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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S29GL512S11DHV013

Name: S29GL512S11DHV013
Brand: Infineon Technologies
SKU: S29GL512S11DHV013
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S29GL512S11DHV013

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 64-LBGA

Datasheet:: S29GL512S11DHV013.pdf

Description:: IC FLASH 512MBIT PARALLEL 64FBGA

Quantity:: RFQ Add To RFQ list

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Inventory:1,274

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Product details

Overview

S29GL512S11DHV013 from Infineon is a 512 Mb (64 MB) parallel NOR flash memory IC with 16-bit data bus, fabricated on 65 nm MIRRORBIT™ Eclipse process. It operates from a single 2.7–3.6 V supply, delivers 100 ns random access time and 15 ns page access time, and integrates hardware ECC for single-bit error correction-used in boot code storage and firmware update storage in industrial control systems.

For engineers reviewing the S29GL512S11DHV013 datasheet, S29GL512S11DHV013 pinout, S29GL512S11DHV013 application, or S29GL512S11DHV013 equivalent, key selection criteria include its 128 kB uniform sector erase granularity, 512-byte write buffer throughput (1.5 MBps), OTP array for secure configuration, and support for both industrial (–40°C to +85°C) and automotive AEC-Q100 grade 3 operating ranges.

Technical Context

This device implements an asynchronous parallel interface with CE#, OE#, and WE# control signals, supporting word-aligned (16-bit) read/write operations and 32-byte page-mode reads. Its embedded algorithm controller (EAC) manages program/erase sequences autonomously, including suspend/resume capability and status reporting via status register, data polling, or RY/BY# pin.

The flash array is organized into uniform 128 kB sectors, each individually erasable, and includes a dedicated 1024-byte one-time-programmable (OTP) array split into two lockable regions. Internal hardware ECC corrects single-bit errors on-the-fly during read operations without software intervention.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	512 Mb (64 MB), enabling full firmware image storage for mid-tier microcontrollers
Random access time	100 ns at VCC = VIO, meeting real-time boot latency requirements
Page access time	15 ns, accelerating sequential instruction fetch within same 32-byte page
Write buffer size	512 bytes, allowing burst programming at 1.5 MBps effective rate
Erase endurance	100,000 cycles per sector, supporting field firmware updates over product lifetime
Data retention	20 years at 85°C, ensuring long-term reliability in unpowered storage
Operating temperature	–40°C to +85°C (industrial grade), validated for factory automation environments
I/O voltage range	VIO = 1.65 V to VCC, enabling direct interfacing with 1.8 V or 3.3 V logic without level shifters

Pinout & Package

Package: 56-pin TSOP (Type I, 14 mm × 20 mm, 0.5 mm pitch), JEDEC standard compliant, suitable for wave-soldered industrial PCBs.

Pin/Terminal	Circuit Role	Design Meaning
A0–A24	Address inputs	25-bit address bus supporting full 512 Mb addressing (A24 = MSB)
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; supports byte/word writes and reads
CE#	Chip enable	Active-low chip select; device enters standby when high
OE#	Output enable	Active-low control for data output buffer; enables read data drive
WE#	Write enable	Active-low strobe for latching write data and command sequences
RY/BY#	Ready/busy indicator	Open-drain output signaling active program/erase operation (low = busy)
RESET#	Hardware reset	Active-low input forcing device into known state; resets internal state machine
VCC	Core power	2.7–3.6 V supply powering core logic and memory array
VIO	I/O power	1.65–3.6 V supply setting I/O buffer voltage level independently of VCC
WP#	Write protect	Hardware sector protection enable; low = disables program/erase in protected sectors

Key Features

Feature	Design Value
Hardware ECC	On-die single-bit error correction during read, eliminating need for external error-handling firmware
512-byte write buffer	Reduces average programming time by >70% vs. single-word writes, critical for OTA firmware updates
Uniform 128 kB sectors	Enables deterministic erase scheduling and wear leveling across full memory map
Suspend/resume capability	Allows interrupting long erase operations to service high-priority reads, improving system responsiveness
1024-byte OTP array	Stores immutable keys or calibration data; dual lockable regions prevent accidental overwrite

Applications

Industrial PLC Firmware Storage

Automotive ADAS Boot Memory

Use Scenario: Storing boot loader and real-time control firmware in programmable logic controllers with frequent field updates.

IC Role / Device Role / Timing Role: Non-volatile XIP-capable code storage with deterministic 100 ns read latency and sector-level update safety.

Use Value: Enables safe in-field firmware upgrades using 128 kB sector erase and hardware write protection, minimizing downtime.

Use Scenario: Holding boot code and safety-critical configuration for radar processing units in Level 2+ ADAS systems.

IC Role / Device Role / Timing Role: AEC-Q100 grade 3-compliant boot memory with 20-year data retention and ECC-protected reads.

Use Value: Guarantees reliable startup under thermal stress (–40°C to +85°C) and prevents silent corruption via on-die ECC.

Medical Imaging System BIOS

Telecom Base Station Configuration

Use Scenario: Storing diagnostic BIOS and calibration tables in portable ultrasound devices requiring regulatory traceability.

IC Role / Device Role / Timing Role: Secure firmware storage with OTP region for immutable serial numbers and calibration checksums.

Use Value: Meets IEC 62304 traceability requirements via locked OTP sectors and CFI-compliant identification.

Use Scenario: Holding FPGA configuration bitstreams and protocol stack parameters in 5G remote radio units.

IC Role / Device Role / Timing Role: High-reliability parallel flash with 1.5 MBps buffered programming for rapid field reconfiguration.

Use Value: Reduces maintenance window duration by enabling full bitstream reload in <100 ms using 512-byte buffer mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
S29GL512P11TFV013	Same density and timing, but uses 64-ball LAE Fortified BGA (9 mm × 9 mm) instead of TSOP	Better suited for space-constrained designs with automated SMT assembly	Select when board area is limited and reflow compatibility is required
MX29GL512FHT2I-90G	Macronix part with 90 ns random access (vs. 100 ns), no integrated ECC, requires external error handling	Lacks hardware ECC and OTP array; lower cost where reliability margins allow	Select for cost-sensitive industrial applications without safety certification requirements

Compared with S29GL512P11TFV013, the TSOP package offers easier manual rework and legacy socket compatibility; compared with MX29GL512FHT2I-90G, the Infineon part provides built-in ECC and OTP security-critical for certified medical and automotive use cases.

Availability

S29GL512S11DHV013 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended product lifecycles.

Supply support for S29GL512S11DHV013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and non-volatile memory solutions for mission-critical applications.

The GL-S family targets embedded systems needing robust, high-density parallel NOR flash with XIP capability, ECC, and automotive-grade reliability-designed specifically for boot code, firmware, and secure configuration storage.

FAQ

Does S29GL512S11DHV013 support execute-in-place (XIP) operation?

Yes. The device supports true XIP operation with 100 ns random access time and 15 ns page-mode reads, enabling CPU instruction fetch directly from flash without copying to RAM. Its architecture allows full 16-bit word-aligned addressing and asynchronous read timing compatible with ARM Cortex-M and Power Architecture processors.

What is the function of the VIO pin, and can it be tied to VCC?

VIO sets the I/O buffer voltage level independently of VCC, supporting 1.65–3.6 V operation. It may be tied to VCC for 3.3 V logic interfaces, or to 1.8 V for mixed-voltage systems. Doing so configures the DQ pins and control inputs (CE#, OE#, WE#) to match the selected VIO level, eliminating external level shifters in heterogeneous designs.

How does the 512-byte write buffer improve programming efficiency?

The buffer allows up to 512 bytes to be loaded before initiating a single embedded program operation, achieving 1.5 MBps effective throughput. This reduces total programming time by eliminating per-word command overhead and bus turnaround delays-especially beneficial for firmware image updates where contiguous blocks are written sequentially.

Is the OTP array truly one-time programmable, and how is it secured?

Yes-the 1024-byte OTP array is physically fused after programming and cannot be erased. It is divided into two independently lockable regions (512 bytes each); once locked via dedicated CFI commands, further writes to that region are blocked permanently. This ensures secure storage of cryptographic keys or calibration constants without risk of overwrite during field servicing.

S29GL512S11DHV013 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: GL-S

Package/Case:: 64-LBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 512Mbit

Memory Organization:: 32M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 60ns

Access Time:: 110 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 105°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 64-FBGA (9x9)

S29GL512S11DHV013 FAQ

1.How can I place an order for S29GL512S11DHV013 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29GL512S11DHV013 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29GL512S11DHV013 reliable?

The price and inventory of S29GL512S11DHV013 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512S11DHV013 is usually 5 days.

3.What payment methods are accepted for S29GL512S11DHV013?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512S11DHV013 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29GL512S11DHV013?

S29GL512S11DHV013 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29GL512S11DHV013 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29GL512S11DHV013?

For technical support, including S29GL512S11DHV013 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512S11DHV013 requirements.

6.How does Aetrix verify that S29GL512S11DHV013 is sourced from the original manufacturer or authorized distributors?

All S29GL512S11DHV013 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512S11DHV013 meets industry standards.

7.What is the process for return or replacement of S29GL512S11DHV013?

All S29GL512S11DHV013 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512S11DHV013, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29GL512S11DHV013 part is unused and in its original packaging.

Return procedure for S29GL512S11DHV013:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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