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Infineon Technologies S29GL512T11DHAV23
- Part No.:
- S29GL512T11DHAV23
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S29GL512T11DHAV23.pdf
- Description:
- IC FLASH 512MBIT CFI 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,135
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Product details
Overview
S29GL512T11DHAV23 from Infineon is a 512 Mb (64 MB) parallel NOR flash memory IC using 45-nm MIRRORBIT™ technology, operating from 2.7 V to 3.6 V with 100 ns random access time and 15 ns page access time. It features a 512-byte write buffer, hardware ECC for single-bit correction, uniform 128-KB sector erase, and supports industrial temperature range (–40°C to +85°C). It is used in boot code storage for industrial controllers requiring fast XIP execution and reliable non-volatile data retention.
For engineers reviewing the S29GL512T11DHAV23 datasheet, S29GL512T11DHAV23 pinout, S29GL512T11DHAV23 application, or S29GL512T11DHAV23 equivalent, key selection criteria include verified 100,000 program/erase cycles, CFI-compliant interface compatibility, OTP array support for secure configuration storage, and TSOP-56 package mechanical fit in legacy embedded designs.
Technical Context
This device implements an asynchronous parallel interface with ×8/×16 data bus flexibility and versatile I/O (VIO = 1.65 V to VCC), enabling direct connection to multiple microcontroller families without level-shifting. Its embedded algorithm controller (EAC) manages all program/erase operations-including suspend/resume-and integrates automatic ECC generation and checking during read/write cycles.
The memory array is organized into uniform 128-KB sectors with advanced sector protection (ASP), supporting both volatile and non-volatile locking per sector. A dedicated 2048-byte one-time programmable (OTP) array includes four lockable regions (SSR0–SSR3), where SSR0 is factory-locked and SSR3 supports password-based read protection for secure firmware keys.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mb (64 MB) - sufficient for full boot image + firmware + parameter storage in mid-tier industrial MCUs |
| Access Time (tACC) | 100 ns at –40°C to +85°C - enables direct XIP execution from flash without cache penalty in real-time control loops |
| Page Access Time (tPACC) | 15 ns - accelerates sequential instruction fetch during burst reads |
| Write Buffer Size | 512 bytes - reduces effective programming time by batching up to 256 words per command |
| ECC Support | Internal hardware single-bit error correction - eliminates need for external ECC logic in safety-critical boot paths |
| Endurance & Retention | 100,000 program/erase cycles / 20-year data retention - meets long-lifecycle requirements for unattended infrastructure equipment |
| Operating Voltage | VCC = 2.7 V to 3.6 V, VIO = 1.65 V to VCC - allows interoperability with 1.8 V, 2.5 V, and 3.3 V host interfaces |
| Temperature Grade | Industrial (–40°C to +85°C) - qualified for deployment in factory automation PLCs and motor drives |
Pinout & Package
Package: 56-pin Thin Small Outline Package (TSOP), 14 mm × 20 mm, standard JEDEC MO-141AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 512 Mb addressing (byte/word boundary aligned) |
| DQ0–DQ15 | Data I/O (×16 mode) | Bidirectional data bus configurable for ×8 or ×16 operation; VIO-referenced I/O voltage tolerance |
| CE# | Chip Enable | Active-low enable controlling device selection; tCE = 100 ns max determines minimum chip select assertion window |
| OE# | Output Enable | Active-low control for data output drivers; tOE = 25 ns max defines read data hold timing margin |
| WE# | Write Enable | Active-low signal initiating internal program/erase algorithms via command register sequence |
| RY/BY# | Ready/Busy Output | Open-drain status indicator: low = operation in progress, high = ready for next command |
| RESET# | Hardware Reset | Active-low input forcing device into reset state; used for power-on initialization and error recovery |
Key Features
| Feature | Design Value |
|---|---|
| 45-nm MIRRORBIT™ Technology | Enables higher density and lower power vs. older floating-gate NOR, with proven reliability in automotive and industrial deployments |
| Asynchronous 32-byte Page Read | Improves instruction fetch throughput over standard byte reads without requiring synchronous clocking infrastructure |
| Common Flash Interface (CFI) | Provides standardized JEDEC JESD68 query table for automatic driver detection and configuration in bootloader software |
| Advanced Sector Protection (ASP) | Allows independent volatile/non-volatile locking of any 128-KB sector - critical for protecting bootloader while permitting application updates |
| OTP Array with Password Protection | Four SSR regions enable secure storage of cryptographic keys or calibration data; SSR3 read-protection prevents unauthorized extraction |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing boot code and real-time control firmware in programmable logic controllers deployed in manufacturing lines. IC Role / Device Role / Timing Role: Primary non-volatile boot memory providing XIP-capable instruction fetch with deterministic 100 ns latency. Use Value: Eliminates need for external SRAM shadowing; 100,000-cycle endurance ensures field-upgrade capability over 10+ years of operation. | Use Scenario: Holding certified boot loader and sensor fusion firmware in camera-based ADAS ECUs operating at ambient temperatures up to +85°C. IC Role / Device Role / Timing Role: Secure, AEC-Q100 grade 3 compliant boot memory with hardware ECC to meet ISO 26262 ASIL-B requirements. Use Value: Internal ECC corrects bit flips induced by radiation or aging, avoiding system-level fault injection during cold start sequences. |
| Medical Imaging System Configuration | Telecom Base Station BIOS |
Use Scenario: Storing calibration tables, device-specific parameters, and regulatory compliance data in portable ultrasound machines. IC Role / Device Role / Timing Role: Non-volatile parameter store with OTP-secured calibration keys and sector-locked configuration regions. Use Value: SSR3 password protection prevents tampering with FDA-cleared calibration values; 20-year data retention ensures archival integrity. | Use Scenario: Hosting BIOS and FPGA configuration bitstreams in carrier-grade 5G base station radios requiring zero-downtime field upgrades. IC Role / Device Role / Timing Role: Dual-role flash: boot ROM + field-upgradable firmware partition with suspend/resume during partial reprogramming. Use Value: 512-byte write buffer enables sub-second firmware patching; sector erase isolation prevents corruption of active runtime partitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL512S11DHIV23 | Same density and pinout, but rated for Industrial Plus (–40°C to +105°C); slightly higher tACC (110 ns) | Required for extended-temperature industrial drives or under-hood automotive modules | Select when ambient operating temperature exceeds +85°C; otherwise identical software/hardware integration |
| MX29GL512FHI-11G | Macronix equivalent; same 512 Mb, TSOP-56, 100 ns tACC; no OTP array or SSR protection | Lacks secure key storage; suitable only for non-security-sensitive firmware storage | Choose for cost-sensitive applications where OTP and sector-level password protection are unnecessary |
Compared with S29GL512S11DHIV23, this part trades extended temperature rating for tighter timing; versus MX29GL512FHI-11G, it adds hardware security features essential for certified boot environments but at higher unit cost and design complexity.
Availability
S29GL512T11DHAV23 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical imaging calibration retention, telecom base station BIOS hosting, and automotive ADAS boot memory requiring stable component supply across multi-year production programs.
Supply support for S29GL512T11DHAV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and secure microcontrollers, with global R&D and manufacturing infrastructure.
The GL-T family targets high-reliability embedded systems needing robust, pin-compatible NOR flash for boot code and firmware-designed specifically for XIP-capable microcontrollers in industrial, automotive, and medical applications.
FAQ
Is S29GL512T11DHAV23 compatible with legacy S29GL512P devices?
No. While both are 512 Mb parallel NOR flashes, S29GL512T uses 45-nm MIRRORBIT™ technology and requires updated command sequences for program/erase. The T-series introduces new status register bits, CFI revision, and OTP functionality absent in P-series. Hardware pinout is identical, but firmware must be revalidated.
Does this device support synchronous read mode?
No. S29GL512T11DHAV23 operates exclusively in asynchronous mode. It lacks a clock input and does not support burst reads or synchronous timing protocols. All read operations are controlled by CE#, OE#, and address setup/hold timing per JEDEC-standard parallel NOR specifications.
Can the OTP array be reprogrammed after initial programming?
No. The 2048-byte OTP array is physically one-time programmable. Once a bit is set to '0', it cannot be changed back to '1'. SSR0 is factory-locked and immutable; SSR1–SSR3 can be locked individually via command, but their contents cannot be altered after programming. This ensures permanent, tamper-resistant storage of keys or identifiers.
What is the purpose of the Versatile I/O (VIO) feature?
VIO allows independent voltage scaling of the I/O pins (1.65 V to VCC) while maintaining core logic at VCC (2.7 V to 3.6 V). This enables direct interfacing with 1.8 V or 2.5 V microcontrollers without external level shifters, reducing BOM count and PCB routing complexity in mixed-voltage embedded systems.
S29GL512T11DHAV23 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR (SLC)
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- CFI
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 110 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (9x9)
S29GL512T11DHAV23 FAQ
1.How can I place an order for S29GL512T11DHAV23 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL512T11DHAV23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL512T11DHAV23 reliable?
The price and inventory of S29GL512T11DHAV23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512T11DHAV23 is usually 5 days.
3.What payment methods are accepted for S29GL512T11DHAV23?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512T11DHAV23 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL512T11DHAV23?
S29GL512T11DHAV23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL512T11DHAV23 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL512T11DHAV23?
For technical support, including S29GL512T11DHAV23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512T11DHAV23 requirements.
6.How does Aetrix verify that S29GL512T11DHAV23 is sourced from the original manufacturer or authorized distributors?
All S29GL512T11DHAV23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512T11DHAV23 meets industry standards.
7.What is the process for return or replacement of S29GL512T11DHAV23?
All S29GL512T11DHAV23 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512T11DHAV23, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL512T11DHAV23 part is unused and in its original packaging.
Return procedure for S29GL512T11DHAV23:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL512T11DHAV23 Tags
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