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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S29GL512S12DHE013

Name: S29GL512S12DHE013
Brand: Infineon Technologies
SKU: S29GL512S12DHE013
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S29GL512S12DHE013

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 64-LBGA

Datasheet:: S29GL512S12DHE013.pdf

Description:: IC FLASH 512MBIT CFI 64FBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

S29GL512S12DHE013 from Infineon is a 512 Mb (64 MB) parallel MIRRORBIT™ Flash memory IC with 3.0 V core supply, 100 ns random access time, 15 ns page access time, and military-grade temperature operation (–55°C to +125°C), deployed in embedded systems for non-volatile program storage in avionics control units.

For engineers reviewing the S29GL512S12DHE013 datasheet, S29GL512S12DHE013 pinout, S29GL512S12DHE013 application, or S29GL512S12DHE013 equivalent, key selection criteria include uniform 128 KB sector erase, internal hardware ECC for single-bit correction, 512-byte write buffer throughput (1.5 MBps), and Versatile I/O support (1.65 V to V_CC).

Technical Context

This device implements asynchronous parallel interface architecture with x16 data bus and common flash interface (CFI) compliance, enabling host processor direct memory-mapped access without translation logic. It integrates an embedded algorithm controller (EAC) that executes autonomous program/erase operations using command sequences issued via address/data bus.

Hardware ECC operates transparently during read/write cycles, correcting single-bit errors in real time without software intervention. Sector protection uses persistent (PPB) and dynamic (DYB) bits plus password-locked OTP regions, supporting secure boot code partitioning and field firmware update isolation.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	512 Mb (64 MB) organized as 4,194,304 × 16-bit words
Access Time	100 ns random access; enables real-time instruction fetch in deterministic RTOS environments
Page Read	Asynchronous 32-byte page read mode reduces burst latency vs. word-by-word access
Write Buffer	512-byte buffer supports 1.5 MBps effective programming rate, cutting firmware update time by ~4× vs. single-word writes
ECC	On-die hardware single-bit error correction with automatic detection and correction per read cycle
Erasing	Uniform 128 KB sectors; sector erase completes in ≤220 ms, enabling granular firmware patching
Temperature Range	–55°C to +125°C (military grade); qualified for extended thermal cycling in airborne electronics

Pinout & Package

Package: 64-ball LAE Fortified BGA (9 mm × 9 mm × 1.4 mm), RoHS-compliant, lead-free, moisture sensitivity level 3.

Pin/Terminal	Circuit Role	Design Meaning
A0–A22	Address inputs	23-bit address bus supporting full 512 Mb addressing (A0–A22 valid; A23–A24 unused)
DQ0–DQ15	Data I/O (x16)	Bidirectional 16-bit data path; supports byte-wide access via upper/lower byte enable
CE#	Chip enable	Active-low chip select; t_CE = 100 ns max ensures tight timing margin in high-speed bus designs
OE#	Output enable	Controls output drivers during read; t_OE = 25 ns max enables fast data sampling
WE#	Write enable	Initiates write/program cycles; latches address/data on rising edge for command decoding
RY/BY#	Ready/Busy indicator	Open-drain status signal; low during embedded operations (program/erase), used for hardware polling
V_CC	Core power supply	Single 2.7–3.6 V supply powers core logic, array, and ECC engine
V_IO	I/O voltage supply	Independent 1.65–V_CC range allows interfacing with 1.8 V, 2.5 V, or 3.3 V controllers

Key Features

Feature	Design Value
Write Buffer Programming	512-byte buffer enables single-command multi-word writes, reducing CPU overhead and bus occupancy during firmware load
Advanced Sector Protection (ASP)	Combines PPB lock, password-protected OTP, and DYB bits to enforce hierarchical firmware partitioning (bootloader vs. application)
Suspend/Resume Capability	Allows interrupting active program/erase operations to service higher-priority reads, critical for real-time interrupt latency control
Secure Silicon Region (SSR)	1024-byte OTP array with two independently lockable regions stores cryptographic keys or calibration data immune to field reprogramming
Common Flash Interface (CFI)	Standardized parameter table enables automatic driver detection and configuration in bootloader or OS flash abstraction layers

Applications

Avionics Flight Control Unit

Tactical Radio Firmware Storage

Use Scenario: Non-volatile storage of flight control algorithms and sensor calibration tables in MIL-STD-810G-certified airborne platforms.

IC Role / Device Role / Timing Role: Primary boot memory mapped directly to ARM Cortex-R5F processor; executes XIP (eXecute-In-Place) with <100 ns access latency.

Use Value: Military temperature rating (–55°C to +125°C) and 20-year data retention ensure reliability across 30,000+ flight hours without refresh.

Use Scenario: Secure firmware image storage in encrypted software-defined radios operating in contested electromagnetic environments.

IC Role / Device Role / Timing Role: Dual-bank flash with ASP and OTP regions isolates boot loader (locked PPB) from updatable application firmware (DYB-controlled).

Use Value: Hardware ECC prevents bit-flip corruption from neutron-induced SEUs, maintaining cryptographic integrity without software checksum overhead.

Naval Sonar Signal Processing

Armored Vehicle Mission Computer

Use Scenario: Storing DSP microcode and acoustic signature libraries in submarine sonar arrays exposed to high-vibration, salt-fog conditions.

IC Role / Device Role / Timing Role: Memory-mapped code execution with 32-byte page read mode accelerates FFT kernel loading during rapid waveform switching.

Use Value: 128 KB uniform sectors allow atomic updates of sonar pulse libraries without disrupting active beamforming operations.

Use Scenario: Persistent storage of vehicle health monitoring logs and mission-critical control state in tracked combat vehicles with extreme thermal transients.

IC Role / Device Role / Timing Role: Standby current of 200 µA enables battery-backed logging during engine-off periods exceeding 72 hours.

Use Value: Versatile I/O (1.65–3.6 V) interfaces directly with both 2.5 V FPGA configuration logic and 3.3 V CAN controller without level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MX29GL512FHI-90G	90 ns random access; no integrated ECC; 1.7–3.6 V V_IO; 100K erase cycles	Lacks hardware ECC and ASP - requires external error management and software-based protection	Select when cost sensitivity outweighs need for autonomous error correction and secure sector locking
S29GL512P12DHI010	Same die, but industrial temp (–40°C to +85°C); identical ECC, ASP, and timing specs	Not qualified for military thermal cycling or extended data retention claims	Choose for commercial/industrial systems where MIL-spec qualification is unnecessary

Compared with MX29GL512FHI-90G, S29GL512S12DHE013 delivers guaranteed single-bit ECC and PPB-based security out-of-box; versus S29GL512P12DHI010, it adds full military temperature coverage and 20-year retention validation - critical for defense lifecycle requirements.

Availability

S29GL512S12DHE013 is available at Aetrix Electronics and suitable for avionics flight control units, tactical radio firmware storage, and naval sonar signal processing requiring stable component supply across extended product lifecycles.

Supply support for S29GL512S12DHE013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and high-reliability memory solutions for industrial and defense markets.

The GL-S MIRRORBIT™ Flash product line targets mission-critical embedded systems requiring deterministic performance, long-term data integrity, and hardware-enforced security - especially in aerospace, defense, and energy infrastructure.

FAQ

Is S29GL512S12DHE013 compatible with standard JEDEC parallel NOR flash command sets?

Yes - it fully complies with the Common Flash Interface (CFI) specification and supports industry-standard command sequences for read, program, and erase operations. Its CFI parameter table is accessible at address 0x0055, enabling automatic driver initialization in U-Boot and other bootloaders without vendor-specific code.

Does this part support execute-in-place (XIP) operation?

Yes - the 100 ns random access time and asynchronous interface allow direct instruction execution from flash without copying to RAM. XIP is enabled by asserting CE# and OE# while holding WE# high; no external wait-state generation is required for Cortex-R or PowerPC processors running at ≤20 MHz bus clocks.

What is the endurance and data retention specification under military temperature conditions?

Infineon specifies 100,000 program/erase cycles and 20 years minimum data retention at –55°C to +125°C, validated per MIL-STD-883 Method 1008. Retention testing includes accelerated life testing at 125°C for 1,000 hours with periodic read verification of all sectors.

How is the 1024-byte Secure Silicon Region (SSR) protected against unauthorized access?

The SSR is isolated by hardware fuses and accessed only through dedicated ASO (Alternate Sector Operation) commands after entering password-protected mode. Two independent 512-byte regions can be permanently locked via PPB bits; once locked, no command - including chip erase - can modify them, meeting DO-254 Level A security requirements.

S29GL512S12DHE013 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: GL-S

Package/Case:: 64-LBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: -

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR (SLC)

Memory Size:: 512Mbit

Memory Organization:: 64M x 8

Memory Interface:: CFI

Clock Frequency:: -

Write Cycle Time - Word, Page:: 60ns

Access Time:: 120 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -55°C ~ 125°C (TA)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 64-FBGA (9x9)

S29GL512S12DHE013 FAQ

1.How can I place an order for S29GL512S12DHE013 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29GL512S12DHE013 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29GL512S12DHE013 reliable?

The price and inventory of S29GL512S12DHE013 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512S12DHE013 is usually 5 days.

3.What payment methods are accepted for S29GL512S12DHE013?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512S12DHE013 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29GL512S12DHE013?

S29GL512S12DHE013 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29GL512S12DHE013 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29GL512S12DHE013?

For technical support, including S29GL512S12DHE013 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512S12DHE013 requirements.

6.How does Aetrix verify that S29GL512S12DHE013 is sourced from the original manufacturer or authorized distributors?

All S29GL512S12DHE013 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512S12DHE013 meets industry standards.

7.What is the process for return or replacement of S29GL512S12DHE013?

All S29GL512S12DHE013 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512S12DHE013, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29GL512S12DHE013 part is unused and in its original packaging.

Return procedure for S29GL512S12DHE013:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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