100,000-cycle endurance and 20-year data retention at 85°C.

Use Value: Eliminates external EEPROM or backup battery for configuration persistence, reducing BOM cost and board space.

Telecom Baseband Processor Boot

Medical Imaging System Configuration

Use Scenario: Booting DSP firmware and loading RF calibration profiles in 4G/5G remote radio units operating under thermal cycling conditions.

IC Role / Device Role / Timing Role: Primary boot memory with fast page-mode read for rapid initialization and Versatile I/O compatibility with 1.8 V baseband SoCs.

Use Value: Reduces boot time by 35% vs. legacy NOR flash due to 15 ns page access and 512-byte buffer programming.

Use Scenario: Storing DICOM metadata templates, sensor calibration coefficients, and regulatory compliance flags in FDA-cleared diagnostic imaging equipment.

IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration store with OTP lockable regions and hardware ECC for audit-trail integrity.

Use Value: Meets IEC 62304 software lifecycle requirements by preventing unauthorized modification of safety-critical parameters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
S29GL512S10TFI010	Same density and architecture but in 64-ball LAE Fortified BGA (9 mm × 9 mm); no TSOP option; 90 ns random access (vs. 100 ns).	Preferred for space-constrained PCBs where footprint reduction outweighs TSOP's ease of prototyping and rework.	Select when board area is constrained and BGA assembly capability exists; not suitable for hand-soldered or socketed designs.
MX29GL512FHI-90G	Micron 512 Mb parallel NOR; 90 ns random access; no integrated ECC; requires external error management; supports CFI but lacks ASP granularity.	Lower-cost alternative where ECC is handled in software or external controller, and sector protection flexibility is secondary.	Choose for cost-sensitive industrial gateways where firmware integrity is enforced at system level, not device level.

Compared with S29GL512S11DHIV10, the TSOP-packaged Infineon part offers superior reliability through on-die ECC and finer-grained sector protection, while the Micron alternative trades those features for lower unit cost and marginally faster access - making it viable only where host-side error handling is already implemented.

Availability

S29GL512S11DHIV10 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, telecom baseband boot, and medical imaging configuration storage requiring stable component supply across multi-year production lifecycles.

Supply support for S29GL512S11DHIV10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and non-volatile memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

The GL-S family targets high-reliability embedded systems needing XIP-capable NOR flash with robust data integrity, extended temperature operation, and automotive qualification - bridging performance gaps between legacy parallel NOR and newer serial flash architectures.

FAQ

Does S29GL512S11DHIV10 support byte-level writes?

No. The device operates exclusively on 16-bit word boundaries. All write operations - including command latching, programming, and status register updates - require 16-bit data transfers. There is no provision for byte-enable signals or partial-word writes; attempting byte access results in undefined behavior or bus contention.

Can VIO be set to 1.8 V while VCC is at 3.3 V?

Yes. The Versatile I/O feature explicitly permits VIO = 1.8 V with VCC = 3.3 V (within 2.7–3.6 V range). This configuration is validated per datasheet Table 10.5 and enables direct interface with 1.8 V FPGAs or low-voltage microcontrollers without external level shifters.

Is the 1024-byte OTP array one-time programmable per bit or per region?

The OTP array consists of two independently lockable 512-byte regions. Each region can be programmed once per byte, and locking is permanent and irreversible. Once a region is locked, no further writes - including ECC correction or erase - are possible for that region, ensuring cryptographic key or calibration data immutability.

What happens during power loss mid-erase?

The device incorporates hardware power-loss protection: if VCC drops below the reset threshold during erase, the embedded algorithm controller halts the operation and preserves sector integrity. Upon power restoration, the sector remains in its pre-erase state - no partial erasure or bit corruption occurs, and no recovery sequence is required.

S29GL512S11DHIV10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: GL-S

Package/Case:: 64-LBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 512Mbit

Memory Organization:: 32M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 60ns

Access Time:: 110 ns

Voltage - Supply:: 1.65V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 64-FBGA (9x9)

S29GL512S11DHIV10 FAQ

1.How can I place an order for S29GL512S11DHIV10 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29GL512S11DHIV10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29GL512S11DHIV10 reliable?

The price and inventory of S29GL512S11DHIV10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512S11DHIV10 is usually 5 days.

3.What payment methods are accepted for S29GL512S11DHIV10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512S11DHIV10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29GL512S11DHIV10?

S29GL512S11DHIV10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29GL512S11DHIV10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29GL512S11DHIV10?

For technical support, including S29GL512S11DHIV10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512S11DHIV10 requirements.

6.How does Aetrix verify that S29GL512S11DHIV10 is sourced from the original manufacturer or authorized distributors?

All S29GL512S11DHIV10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512S11DHIV10 meets industry standards.

7.What is the process for return or replacement of S29GL512S11DHIV10?

All S29GL512S11DHIV10 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512S11DHIV10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29GL512S11DHIV10 part is unused and in its original packaging.

Return procedure for S29GL512S11DHIV10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…